| Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot L Bouzaïene, RB Mahrsia, M Baira, L Sfaxi, H Maaref Journal of luminescence 135, 271-275, 2013 | 57 | 2013 |
| Investigation of the InAs/GaAs quantum dots’ size: dependence on the strain reducing layer’s position M Souaf, M Baira, O Nasr, MH Hadj Alouane, H Maaref, L Sfaxi, B Ilahi Materials 8 (8), 4699-4709, 2015 | 38 | 2015 |
| Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0. 22Ga0. 78N/GaN heterostructures I Jabbari, M Baira, H Maaref, R Mghaieth Solid State Communications 314, 113920, 2020 | 27 | 2020 |
| Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors I Saidi, H Mejri, M Baira, H Maaref Superlattices and Microstructures 84, 113-125, 2015 | 23 | 2015 |
| Linear and nonlinear intersubband optical properties of direct band gap GeSn quantum dots M Baira, B Salem, NA Madhar, B Ilahi Nanomaterials 9 (1), 124, 2019 | 19 | 2019 |
| Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure H Khmissi, M Baira, L Sfaxi, L Bouzaïene, F Saidi, C Bru-Chevallier, ... Journal of Applied Physics 109 (5), 2011 | 15 | 2011 |
| Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots L Bouzaïene, L Sfaxi, M Baira, H Maaref, C Bru-Chevallier Journal of Nanoparticle Research 13 (1), 257-262, 2011 | 15 | 2011 |
| Schottky barrier inhomogeneity in (Pd/Au) Al0. 22 Ga0. 78N/GaN/SiC HEMT: Triple Gaussian distributions I Jabbari, M Baira, H Maaref, R Mghaieth Chinese Journal of Physics 73, 719-731, 2021 | 14 | 2021 |
| Toward long wavelength low density InAs/GaAs quantum dots B Ilahi, L Sfaxi, E Tranvouez, G Brémond, M Baïra, C Bru-Chevalier, ... Physics Letters A 357 (4-5), 360-363, 2006 | 13 | 2006 |
| Design of strain-engineered GeSn/GeSiSn quantum dots for mid-IR direct bandgap emission on Si substrate R Al-Saigh, M Baira, B Salem, B Ilahi Nanoscale Research Letters 13, 1-5, 2018 | 12 | 2018 |
| C-DLTS interface defects in Al0. 22Ga0. 78N/GaN HEMTs on SiC: Spatial location of E2 traps I Jabbari, M Baira, H Maaref, R Mghaieth Physica E: Low-dimensional Systems and Nanostructures 104, 216-222, 2018 | 12 | 2018 |
| Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots M Baira, L Bouzaïene, L Sfaxi, H Maaref, O Marty, C Bru-Chevallier Journal of Applied Physics 105 (9), 2009 | 12 | 2009 |
| Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule M Baira, L Sfaxi, L Bouzaiene, H Maaref, N Chauvin, C Bru-Chevallier Journal of Applied Physics 104 (6), 2008 | 12 | 2008 |
| Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement I Jabbari, M Baira, H Maaref Applied Physics A 126, 1-11, 2020 | 11 | 2020 |
| Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices M Baira, B Salem, NA Madhar, B Ilahi Superlattices and Microstructures 117, 31-35, 2018 | 11 | 2018 |
| Evolution of InAs/GaAs QDs size with the growth rate: a numerical investigation B Ilahi, M Souaf, M Baira, J Alrashdi, L Sfaxi, A Alhazaa, H Maaref Journal of Nanomaterials 2015 (1), 847018, 2015 | 11 | 2015 |
| Intersubband optical nonlinearity of GeSn quantum dots under vertical electric field M Baira, B Salem, N Ahamad Madhar, B Ilahi Micromachines 10 (4), 243, 2019 | 9 | 2019 |
| Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate M Baira, M Aljaghwani, B Salem, NA Madhar, B Ilahi Results in Physics 12, 1732-1736, 2019 | 7 | 2019 |
| Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model S Ilahi, M Baira, F Saidi, N Yacoubi, L Auvray, H Maaref Journal of alloys and compounds 581, 358-362, 2013 | 7 | 2013 |
| Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP (0 0 1) R Ajjel, M Baira, H Maaref, B Salem, G Bremond, M Gendry Semiconductor science and technology 20 (6), 514, 2005 | 7 | 2005 |
Bouraoui IlahiUniversité de Sherbrooke在 usherbrooke.ca 的电子邮件经过验证
