| A review of gate tunneling current in MOS devices JC Ranuárez, MJ Deen, CH Chen Microelectronics reliability 46 (12), 1939-1956, 2006 | 263 | 2006 |
| Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors D Landheer, G Aers, WR McKinnon, MJ Deen, JC Ranuarez Journal of applied physics 98 (4), 2005 | 213 | 2005 |
| Noise considerations in field-effect biosensors MJ Deen, MW Shinwari, JC Ranuárez, D Landheer Journal of applied physics 100 (7), 2006 | 168 | 2006 |
| Procedure for determining diode parameters at very low forward voltage JC Ranuarez, FJG Sánchez, A Ortiz-Conde Solid-State Electronics 43 (12), 2129-2133, 1999 | 55 | 1999 |
| A new method to extract diode parameters under the presence of parasitic series and shunt resistance JC Ranuárez, A Ortiz-Conde, FJG Sánchez Microelectronics Reliability 40 (2), 355-358, 2000 | 33 | 2000 |
| Modeling the partition of noise from the gate-tunneling current in MOSFETs JC Ranuárez, MJ Deen, CH Chen IEEE electron device letters 26 (8), 550-552, 2005 | 21 | 2005 |
| CMOS distributed amplifiers JC Ranuarez, YK Ramadass, MJ Deen Proceedings of the Fifth IEEE International Caracas Conference on Devices …, 2004 | 6 | 2004 |
| Broadband microwave amplifiers in deep sub-micron CMOS technology JC Ranuarez | 5 | 2005 |
| Temperature effects in complementary metal-oxide semiconductor microwave distributed amplifiers JC Ranuarez, MJ Deen, CH Chen Journal of Vacuum Science & Technology A 24 (3), 831-834, 2006 | 3 | 2006 |
| Effect of the gate tunneling current on the high-frequency noise of MOSFETs MJ Deen, JC Ranuárez, CH Chen Workshop on compact modeling 8, 12, 2005 | 3 | 2005 |
| Highly Sensitive Integrated Biosensors J Ranuarez, J Deen ECS Meeting Abstracts, 394, 2006 | | 2006 |
| Papers from the 12th Canadian Semiconductor Technology Conference-Components for Wireless Communication-Temperature effects in complementary metal-oxide semiconductor microwave … JC Ranuarez, MJ Deen, CH Chen Journal of Vacuum Science and Technology-Section A 24 (3), 831-834, 2006 | | 2006 |
| The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs J Deen, JC Ranuárez, CH Chen | | |
MJ DeenDistinguished University Professor, McMaster University在 mcmaster.ca 的电子邮件经过验证
