Fabrication of non-polar GaN based highly responsive and fast UV photodetector A Gundimeda, S Krishna, N Aggarwal, A Sharma, ND Sharma, KK Maurya, ... Applied Physics Letters 110 (10), 2017 | 208 | 2017 |
A highly responsive self‐driven UV photodetector using GaN nanoflowers N Aggarwal, S Krishna, A Sharma, L Goswami, D Kumar, S Husale, ... Advanced electronic materials 3 (5), 1700036, 2017 | 98 | 2017 |
Graphene quantum dot-sensitized ZnO-nanorod/GaN-nanotower heterostructure-based high-performance UV photodetectors L Goswami, N Aggarwal, R Verma, S Bishnoi, S Husale, R Pandey, ... ACS applied materials & interfaces 12 (41), 47038-47047, 2020 | 76 | 2020 |
Current advances in solar-blind photodetection technology: Using Ga 2 O 3 and AlGaN U Varshney, N Aggarwal, G Gupta Journal of Materials Chemistry C 10 (5), 1573-1593, 2022 | 74 | 2022 |
Pit assisted oxygen chemisorption on GaN surfaces M Mishra, SK TC, N Aggarwal, M Kaur, S Singh, G Gupta Physical Chemistry Chemical Physics 17 (23), 15201-15208, 2015 | 72 | 2015 |
Fabrication of GaN nano-towers based self-powered UV photodetector L Goswami, N Aggarwal, P Vashishtha, SK Jain, S Nirantar, J Ahmed, ... Scientific Reports 11 (1), 10859, 2021 | 68 | 2021 |
Extenuation of stress and defects in GaN films grown on a metal–organic chemical vapor deposition-GaN/c-sapphire substrate by plasma-assisted molecular beam epitaxy N Aggarwal, STC Krishna, L Goswami, M Mishra, G Gupta, KK Maurya, ... Crystal Growth & Design 15 (5), 2144-2150, 2015 | 64 | 2015 |
GaN nanotowers grown on Si (111) and functionalized with Au nanoparticles and ZnO nanorods for highly responsive UV photodetectors L Goswami, N Aggarwal, M Singh, R Verma, P Vashishtha, SK Jain, ... ACS Applied Nano Materials 3 (8), 8104-8116, 2020 | 63 | 2020 |
Enlightening gallium nitride-based UV photodetectors N Aggarwal, G Gupta Journal of Materials Chemistry C 8 (36), 12348-12354, 2020 | 63 | 2020 |
Surface chemistry and electronic structure of nonpolar and polar GaN films M Mishra, TCS Krishna, N Aggarwal, G Gupta Applied Surface Science 345, 440-447, 2015 | 61 | 2015 |
GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity SK Jain, N Aggarwal, S Krishna, R Kumar, S Husale, V Gupta, G Gupta Journal of Materials Science: Materials in Electronics 29, 8958-8963, 2018 | 59 | 2018 |
Effect of Different Finishing and Polishing Systems on the Surface Roughness of Resin Composite and Enamel: An: In vitro: Profilometric and Scanning Electron Microscopy Study K Bansal, S Gupta, V Nikhil, S Jaiswal, A Jain, N Aggarwal International Journal of Applied and Basic Medical Research 9 (3), 154-158, 2019 | 58 | 2019 |
Au-nanoplasmonics-mediated surface plasmon-enhanced GaN nanostructured UV photodetectors L Goswami, N Aggarwal, S Krishna, M Singh, P Vashishtha, SP Singh, ... ACS omega 5 (24), 14535-14542, 2020 | 51 | 2020 |
Current Transport and Band Alignment Study of MoS2/GaN and MoS2/AlGaN Heterointerfaces for Broadband Photodetection Application SK Jain, RR Kumar, N Aggarwal, P Vashishtha, L Goswami, S Kuriakose, ... ACS Applied Electronic Materials 2 (3), 710-718, 2020 | 51 | 2020 |
Ultrafast photoresponse and enhanced photoresponsivity of indium nitride based broad band photodetector S Krishna, A Sharma, N Aggarwal, S Husale, G Gupta Solar Energy Materials and Solar Cells 172, 376-383, 2017 | 50 | 2017 |
Surface-engineered nanostructure-based efficient nonpolar GaN ultraviolet photodetectors M Mishra, A Gundimeda, S Krishna, N Aggarwal, L Goswami, B Gahtori, ... ACS omega 3 (2), 2304-2311, 2018 | 42 | 2018 |
Technology assisted farming: Implications of IoT and AI N Aggarwal, D Singh IOP Conference Series: Materials Science and Engineering 1022 (1), 012080, 2021 | 38 | 2021 |
Effect of metal contacts on a GaN/sapphire-based MSM ultraviolet photodetector SK Jain, S Krishna, N Aggarwal, R Kumar, A Gundimeda, SC Husale, ... Journal of Electronic Materials 47, 6086-6090, 2018 | 36 | 2018 |
Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE S Krishna, N Aggarwal, M Mishra, KK Maurya, S Singh, N Dilawar, ... Physical Chemistry Chemical Physics 18 (11), 8005-8014, 2016 | 36 | 2016 |
Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (112 [combining macron] 0) sapphire grown by rf-molecular beam epitaxy TCS Krishna, N Aggarwal, GA Reddy, P Dugar, M Mishra, L Goswami, ... Rsc Advances 5 (89), 73261-73267, 2015 | 36 | 2015 |