关注
Hiroto Sekiguchi
Hiroto Sekiguchi
未知所在单位机构
在 tut.jp 的电子邮件经过验证
标题
引用次数
引用次数
年份
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
H Sekiguchi, K Kishino, A Kikuchi
Applied physics letters 96 (23), 2010
4862010
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
K Kishino, H Sekiguchi, A Kikuchi
Journal of Crystal Growth 311 (7), 2063-2068, 2009
3312009
Ti-mask selective-area growth of GaN by RF-plasma-assisted molecular-beam epitaxy for fabricating regularly arranged InGaN/GaN nanocolumns
H Sekiguchi, K Kishino, A Kikuchi
Applied physics express 1 (12), 124002, 2008
2282008
InGaN/GaN nanocolumn LEDs emitting from blue to red
K Kishino, A Kikuchi, H Sekiguchi, S Ishizawa
Gallium nitride materials and devices II 6473, 222-233, 2007
1512007
Structural and optical properties of GaN nanocolumns grown on (0 0 0 1) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy
H Sekiguchi, T Nakazato, A Kikuchi, K Kishino
Journal of crystal growth 300 (1), 259-262, 2007
1042007
Random laser action in GaN nanocolumns
M Sakai, Y Inose, K Ema, T Ohtsuki, H Sekiguchi, A Kikuchi, K Kishino
Applied Physics Letters 97 (15), 2010
982010
GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy
H Sekiguchi, K Kishino, A Kikuchi
Electronics Letters 44 (2), 1, 2008
792008
Ultraviolet GaN‐based nanocolumn light‐emitting diodes grown on n‐(111) Si substrates by rf‐plasma‐assisted molecular beam epitaxy
H Sekiguchi, K Kato, J Tanaka, A Kikuchi, K Kishino
physica status solidi (a) 205 (5), 1067-1069, 2008
542008
Plasma-induced damage and recovery on Au/n-GaN Schottky diode in different processes
CY Lee, H Sekiguchi, H Okada, A Wakahara
Japanese Journal of Applied Physics 51 (7R), 076503, 2012
422012
Selective growth of GaN nanocolumns by Al thin layer on substrate
S Ishizawa, H Sekiguchi, A Kikuchi, K Kishino
physica status solidi (b) 244 (6), 1815-1819, 2007
382007
Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy
Y Takagi, T Suwa, H Sekiguchi, H Okada, A Wakahara
Applied Physics Letters 99 (17), 2011
372011
Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE
A Wakahara, H Sekiguchi, H Okada, Y Takagi
Journal of luminescence 132 (12), 3113-3117, 2012
342012
Red-light-emitting diodes with site-selective Eu-doped GaN active layer
H Sekiguchi, Y Takagi, T Otani, R Matsumura, H Okada, A Wakahara
Japanese Journal of Applied Physics 52 (8S), 08JH01, 2013
332013
Semiconductor optical element array and method of manufacturing the same
K Kishino, A Kikuchi, H Sekiguchi
US Patent 9,224,595, 2015
292015
Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates
K Yamano, K Kishino, H Sekiguchi, T Oto, A Wakahara, Y Kawakami
Journal of Crystal Growth 425, 316-321, 2015
282015
Emission enhancement mechanism of GaN: Eu by Mg codoping
H Sekiguchi, Y Takagi, T Otani, H Okada, A Wakahara
Journal of Applied Physics 113 (1), 2013
282013
Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer
K Tsuchiyama, K Yamane, S Utsunomiya, H Sekiguchi, H Okada, ...
Applied Physics Express 9 (10), 104101, 2016
272016
Formation of InGaN quantum dots in regularly arranged GaN nanocolumns grown by rf‐plasma‐assisted molecular‐beam epitaxy
H Sekiguchi, K Kishino, A Kikuchi
physica status solidi c 7 (10), 2374-2377, 2010
242010
Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells
K Yamane, M Goto, K Takahashi, K Sato, H Sekiguchi, H Okada, ...
Applied Physics Express 10 (7), 075504, 2017
212017
Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns
K Kato, K Kishino, H Sekiguchi, A Kikuchi
Journal of crystal growth 311 (10), 2956-2961, 2009
212009
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