| Demonstration of 1 V Reliable FeRAM Operation: Vc Engineering Using Quasi-Chirality of Hf1–xZrxO2 in a Nanolaminate Structure H Jang, A Kashir, T Schenk, M Habibi, M Schuster, S Oh, S Müeller, ... ACS applied materials & interfaces 16 (41), 55627-55636, 2024 | 2 | 2024 |
| Variability and Reliability Study of Nano-scale Hf0.5Zr0.5O2 Ferroelectric Devices Using O3 Treatment H Jang, A Kashir, S Oh, K Lee, L Jung, M Habibi, T Schenk, H Hwang IEEE Electron Device Letters, 2024 | 1 | 2024 |
| Understanding the Abnormal Capacitance of Ferroelectric HZO near Morphotropic Phase Boundary: Excellent candidate for DRAM and Capacitive Memory Array with Non-destructive Read … M Habibi, A Kashir, S Oh, H Jang, H Hwang The 32nd Korean Conference on Semiconductors (KCS), 2024 | | 2024 |
| Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design M Habibi, A Kashir, S Oh, H Jang, H Hwang Advanced Electronic Materials, 2400764, 2024 | | 2024 |
| Reliable HZO (0.5) Based Ferroelectric Memory with Ultra-low Operation Voltage of 1.1 V by Synergy Effect of Thickness Scaling and Microwave Annealing M Habibi, H Jang, PA Masouleh, K Lee, S Oh, H Hwang The 31st Korean Conference of Semiconductors (KCS), 2023 | | 2023 |
| Exploring the Morphotropic Phase Boundary in HfO2‐Based Ferroelectrics for Advanced High‐k Dielectrics S Oh, H Jang, M Habibi, M Sung, H Choi, S Kim, H Hwang Advanced Materials Technologies, 2401041, 0 | | |
| 1.0 V FeRAM Operation Using Nanolaminate Hf1− xZrxO2 Film and Prospects for High-density Memory A Kashir, H Jang, T Schenk, M Habibi, M Schuster, S Oh, X Wang, ... Dresden–Germany, 73, 0 | | |
Seungyeol OhPOSTECH在 postech.ac.kr 的电子邮件经过验证
