| Visible Light-Emitting Diodes SY Karpov Nitride semiconductor devices: principles and simulation, 303-325, 2007 | 593* | 2007 |
| Dislocation effect on light emission efficiency in gallium nitride SY Karpov, YN Makarov Applied Physics Letters 81 (25), 4721-4723, 2002 | 255 | 2002 |
| ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review S Karpov Optical and Quantum Electronics 47 (6), 1293-1303, 2015 | 247 | 2015 |
| Suppression of phase separation in InGaN due to elastic strain SY Karpov MRS Internet Journal of Nitride Semiconductor Research 3 (1), 16, 1998 | 241 | 1998 |
| Is Auger recombination responsible for the efficiency rollover in III‐nitride light‐emitting diodes? KA Bulashevich, SY Karpov physica status solidi c 5 (6), 2066-2069, 2008 | 148 | 2008 |
| From large‐size to micro‐LEDs: scaling trends revealed by modeling SS Konoplev, KA Bulashevich, SY Karpov physica status solidi (a) 215 (10), 1700508, 2018 | 138 | 2018 |
| GaN evaporation in molecular-beam epitaxy environment N Grandjean, J Massies, F Semond, SY Karpov, RA Talalaev Applied Physics Letters 74 (13), 1854-1856, 1999 | 136 | 1999 |
| Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes KA Bulashevich, SY Karpov physica status solidi (RRL)–Rapid Research Letters 10 (6), 480-484, 2016 | 130 | 2016 |
| Temperature-dependent internal quantum efficiency of blue high-brightness light-emitting diodes IE Titkov, SY Karpov, A Yadav, VL Zerova, M Zulonas, B Galler, ... IEEE Journal of Quantum Electronics 50 (11), 911-920, 2014 | 124 | 2014 |
| On mechanisms of sublimation growth of AlN bulk crystals AS Segal, SY Karpov, YN Makarov, EN Mokhov, AD Roenkov, MG Ramm, ... Journal of crystal growth 211 (1-4), 68-72, 2000 | 111 | 2000 |
| Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ... Applied Physics Letters 109 (16), 2016 | 104 | 2016 |
| Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT M Selder, L Kadinski, Y Makarov, F Durst, P Wellmann, T Straubinger, ... Journal of crystal growth 211 (1-4), 333-338, 2000 | 97 | 2000 |
| Simulation of visible and ultra-violet group-III nitride light emitting diodes KA Bulashevich, VF Mymrin, SY Karpov, IA Zhmakin, AI Zhmakin Journal of Computational Physics 213 (1), 214-238, 2006 | 85 | 2006 |
| Simulation of sublimation growth of SiC single crystals SY Karpov, YN Makarov, MS Ramm physica status solidi (b) 202 (1), 201-220, 1997 | 76 | 1997 |
| Modelling study of MQW LED operation VF Mymrin, KA Bulashevich, NI Podolskaya, IA Zhmakin, SY Karpov, ... physica status solidi (c) 2 (7), 2928-2931, 2005 | 73 | 2005 |
| Analysis of sublimation growth of bulk SiC crystals in tantalum container SY Karpov, AV Kulik, IA Zhmakin, YN Makarov, EN Mokhov, MG Ramm, ... Journal of crystal growth 211 (1-4), 347-351, 2000 | 72 | 2000 |
| Thermodynamic properties of group-III nitrides and related species IN Przhevalskii, SY Karpov, YN Makarov Materials Research Society Internet Journal of Nitride Semiconductor …, 1998 | 71 | 1998 |
| Propagation and transformation of electromagnetic waves in one-dimensional periodic structures SY Karpov, SN Stolyarov Physics-Uspekhi 36 (1), 1, 1993 | 71 | 1993 |
| Efficiency droop suppression in InGaN‐based blue LEDs: Experiment and numerical modelling DA Zakheim, AS Pavluchenko, DA Bauman, KA Bulashevich, ... physica status solidi (a) 209 (3), 456-460, 2012 | 70 | 2012 |
| Statistical model of ternary group-III nitrides SY Karpov, NI Podolskaya, IA Zhmakin, AI Zhmakin Physical Review B—Condensed Matter and Materials Physics 70 (23), 235203, 2004 | 66 | 2004 |
Roman TalalaevSTR Group在 str-soft.com 的电子邮件经过验证
