| A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies JC Smith, G Boselli 2003 Electrical Overstress/Electrostatic Discharge Symposium, 1-9, 2003 | 124 | 2003 |
| RF CMOS on high-resistivity substrates for system-on-chip applications K Benaissa, JY Yang, D Crenshaw, B Williams, S Sridhar, J Ai, G Boselli, ... IEEE Transactions on Electron Devices 50 (3), 567-576, 2003 | 105 | 2003 |
| Analysis of ESD protection components in 65nm CMOS technology: Scaling perspective and impact on ESD design window G Boselli, J Rodriguez, C Duvvury, J Smith 2005 Electrical Overstress/Electrostatic Discharge Symposium, 1-10, 2005 | 64 | 2005 |
| Latch-up in 65nm CMOS technology: a scaling perspective G Boselli, V Reddy, C Duvvury 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005 | 55 | 2005 |
| PMOS electrostatic discharge (ESD) protection device G Boselli, VK Reddy, EA Amerasekera US Patent 7,196,887, 2007 | 53 | 2007 |
| 3B. 6 A Low Leakage Low Cost-PMOS Based Power Supply Clamp with Active Feedback for ESD Protection in 65nm CMOS Technologies JC Smith, RA Cline, G Boselli ELECTRICAL OVERSTRESS ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS 2005, 298, 2005 | 45 | 2005 |
| Drain extended nMOS high current behavior and ESD protection strategy for HV applications in Sub-100nm CMOS technologies G Boselli, V Vassilev, C Duvvury 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 40 | 2007 |
| The relevance of long-duration TLP stress on system level ESD design G Boselli, A Salman, J Brodsky, H Kunz Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 1-10, 2010 | 38 | 2010 |
| The effects of angle of incidence and temperature on latchup in 65 nm technology JM Hutson, JD Pellish, G Boselli, R Baumann, RA Reed, RD Schrimpf, ... IEEE Transactions on Nuclear Science 54 (6), 2541-2546, 2007 | 34 | 2007 |
| Evidence for lateral angle effect on single-event latchup in 65 nm SRAMs JM Hutson, JA Pellish, AD Tipton, G Boselli, MA Xapsos, H Kim, ... IEEE Transactions on Nuclear Science 56 (1), 208-213, 2009 | 31 | 2009 |
| ESD and latch-up reliability for nanometer CMOS technologies C Duvvury, G Boselli IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 31 | 2004 |
| 0.1/spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications JY Yang, K Benaissa, D Crenshaw, B Williams, S Sridhar, J Ai, G Boselli, ... Digest. International Electron Devices Meeting,, 667-670, 2002 | 29* | 2002 |
| A flexible simulation model for system level ESD stresses with application to ESD design and troubleshooting R Mertens, H Kunz, A Salman, G Boselli, E Rosenbaum Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, 1-6, 2012 | 25 | 2012 |
| Efficient pnp characteristics of pMOS transistors in sub-0.13 µm ESD protection circuits G Boselli, C Duvvury, V Reddy 2002 Electrical Overstress/Electrostatic Discharge Symposium, 260-269, 2002 | 25 | 2002 |
| Overshoot-induced failures in forward-biased diodes: A new challenge to high-speed ESD design F Farbiz, A Appaswamy, AA Salman, G Boselli 2013 IEEE International Reliability Physics Symposium (IRPS), 2B. 1.1-2B. 1.8, 2013 | 24 | 2013 |
| Drain extended mos transistor having selectively silicided drain AA Salman, F Farbiz, AC Appaswamy, JE Kunz, G Boselli US Patent App. 13/441,318, 2013 | 23 | 2013 |
| Mutual ballasting multi-finger bidirectional ESD device AA Salman, F Farbiz, AM Concannon, G Boselli US Patent 9,224,724, 2015 | 22 | 2015 |
| Gate oxide failures due to anomalous stress from HBM ESD testers C Duvvury, R Steinhoff, G Boselli, V Reddy, H Kunz, S Marum, R Cline 2004 Electrical Overstress/Electrostatic Discharge Symposium, 1-9, 2004 | 22 | 2004 |
| Local ESD protection for low-capacitance applications C Duvvury, G Boselli US Patent 7,277,263, 2007 | 21 | 2007 |
| Investigations on double-diffused MOS (DMOS) transistors under ESD zap conditions G Boselli, S Meeuwsen, T Mouthaan, F Kuper Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 1999 …, 1999 | 20 | 1999 |
