| High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment Y Cai, Y Zhou, KJ Chen, KM Lau Electron Device Letters, IEEE 26 (7), 435-437, 2005 | 845 | 2005 |
| Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode Y Cai, Y Zhou, KM Lau, KJ Chen Electron Devices, IEEE Transactions on 53 (9), 2207-2215, 2006 | 682 | 2006 |
| Growth of high quality GaN layers with AlN buffer on Si (111) substrates P Chen, R Zhang, ZM Zhao, DJ Xi, B Shen, ZZ Chen, YG Zhou, SY Xie, ... Journal of crystal growth 225 (2), 150-154, 2001 | 177 | 2001 |
| AlGaN-GaN double-channel HEMTs R Chu, Y Zhou, J Liu, D Wang, KJ Chen, KM Lau Electron Devices, IEEE Transactions on 52 (4), 438-446, 2005 | 150 | 2005 |
| AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement J Liu, Y Zhou, J Zhu, KM Lau, KJ Chen Electron Device Letters, IEEE 27 (1), 10-12, 2006 | 125 | 2006 |
| Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer T Lu, S Li, C Liu, K Zhang, Y Xu, J Tong, L Wu, H Wang, X Yang, Y Yin, ... Applied Physics Letters 100 (14), 141106, 2012 | 90 | 2012 |
| DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs J Liu, Y Zhou, J Zhu, Y Cai, KM Lau, KJ Chen Electron Devices, IEEE Transactions on 54 (1), 2-10, 2007 | 86 | 2007 |
| Highly linear Al 0.3 Ga 0.7 N-Al 0.05 Ga 0.95 N-GaN composite-channel HEMTs J Liu, Y Zhou, R Chu, Y Cai, KJ Chen, KM Lau Electron Device Letters, IEEE 26 (3), 145-147, 2005 | 70* | 2005 |
| Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si 3 N 4 surface-passivation-induced strain solidification ZH Feng, YG Zhou, SJ Cai, KM Lau Applied physics letters 85 (22), 5248-5250, 2004 | 61 | 2004 |
| Deposition and crystallization of amorphous GaN buffer layers on Si (111) substrates P Chen, SY Xie, ZZ Chen, YG Zhou, B Shen, R Zhang, YD Zheng, JM Zhu, ... Journal of crystal growth 213 (1), 27-32, 2000 | 50 | 2000 |
| The oxidation of gallium nitride epilayers in dry oxygen P Chen, R Zhang, XF Xu, YG Zhou, ZZ Chen, SY Xie, WP Li, YD Zheng Applied Physics A 71 (2), 191-194, 2000 | 49 | 2000 |
| Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition B Shen, YG Zhou, ZZ Chen, P Chen, R Zhang, Y Shi, YD Zheng, W Tong, ... Applied Physics A 68 (5), 593-596, 1999 | 49 | 1999 |
| Broadband microwave noise characteristics of high-linearity composite-channel Al 0.3 Ga 0.7 N/Al 0.05 Ga 0.95 N/GaN HEMTs Z Cheng, J Liu, Y Zhou, Y Cai, KJ Chen, KM Lau Electron Device Letters, IEEE 26 (8), 521-523, 2005 | 46* | 2005 |
| Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors RM Chu, YG Zhou, YD Zheng, P Han, B Shen, SL Gu Applied Physics Letters 79 (14), 2270-2272, 2001 | 46 | 2001 |
| A Low Phase-Noise-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel HEMTs ZQ Cheng, Y Cai, J Liu, Y Zhou, KM Lau, KJ Chen Microwave Theory and Techniques, IEEE Transactions on 55 (1), 23-29, 2007 | 45 | 2007 |
| Studies of metal–ferroelectric–GaN structures WP Li, R Zhang, YG Zhou, J Yin, HM Bu, ZY Luo, B Shen, Y Shi, RL Jiang, ... Applied physics letters 75 (16), 2416-2417, 1999 | 37 | 1999 |
| Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor CS Chu, Y Zhou, KJ Chen, KM Lau Electron Device Letters, IEEE 26 (7), 432-434, 2005 | 32 | 2005 |
| Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures RM Chu, YG Zhou, KJ Chen, KM Lau physica status solidi (c), 2400-2403, 2003 | 32 | 2003 |
| Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer C Liu, T Lu, L Wu, H Wang, Y Yin, G Xiao, Y Zhou, S Li Photonics Technology Letters, IEEE 24 (14), 1239-1241, 2012 | 31 | 2012 |
| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Blue InGaN light-emitting diodes with dip-shaped quantum wells TP Lu, ST Li, K Zhang, C Liu, GW Xiao, YG Zhou, SW Zheng, YA Yin, ... Chinese Physics B 20 (10), 108504, 2011 | 29 | 2011 |
