| Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector A Kalra, S Vura, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Applied Physics Express 11 (6), 064101, 2018 | 101 | 2018 |
| Magneto-structural study of the multiferroic BiFeO3–SrTiO3 S Vura, PSA Kumar, A Senyshyn, R Ranjan Journal of magnetism and magnetic materials 365, 76-82, 2014 | 35 | 2014 |
| Investigation of Ta2O5 as an Alternative High- Dielectric for InAlN/GaN MOS-HEMT on Si S Kumar, H Kumar, S Vura, AS Pratiyush, VS Charan, SB Dolmanan, ... IEEE Transactions on Electron Devices 66 (3), 1230-1235, 2019 | 22 | 2019 |
| Monolithic Epitaxial Integration of β-Ga2O3 with 100 Si for Deep Ultraviolet Photodetectors S Vura, UU Muazzam, V Kumar, SC Vanjari, R Muralidharan, N Digbijoy, ... ACS Applied Electronic Materials 4 (4), 1619-1625, 2022 | 15 | 2022 |
| Epitaxial BaTiO3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer S Vura, V Jeyaselvan, R Biswas, V Raghunathan, SK Selvaraja, ... ACS Applied Electronic Materials 3 (2), 687-695, 2021 | 13 | 2021 |
| Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration S Vura, RK Rai, P Nukala, S Raghavan Thin Solid Films 758, 139456, 2022 | 10 | 2022 |
| Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing K Kumari, S Vura, S Raghavan, S Avasthi Materials Letters 285, 129208, 2021 | 7 | 2021 |
| Scandium-based ohmic contacts to InAlN/GaN heterostructures on silicon VS Charan, S Vura, R Muralidharan, S Raghavan, DN Nath IEEE Electron Device Letters 42 (4), 497-500, 2021 | 7 | 2021 |
| Synthesis and characterization of AlFe-CrNi four component high entropy alloy by mechanical alloying S Vura, DSD Ramya, PVP Sukumar, PBC Rao Int. J. Eng. Sci. Technol.(IJEST) 3 (5), 3876-3880, 2011 | 6 | 2011 |
| Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100) SK Parate, S Vura, S Pal, U Khandelwal, RS Sandilya Ventrapragada, ... Nature Communications 15 (1), 1428, 2024 | 4 | 2024 |
| Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate P Ravindra, R Chaudhary, E Athresh, S Vura, S Raghavan, R Ranjan, ... Semiconductor Science and Technology 36 (5), 055016, 2021 | 2 | 2021 |
| Texture and phase transition hysteresis in epitaxially integrated VO2 films on TiN/Si (100) S Ventrapragada, Rama Satya, AR Singh, S Vura, SK Parate, ... Materialia, 102085, 2024 | 1 | 2024 |
| TMAH Pretreatment to Minimize Ohmic Contact Resistance in InAlN/GaN-on-Si RF HEMTs VS Charan, A Venugopalarao, S Vura, R Muralidharan, S Raghavan, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On‐Current > 0.5 A mm−1 S Kumar, S Vura, SB Dolmanan, S Tripathy, R Muralidharan, DN Nath physica status solidi (a) 217 (7), 1900709, 2020 | 1 | 2020 |
| Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si A Haque, SK Mandal, A Jeyaseelan, S Vura, P Nukala, S Raghavan Materials Today Electronics 8, 100091, 2024 | | 2024 |
| Low Interface Resistance in Epitaxial β-Ga2O3 Vertical Power Diodes on Silicon (100) Using TiN Buffer M Mehta, Y Pattipati, AR Singh, RSS Ventrapragada, SC Vanjari, R Kant, ... ACS Applied Electronic Materials 6 (3), 2084-2092, 2024 | | 2024 |
| Epitaxial Integration Of Functional Oxides On Silicon (100) S Vura | | 2022 |
Digbijoy NathAssociate Professor at Indian Institute of Science在 iisc.ac.in 的电子邮件经过验证
