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Ani Khachatrian
Ani Khachatrian
在 nrl.navy.mil 的电子邮件经过验证
标题
引用次数
引用次数
年份
Assembling programmable FRET-based photonic networks using designer DNA scaffolds
S Buckhout-White, CM Spillmann, WR Algar, A Khachatrian, JS Melinger, ...
Nature communications 5 (1), 5615, 2014
1622014
Radiation damage in wide and ultra-wide bandgap semiconductors
SJ Pearton, A Aitkaliyeva, M Xian, F Ren, A Khachatrian, A Ildefonso, ...
ECS Journal of Solid State Science and Technology 10 (5), 055008, 2021
852021
FRET from multiple pathways in fluorophore-labeled DNA
JS Melinger, A Khachatrian, MG Ancona, S Buckhout-White, ER Goldman, ...
Acs Photonics 3 (4), 659-669, 2016
712016
Concurrent modulation of quantum dot photoluminescence using a combination of charge transfer and forster resonance energy transfer: competitive quenching and multiplexed …
WR Algar, A Khachatrian, JS Melinger, AL Huston, MH Stewart, K Susumu, ...
Journal of the American Chemical Society 139 (1), 363-372, 2017
672017
Fabrication of terahertz metamaterials by laser printing
H Kim, JS Melinger, A Khachatrian, NA Charipar, RCY Auyeung, A Piqué
Optics letters 35 (23), 4039-4041, 2010
662010
Resonance energy transfer in DNA duplexes labeled with localized dyes
PD Cunningham, A Khachatrian, S Buckhout-White, JR Deschamps, ...
The Journal of Physical Chemistry B 118 (50), 14555-14565, 2014
572014
Single-event effect performance of a commercial embedded ReRAM
D Chen, H Kim, A Phan, E Wilcox, K LaBel, S Buchner, A Khachatrian, ...
IEEE Transactions on Nuclear Science 61 (6), 3088-3094, 2014
502014
A dosimetry methodology for two-photon absorption induced single-event effects measurements
A Khachatrian, NJH Roche, D McMorrow, JH Warner, SP Buchner, ...
IEEE Transactions on Nuclear Science 61 (6), 3416-3423, 2014
422014
Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs
I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, ...
IEEE transactions on Nuclear Science 61 (6), 3218-3225, 2014
392014
Experimental validation of an equivalent LET approach for correlating heavy-ion and laser-induced charge deposition
JM Hales, A Khachatrian, S Buchner, NJH Roche, J Warner, ...
IEEE Transactions on Nuclear Science 65 (8), 1724-1733, 2018
372018
Using TCAD modeling to compare heavy-ion and laser-induced single event transients in SiGe HBTs
ZE Fleetwood, NE Lourenco, A Ildefonso, JH Warner, MT Wachter, ...
IEEE Transactions on Nuclear Science 64 (1), 398-405, 2016
322016
A simplified approach for predicting pulsed-laser-induced carrier generation in semiconductor
JM Hales, A Khachatrian, S Buchner, NJH Roche, J Warner, D McMorrow
IEEE Transactions on Nuclear Science 64 (3), 1006-1013, 2017
312017
Optimizing optical parameters to facilitate correlation of laser-and heavy-ion-induced single-event transients in SiGe HBTs
A Ildefonso, ZE Fleetwood, GN Tzintzarov, JM Hales, D Nergui, ...
IEEE Transactions on Nuclear Science 66 (1), 359-367, 2018
302018
Simulation of laser-based two-photon absorption induced charge carrier generation in silicon
JM Hales, A Khachatrian, NJH Roche, JH Warner, SP Buchner, ...
IEEE Transactions on Nuclear Science 62 (4), 1550-1557, 2015
292015
Modeling and investigations on TID-ASETs synergistic effect in LM124 operational amplifier from three different manufacturers
F Roig, L Dusseau, A Khachatrian, NJH Roche, A Privat, JR Vaillé, J Boch, ...
IEEE Transactions on Nuclear Science 60 (6), 4430-4438, 2013
292013
A Comparison of Single-Event Transients in Pristine and Irradiated HEMTs using Two-Photon Absorption and Heavy Ions
A Khachatrian, NJH Roche, S Buchner, AD Koehler, TJ Anderson, ...
IEEE Transactions on Nuclear Science 62 (6), 2743-2751, 2015
282015
Direct observation of a Breit-Wigner phase of a wave function
JA Fiss, A Khachatrian, K Truhins, L Zhu, RJ Gordon, T Seideman
Physical review letters 85 (10), 2096, 2000
282000
New approach for pulsed-laser testing that mimics heavy-ion charge deposition profiles
JM Hales, A Khachatrian, S Buchner, J Warner, A Ildefonso, ...
IEEE Transactions on Nuclear Science 67 (1), 81-90, 2019
272019
The impact of technology scaling on the single-event transient response of SiGe HBTs
NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ...
IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016
272016
Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology
AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ...
IEEE transactions on Nuclear Science 61 (6), 3210-3217, 2014
262014
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