| Three-Dimensional Heterostructures of MoS2 Nanosheets on Conducting MoO2 as an Efficient Electrocatalyst To Enhance Hydrogen Evolution Reaction RD Nikam, AY Lu, PA Sonawane, UR Kumar, K Yadav, LJ Li, YT Chen ACS applied materials & interfaces 7 (41), 23328-23335, 2015 | 167 | 2015 |
| Enhanced Electrocatalytic Activity of MoSx on TCNQ-Treated Electrode for Hydrogen Evolution Reaction YH Chang, RD Nikam, CT Lin, JK Huang, CC Tseng, CL Hsu, CC Cheng, ... ACS applied materials & interfaces 6 (20), 17679-17685, 2014 | 92 | 2014 |
| Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity RD Nikam, M Kwak, J Lee, KG Rajput, W Banerjee, H Hwang Scientific reports 9 (1), 18883, 2019 | 74 | 2019 |
| Controlled ionic tunneling in lithium nanoionic synaptic transistor through atomically thin graphene layer for neuromorphic computing RD Nikam, M Kwak, J Lee, KG Rajput, H Hwang Advanced Electronic Materials 6 (2), 1901100, 2020 | 55 | 2020 |
| Epitaxial growth of vertically stacked p-MoS2/n-MoS2 heterostructures by chemical vapor deposition for light emitting devices RD Nikam, PA Sonawane, R Sankar, YT Chen Nano Energy 32, 454-462, 2017 | 51 | 2017 |
| Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing HH Revannath Dnyandeo Nikam,Jongwon Lee,Wooseok Choi,Writam Banerjee ... Small, 2021 | 43 | 2021 |
| Amorphous boron nitride memristive device for high-density memory and neuromorphic computing applications AC Khot, TD Dongale, KA Nirmal, JH Sung, HJ Lee, RD Nikam, TG Kim ACS Applied Materials & Interfaces 14 (8), 10546-10557, 2022 | 42 | 2022 |
| All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing RD Nikam, M Kwak, H Hwang Advanced Electronic Materials 7 (5), 2100142, 2021 | 38 | 2021 |
| Single‐atom quantum‐point contact switch using atomically thin hexagonal boron nitride RD Nikam, KG Rajput, H Hwang Small 17 (7), 2006760, 2021 | 36 | 2021 |
| Prospect and challenges of analog switching for neuromorphic hardware W Banerjee, RD Nikam, H Hwang Applied Physics Letters 120 (6), 2022 | 35 | 2022 |
| Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2. 7 stoichiometry with high ion diffusivity J Lee, RD Nikam, S Lim, M Kwak, H Hwang Nanotechnology 31 (23), 235203, 2020 | 33 | 2020 |
| Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts TJ Yoo, YJ Kim, SK Lee, CG Kang, KE Chang, HJ Hwang, N Revannath, ... Acs Photonics 5 (2), 365-370, 2018 | 33 | 2018 |
| High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0. 5Zr0. 5O2 devices by control of oxygen-deficient layer M Yadav, A Kashir, S Oh, RD Nikam, H Kim, H Jang, H Hwang Nanotechnology 33 (8), 085206, 2021 | 32 | 2021 |
| Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels J Lee, RD Nikam, M Kwak, H Kwak, S Kim, H Hwang Advanced Electronic Materials 7 (8), 2100219, 2021 | 28 | 2021 |
| Pr0.7Ca0.3MnO3-Based Three-Terminal Synapse for Neuromorphic Computing C Lee, KG Rajput, W Choi, M Kwak, RD Nikam, S Kim, H Hwang IEEE Electron Device Letters 41 (10), 1500-1503, 2020 | 23 | 2020 |
| Sodium-based nano-ionic synaptic transistor with improved retention characteristics K Lee, J Lee, RD Nikam, S Heo, H Hwang Nanotechnology 31 (45), 455204, 2020 | 21 | 2020 |
| Threshold voltage modulation of a graphene–ZnO barristor using a polymer doping process SY Kim, J Hwang, YJ Kim, HJ Hwang, M Son, N Revannath, MH Ham, ... Advanced Electronic Materials 5 (7), 1800805, 2019 | 21 | 2019 |
| Surface Diffusion and Epitaxial Self‐Planarization for Wafer‐Scale Single‐Grain Metal Chalcogenide Thin Films A Giri, M Kumar, J Kim, M Pal, W Banerjee, RD Nikam, J Kwak, M Kong, ... Advanced Materials 33 (35), 2102252, 2021 | 17 | 2021 |
| Strategies to improve the synaptic characteristics of oxygen-based electrochemical random-access memory based on material parameters optimization J Lee, RD Nikam, M Kwak, H Hwang ACS Applied Materials & Interfaces 14 (11), 13450-13457, 2022 | 16 | 2022 |
| Improved synaptic characteristics of oxide-based electrochemical random access memory at elevated temperatures using integrated micro-heater J Lee, RD Nikam, M Kwak, H Hwang IEEE Transactions on Electron Devices 69 (4), 2218-2221, 2022 | 12 | 2022 |
