| Fabrication of conducting GeSi/Si micro-and nanotubes and helical microcoils SV Golod, VY Prinz, VI Mashanov, AK Gutakovsky Semiconductor Science and Technology 16 (3), 181, 2001 | 250 | 2001 |
| LEED studies of clean high Miller index surfaces of silicon BZ Olshanetsky, VI Mashanov Surface Science 111 (3), 414-428, 1981 | 179 | 1981 |
| GeSn-based pin photodiodes with strained active layer on a Si wafer HH Tseng, H Li, V Mashanov, YJ Yang, HH Cheng, GE Chang, RA Soref, ... Applied Physics Letters 103 (23), 2013 | 175 | 2013 |
| Mid-infrared electroluminescence from a Ge/Ge0. 922Sn0. 078/Ge double heterostructure pin diode on a Si substrate HH Tseng, KY Wu, H Li, V Mashanov, HH Cheng, G Sun, RA Soref Applied physics letters 102 (18), 2013 | 143 | 2013 |
| GeSn pin waveguide photodetectors on silicon substrates YH Peng, HH Cheng, VI Mashanov, GE Chang Applied Physics Letters 105 (23), 2014 | 110 | 2014 |
| LEED studies of clean high Miller index surfaces of germanium BZ Olshanetsky, VI Mashanov, AI Nikiforov Surface Science 111 (3), 429-440, 1981 | 65 | 1981 |
| Formation of SnO and SnO2 phases during the annealing of SnO (x) films obtained by molecular beam epitaxy A Nikiforov, V Timofeev, V Mashanov, I Azarov, I Loshkarev, V Volodin, ... Applied Surface Science 512, 145735, 2020 | 64 | 2020 |
| GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon SI Romanov, VI Mashanov, LV Sokolov, A Gutakovskii, OP Pchelyakov Applied Physics Letters 75 (26), 4118-4120, 1999 | 54 | 1999 |
| Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature IS Yu, TH Wu, KY Wu, HH Cheng, VI Mashanov, AI Nikiforov, ... Aip Advances 1 (4), 2011 | 44 | 2011 |
| Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures VA Timofeev, AI Nikiforov, AR Tuktamyshev, VI Mashanov, ID Loshkarev, ... Nanotechnology 29 (15), 154002, 2018 | 39 | 2018 |
| Free-standing conductive GeSi/Si helical microcoils, micro-and nanotubes VY Prinz, SV Golod, VI Mashanov, AK Gutakovsky Compound Semiconductors 1999, 203-206, 2000 | 31 | 2000 |
| Plastic relaxation of solid GeSi solutions grown by molecular-beam epitaxy on the low temperature Si (100) buffer layer YB Bolkhovityanov, AK Gutakovskii, VI Mashanov, OP Pchelyakov, ... Journal of applied physics 91 (7), 4710-4714, 2002 | 28 | 2002 |
| Strain-induced wrinkling on SiGe free standing film AI Fedorchenko, AB Wang, VI Mashanov, WP Huang, HH Cheng Applied physics letters 89 (4), 2006 | 27 | 2006 |
| Studying the morphology, structure and band diagram of thin GeSiSn films and their mid-infrared photoresponse V Timofeev, A Nikiforov, A Yakimov, V Mashanov, I Loshkarev, A Bloshkin, ... Semiconductor Science and Technology 34 (1), 014001, 2018 | 26 | 2018 |
| Reflection high energy electron diffraction studies on SixSnyGe1− x− y on Si (100) molecular beam epitaxial growth AI Nikiforov, VI Mashanov, VA Timofeev, OP Pchelyakov, HH Cheng Thin Solid Films 557, 188-191, 2014 | 26 | 2014 |
| Inelastic strain relaxation in the Ge quantum dot array AB Talochkin, VA Markov, VI Mashanov Applied Physics Letters 91 (9), 2007 | 26 | 2007 |
| Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers V Timofeev, A Nikiforov, A Tuktamyshev, V Mashanov, M Yesin, ... Nanoscale Research Letters 13, 1-8, 2018 | 25 | 2018 |
| Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation YB Bolkhovityanov, AK Gutakovskii, VI Mashanov, OP Pchelyakov, ... Thin Solid Films 392 (1), 98-106, 2001 | 25 | 2001 |
| Formation of GeSn alloy on Si (100) by low-temperature molecular beam epitaxy AB Talochkin, VI Mashanov Applied Physics Letters 105 (26), 2014 | 23 | 2014 |
| Super-dense array of Ge quantum dots grown on Si (100) by low-temperature molecular beam epitaxy AB Talochkin, AA Shklyaev, VI Mashanov Journal of Applied Physics 115 (14), 2014 | 23 | 2014 |
