| Fast MTF measurement of CMOS imagers using ISO 12333 slanted-edge methodology M Estribeau, P Magnan Detectors and Associated Signal Processing 5251, 243-252, 2004 | 167 | 2004 |
| Radiation effects in pinned photodiode CMOS image sensors: Pixel performance degradation due to total ionizing dose V Goiffon, M Estribeau, O Marcelot, P Cervantes, P Magnan, M Gaillardin, ... IEEE Transactions on Nuclear Science 59 (6), 2878-2887, 2012 | 107 | 2012 |
| Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology V Goiffon, M Estribeau, P Magnan IEEE transactions on electron devices 56 (11), 2594-2601, 2009 | 65 | 2009 |
| Pixel level characterization of pinned photodiode and transfer gate physical parameters in CMOS image sensors V Goiffon, M Estribeau, J Michelot, P Cervantes, A Pelamatti, O Marcelot, ... IEEE Journal of the Electron Devices Society 2 (4), 65-76, 2014 | 58 | 2014 |
| Estimation and modeling of the full well capacity in pinned photodiode CMOS image sensors A Pelamatti, V Goiffon, M Estribeau, P Cervantes, P Magnan IEEE electron device letters 34 (7), 900-902, 2013 | 57 | 2013 |
| Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors V Goiffon, C Virmontois, P Magnan, P Cervantes, S Place, M Gaillardin, ... IEEE Transactions on Nuclear Science 59 (4), 918-926, 2012 | 57 | 2012 |
| Theoretical models of modulation transfer function, quantum efficiency, and crosstalk for CCD and CMOS image sensors I Djite, M Estribeau, P Magnan, G Rolland, S Petit, O Saint-Pe IEEE Transactions on Electron Devices 59 (3), 729-737, 2012 | 55 | 2012 |
| Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors V Goiffon, M Estribeau, P Cervantes, R Molina, M Gaillardin, P Magnan IEEE Transactions on Nuclear Science 61 (6), 3290-3301, 2014 | 51 | 2014 |
| Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes V Goiffon, C Virmontois, P Magnan, P Cervantes, F Corbière, M Estribeau, ... Sensors, Systems, and Next-Generation Satellites XIV 7826, 486-497, 2010 | 38 | 2010 |
| Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes V Goiffon, P Cervantes, C Virmontois, F Corbière, P Magnan, M Estribeau IEEE Transactions on Nuclear Science 58 (6), 3076-3084, 2011 | 36 | 2011 |
| Radiation hardening of digital color CMOS camera-on-a-chip building blocks for multi-MGy total ionizing dose environments V Goiffon, S Rolando, F Corbiere, S Rizzolo, A Chabane, S Girard, J Baer, ... IEEE Transactions on Nuclear Science 64 (1), 45-53, 2016 | 35 | 2016 |
| Total ionizing dose effects on a radiation-hardened CMOS image sensor demonstrator for ITER remote handling V Goiffon, S Rizzolo, F Corbière, S Rolando, S Bounasser, M Sergent, ... IEEE Transactions on Nuclear Science 65 (1), 101-110, 2017 | 34 | 2017 |
| Fast MTF measurement of CMOS imagers at the chip level using ISO 12233 slanted-edge methodology M Estribeau, P Magnan Sensors, Systems, and Next-Generation Satellites VIII 5570, 557-567, 2004 | 26 | 2004 |
| Temperature dependence and dynamic behavior of full well capacity in pinned photodiode CMOS image sensors A Pelamatti, JM Belloir, C Messien, V Goiffon, M Estribeau, P Magnan, ... IEEE transactions on electron devices 62 (4), 1200-1207, 2015 | 25 | 2015 |
| Study of CCD transport on CMOS imaging technology: comparison between SCCD and BCCD, and ramp effect on the CTI O Marcelot, M Estribeau, V Goiffon, P Martin-Gonthier, F Corbière, ... IEEE Transactions on Electron Devices 61 (3), 844-849, 2014 | 23 | 2014 |
| Radiation effects in pinned photodiode CMOS image sensors: variation of epitaxial layer thickness C Virmontois, C Durnez, M Estribeau, P Cervantes, B Avon, V Goiffon, ... IEEE Transactions on Nuclear Science 64 (1), 38-44, 2016 | 22 | 2016 |
| Pixel crosstalk and correlation with modulation transfer function of CMOS image sensor M Estribeau, P Magnan Sensors and Camera Systems for Scientific and Industrial Applications VI …, 2005 | 22 | 2005 |
| Radiation effects in CMOS isolation oxides: Differences and similarities with thermal oxides M Gaillardin, V Goiffon, C Marcandella, S Girard, M Martinez, P Paillet, ... IEEE Transactions on Nuclear Science 60 (4), 2623-2629, 2013 | 20 | 2013 |
| Theoretical evaluation of MTF and charge collection efficiency in CCD and CMOS image sensors I Djité, P Magnan, M Estribeau, G Rolland, S Petit, O Saint-Pé Optical Modeling and Performance Predictions IV 7427, 45-56, 2009 | 20 | 2009 |
| Multi-mgy radiation hard cmos image sensor: Design, characterization and x/gamma rays total ionizing dose tests V Goiffon, F Corbière, S Rolando, M Estribeau, P Magnan, B Avon, J Baer, ... IEEE Transactions on nuclear science 62 (6), 2956-2964, 2015 | 19 | 2015 |
