| Nucleation of ``Hut'' Pits and Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) in In Situ Scanning Tunnelng Microscopy I Goldfarb, PT Hayden, JHG Owen, GAD Briggs Physical review letters 78 (20), 3959, 1997 | 142 | 1997 |
| Bismuth-induced structures on Si (001) surfaces K Miki, JHG Owen, DR Bowler, GAD Briggs, K Sakamoto Surface science 421 (3), 397-418, 1999 | 131 | 1999 |
| Stress relief as the driving force for self-assembled Bi nanolines JHG Owen, K Miki, H Koh, HW Yeom, DR Bowler Physical review letters 88 (22), 226104, 2002 | 129 | 2002 |
| Atomically perfect bismuth lines on Si (001) K Miki, DR Bowler, JHG Owen, GAD Briggs, K Sakamoto Physical Review B 59 (23), 14868, 1999 | 122 | 1999 |
| Self-assembled nanowires on semiconductor surfaces JHG Owen, K Miki, DR Bowler Journal of materials science 41, 4568-4603, 2006 | 120 | 2006 |
| Surface reconstructions for InAs (001) studied with density-functional theory and STM C Ratsch, W Barvosa-Carter, F Grosse, JHG Owen, JJ Zinck Physical Review B 62 (12), R7719, 2000 | 115 | 2000 |
| Competing growth mechanisms of Ge/Si (001) coherent clusters I Goldfarb, PT Hayden, JHG Owen, GAD Briggs Physical Review B 56 (16), 10459, 1997 | 105 | 1997 |
| Hydrogen diffusion on Si (001) JHG Owen, DR Bowler, CM Goringe, K Miki, GAD Briggs Physical Review B 54 (19), 14153, 1996 | 102 | 1996 |
| Controlling the atomic layer deposition of titanium dioxide on silicon: dependence on surface termination S McDonnell, RC Longo, O Seitz, JB Ballard, G Mordi, D Dick, JHG Owen, ... The Journal of Physical Chemistry C 117 (39), 20250-20259, 2013 | 76 | 2013 |
| Scanning tunneling microscopy study of benzene adsorption on KW Self, RI Pelzel, JHG Owen, C Yan, W Widdra, WH Weinberg Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (3 …, 1998 | 65 | 1998 |
| Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si (001)-(2× 1) surface RC Longo, S McDonnell, D Dick, RM Wallace, YJ Chabal, JHG Owen, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 59 | 2014 |
| Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si (001) I Goldfarb, JHG Owen, PT Hayden, DR Bowler, K Miki, GAD Briggs Surface science 394 (1-3), 105-118, 1997 | 51 | 1997 |
| Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen JHG Owen, K Miki, DR Bowler, CM Goringe, I Goldfarb, GAD Briggs Surface science 394 (1-3), 91-104, 1997 | 48 | 1997 |
| Identification of the Si (001) missing dimer defect structure by low bias voltage STM and LDA modelling JHG Owen, DR Bowler, CM Goringe, K Miki, GAD Briggs Surface science 341 (3), L1042-L1047, 1995 | 48 | 1995 |
| Interaction between electronic structure and strain in Bi nanolines on Si (0 0 1) JHG Owen, K Miki, DR Bowler Surface Science 527 (1-3), L177-L183, 2003 | 45 | 2003 |
| Multimode hydrogen depassivation lithography: A method for optimizing atomically precise write times JB Ballard, TW Sisson, JHG Owen, WR Owen, E Fuchs, J Alexander, ... Journal of Vacuum Science & Technology B 31 (6), 2013 | 44 | 2013 |
| Bi nanoline passivity to attack by radical hydrogen or oxygen JHG Owen, DR Bowler, K Miki Surface science 499 (1), L124-L128, 2002 | 44 | 2002 |
| Atomic scale structure of InAs (001)-(2× 4) steady-state surfaces determined by scanning tunneling microscopy and density functional theory W Barvosa-Carter, RS Ross, C Ratsch, F Grosse, JHG Owen, JJ Zinck Surface science 499 (1), L129-L134, 2002 | 41 | 2002 |
| Diffusion of paired hydrogen on Si (001) DR Bowler, JHG Owen, K Miki, GAD Briggs Physical Review B 57 (15), 8790, 1998 | 41 | 1998 |
| Gas-source growth of group IV semiconductors: I. Si (001) nucleation mechanisms JHG Owen, K Miki, DR Bowler, CM Goringe, I Goldfarb, GAD Briggs Surface science 394 (1-3), 79-90, 1997 | 41 | 1997 |
