| Strain mapping by measurement of the degree of polarization of photoluminescence DT Cassidy, SKK Lam, B Lakshmi, DM Bruce Applied optics 43 (9), 1811-1818, 2004 | 58 | 2004 |
| Analytical model for saturable aging in semiconductor lasers SKK Lam, RE Mallard, DT Cassidy Journal of applied physics 94 (3), 1803-1809, 2003 | 25 | 2003 |
| An extended multi-component model for the change of threshold current of semiconductor lasers as a function of time under the influence of defect annealing SKK Lam, RE Mallard, DT Cassidy Journal of applied physics 95 (5), 2264-2271, 2004 | 10 | 2004 |
| NMR and Monte Carlo simulation studies of water adsorption dynamics SKK Lam, H Peemoeller, ZY Chen Journal of colloid and interface science 248 (2), 255-259, 2002 | 4 | 2002 |
| Characterization of SiOx/Si/SiOx coated n-InP facets of semiconductor lasers using spatially-resolved photoluminescence SKK Lam, DT Cassidy, RE Mallard Japanese journal of applied physics 44 (11R), 8007, 2005 | 1 | 2005 |
| Effects of having two populations of defects growing in the cavity of a semiconductor laser SKK Lam, RE Mallard, DT Cassidy Journal of applied physics 94 (4), 2155-2161, 2003 | 1 | 2003 |
| Optics and Quantum Electronics-Characterization of SiQx/Si/SiOx Coated n-InP Facets of Semiconductor Lasers Using Spatially-Resolved Photoluminescence (Brief Communication) SKK Lam, DT Cassidy, RE Mallard Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes 44 …, 2005 | | 2005 |
