| Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor C Yoon, S Moon, C Shin Nano Convergence 7, 1-7, 2020 | 24 | 2020 |
| Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor Y Choi, C Han, J Shin, S Moon, J Min, H Park, D Eom, J Lee, C Shin Sensors 22 (11), 4087, 2022 | 15 | 2022 |
| Understanding of polarization-induced threshold voltage shift in ferroelectric-gated field effect transistor for neuromorphic applications S Moon, J Shin, C Shin Electronics 9 (5), 704, 2020 | 12 | 2020 |
| Abruptly-switching MoS₂-channel atomic-threshold-switching field-effect transistor with AgTi/HfO₂-based threshold switching device S Jeong, S Han, HJ Lee, D Eom, G Youm, Y Choi, S Moon, K Ahn, J Oh, ... IEEE Access 9, 116953-116961, 2021 | 6 | 2021 |
| Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate Y Choi, J Shin, S Moon, C Shin Micromachines 11 (5), 525, 2020 | 5 | 2020 |
| Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor Y Choi, J Shin, S Moon, J Min, C Han, C Shin Nanotechnology 34 (18), 185203, 2023 | 3 | 2023 |
| Impact of Process-Induced Variations on negative capacitance junctionless nanowire FET Y Choi, J Lee, J Lim, S Moon, C Shin Electronics 10 (16), 1899, 2021 | 2 | 2021 |
