| Comprehensive study of the Raman shifts of strained silicon and germanium CY Peng, CF Huang, YC Fu, YH Yang, CY Lai, ST Chang, CW Liu Journal of Applied Physics 105 (8), 2009 | 102 | 2009 |
| Nearly defect-free Ge gate-all-around FETs on Si substrates SH Hsu, CL Chu, WH Tu, YC Fu, PJ Sung, HC Chang, YT Chen, LY Cho, ... 2011 International Electron Devices Meeting, 35.2. 1-35.2. 4, 2011 | 39 | 2011 |
| High mobility high on/off ratio CV dispersion-free Ge n-MOSFETs and their strain response YC Fu, W Hsu, YT Chen, HS Lan, CH Lee, HC Chang, HY Lee, GL Luo, ... 2010 International Electron Devices Meeting, 18.5. 1-18.5. 4, 2010 | 27 | 2010 |
| The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0. 53Ga0. 47As (110) metal-oxide-semiconductor capacitors YC Fu, U Peralagu, DAJ Millar, J Lin, I Povey, X Li, S Monaghan, ... Applied Physics Letters 110 (14), 2017 | 22 | 2017 |
| Effects of applied mechanical uniaxial and biaxial tensile strain on the flatband voltage of (001),(110), and (111) metal–oxide–silicon capacitors CY Peng, YJ Yang, YC Fu, CF Huang, ST Chang, CW Liu IEEE transactions on electron devices 56 (8), 1736-1745, 2009 | 13 | 2009 |
| Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options U Peralagu, X Li, O Ignatova, YC Fu, DAJ Millar, MJ Steer, IM Povey, ... ECS Transactions 69 (5), 15, 2015 | 6 | 2015 |
| Plasma processing of III-V materials for energy efficient electronics applications I Thayne, X Li, D Millar, YC Fu, U Peralagu Advanced Etch Technology for Nanopatterning VI 10149, 87-95, 2017 | 3 | 2017 |
| Demonstration of genuine surface inversion for the p/n-In0. 3Ga0. 7Sb-Al2O3 MOS system with in situ H2 plasma cleaning DAJ Millar, U Peralagu, X Li, MJ Steer, YC Fu, PK Hurley, IG Thayne Applied Physics Letters 115 (23), 2019 | 1 | 2019 |
| Characteristics of In0. 7Ga0. 3As MOS Capacitors Obtained using Hydrochloric Acid Treatment, Ammonium Sulfide Passivation, Methanol Treatment, and Forming Gas Annealing ST Chung, YC Huang, YC Fu, YJ Lee, TS Chao ECS Journal of Solid State Science and Technology 8 (9), P457, 2019 | 1 | 2019 |
| Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface D Millar, S Supardan, S Peralagu, M Sousa, X Li, VR Dhanak, YC Fu, ... | 1 | 2017 |
| Improving the electrical properties of the In0. 3Ga0. 7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure D Millar, U Peralagu, X Li, YC Fu, G Gaspar, PK Hurley, IG Thayne 20th INFOS conference, 2017 | 1 | 2017 |
| First Demonstration of Cluster Tool Based ICP Etching of (100) and (110) InGaAs MOSCAPs Followed by In-Situ ALD Deposition of HfO2 Including Nitrogen and Hydrogen Plasma … YC Fu, U Peralagu, X Li, O Ignatova, DAJ Millar, M Steer, R Droopad, ... | 1 | 2015 |
| A Study of In-situ X-ray Photoelectron Spectroscopy Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication X Li, D Hemakumara, YC Fu, D Moran, I Thayne | | 2019 |
| The Impact of In-situ Hydrogen Plasma Passivation Prior to ALD HfO2 Deposition on the Electrical Properties of ICP Etched P-type InGaAs (110) MOSCAPs YC Fu, X Li, U Peralagu, D Millar, M Steer, H Zhou, R Droopad, IG Thayne | | 2017 |
| A Process Development on Inductively Coupled Plasma Reactive Ion Etching in Cl2/BCl3 Chemistry for Fabricating GaN-based Vertical Nanowires X Li, YC Fu, IG Thayne | | 2017 |
| Atomic layer etch processes developed in an ICP/RIE etching system for etching III-V compound semiconductor materials X Li, YC Fu, S Peralagu, S Cho, K Floros, D Hemakumara, M Smith, ... | | 2017 |
| Scaled HfO2/In0. 53Ga0. 47As MOSCAPs via Inserting TiN Caping Layer for III-V Low Power Device Application YC Fu, X Li, U Peralagu, D Hemakumara, DAJ Millar, M Steer, IG Thayne | | 2017 |
| Improving the electrical properties of the In0.3Ga0.7Sb-Al2O3 interface via in-situ H2 plasma and TMA exposure D Millar, U Peralagu, X Li, YC Fu, G Gaspar, P Hurley, I Thayne | | 2017 |
| The Impact of an HBr/Ar Atomic Layer Etch (ALE) Process for InGaAs Vertical Nanowire Diameter Reduction on the Interface Between InGaAs and In-situ ALD Deposited HfO2 X Li, YC Fu, DAJ Millar, U Peralagu, M Steer, IG Thayne | | 2016 |
| Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer … D Millar, U Peralagu, YC Fu, X Li, M Steer, I Thayne | | 2016 |
