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Muhammad Shaffatul Islam
Muhammad Shaffatul Islam
在 g.rit.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Performance Analysis of the Routing Protocols for Video Streaming Over Mobile Ad Hoc Networks
MSIMA Riaz, M Tarique
612012
Performance Analysis of WiMax/WiFi System under Different Codecs
S Islam, M Rashid, M Tarique
International Journal of Computer Applications 18 (6), 13-19, 2011
312011
Tunable Photocatalytic Properties of Planar GaN/GeC Hetero-Bilayer: Production of H₂ Fuel
MSH Khan, MR Islam, MS Islam, IM Mehedi, MT Hasan
IEEE Access 8, 209030-209042, 2020
192020
Impact of channel thickness on the performance of GaAs and GaSb DG-JLMOSFETs: an atomistic tight binding based evaluation
MS Islam, MS Hasan, MR Islam, A Iskanderani, IM Mehedi, MT Hasan
IEEE Access 9, 117649-117659, 2021
162021
Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET
MNK Alam, MS Islam, MG Kibria, MR Islam
IEEE Transactions on Electron Devices, 2014
152014
Study of two-dimensional Janus WXY (X≠ Y= S, Se, and Te) trilayer homostructures for photovoltaic applications using DFT screening of different stacking patterns
K Kubra, MR Islam, MS Hasan Khan, MS Islam, MT Hasan
ACS omega 7 (15), 12947-12955, 2022
92022
Potential Visible-Light Driven PtO₂/GaN vdW Hetero-Bilayer Photocatalysts for Water Splitting Using First-Principles
MSH Khan, MS Islam, MR Islam, A Iskanderani, IM Mehedi, MT Hasan
IEEE Access 9, 109510-109521, 2021
92021
Performance analysis of routing protocols of mobile ad hoc networks for VoIP applications
MT M. S. Islam, A. Riaz
Journal of Selected Areas in Telecommunications (JSAT), 2012
9*2012
Performance evaluation of various vocoders in Mobile Ad hoc Network (MANET)
MS Islam, MN Islam, MS Alam, MA Riaz, MT Hasan
International Conference on Electrical & Computer Engineering (ICECE 2010 …, 2010
82010
InxGa1-xSb n-channel MOSFET: effect of interface states on CV characteristics
MS Islam, MNK Alam, MR Islam
Int. J. of Nanotechnology 11 (1/2/3/4), 85-96, 2014
62014
The effects of interdot spacing and dot size on the performance of InGaAs/GaAs QDIBSC
SA Amin, MT Hasan, MS Islam
International Journal of Photoenergy 2017 (1), 9160381, 2017
52017
GaN-based Double Gate MOSFETs: Effect of gate length
MSI Safayet Ahmed, Md. Itikham Bin Taher, Md. Tanvir Hasan
Region 10 Conference (TENCON), 2016 IEEE, 2016
5*2016
Effect of symmetrical underlap length on device performance of a GaN-based double gate MOSFET
S Ahmed, MT Hasan, MS Islam
2016 5th International Conference on Informatics, Electronics and Vision (ICIEV), 2016
42016
On the Ballistic Performance of InGaSb XOI FET: Impact of Channel Thickness and Interface States
MNK Alam, MS Islam, MR Kibria, M.GIslam
Electron Devices, IEEE Transactions on, 2015
42015
InxGa1−xAs/GaAs-based intermediate band solar cell: Effects of quantum dots
MSI Sayeda Anilka Amin, Md. Tanvir Hasan
Region 10 Conference (TENCON), 2016 IEEE, 2016
3*2016
Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET
MS Islam, MNK Alam, MR Islam
2014 International Conference on Informatics, Electronics & Vision (ICIEV), 1-4, 2014
32014
Powering disturb-free reconfigurable computing and tunable analog electronics with dual-port ferroelectric FET
Z Zhao, S Deng, S Chatterjee, Z Jiang, MS Islam, Y Xiao, Y Xu, ...
ACS Applied Materials & Interfaces 15 (47), 54602-54610, 2023
22023
Self-consistent quasi-static C-V characteristics of In1−xGaxSb XOI FET
MNK Alam, MS Islam, MR Islam
2013 IEEE International Conference of Electron Devices and Solid-state …, 2013
22013
Self-consistent quasi static CV characterization of InxGa1−xSb buried channel n-MOSFET
MS Islam, MNK Alam, MR Islam
2013 IEEE 5th International Nanoelectronics Conference (INEC), 94-96, 2013
22013
Ballistic performance comparison of InGaSb and InAsSb XOI nFET
MNK Alam, MS Islam, MR Islam
8th International Conference on Electrical and Computer Engineering, 659-662, 2014
12014
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