Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate H Sekiguchi, K Kishino, A Kikuchi Applied physics letters 96 (23), 2010 | 486 | 2010 |
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays K Kishino, H Sekiguchi, A Kikuchi Journal of Crystal Growth 311 (7), 2063-2068, 2009 | 331 | 2009 |
Ti-mask selective-area growth of GaN by RF-plasma-assisted molecular-beam epitaxy for fabricating regularly arranged InGaN/GaN nanocolumns H Sekiguchi, K Kishino, A Kikuchi Applied physics express 1 (12), 124002, 2008 | 228 | 2008 |
InGaN/GaN nanocolumn LEDs emitting from blue to red K Kishino, A Kikuchi, H Sekiguchi, S Ishizawa Gallium nitride materials and devices II 6473, 222-233, 2007 | 151 | 2007 |
Structural and optical properties of GaN nanocolumns grown on (0 0 0 1) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy H Sekiguchi, T Nakazato, A Kikuchi, K Kishino Journal of crystal growth 300 (1), 259-262, 2007 | 104 | 2007 |
Random laser action in GaN nanocolumns M Sakai, Y Inose, K Ema, T Ohtsuki, H Sekiguchi, A Kikuchi, K Kishino Applied Physics Letters 97 (15), 2010 | 98 | 2010 |
GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy H Sekiguchi, K Kishino, A Kikuchi Electronics Letters 44 (2), 1, 2008 | 79 | 2008 |
Ultraviolet GaN‐based nanocolumn light‐emitting diodes grown on n‐(111) Si substrates by rf‐plasma‐assisted molecular beam epitaxy H Sekiguchi, K Kato, J Tanaka, A Kikuchi, K Kishino physica status solidi (a) 205 (5), 1067-1069, 2008 | 54 | 2008 |
Plasma-induced damage and recovery on Au/n-GaN Schottky diode in different processes CY Lee, H Sekiguchi, H Okada, A Wakahara Japanese Journal of Applied Physics 51 (7R), 076503, 2012 | 42 | 2012 |
Selective growth of GaN nanocolumns by Al thin layer on substrate S Ishizawa, H Sekiguchi, A Kikuchi, K Kishino physica status solidi (b) 244 (6), 1815-1819, 2007 | 38 | 2007 |
Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy Y Takagi, T Suwa, H Sekiguchi, H Okada, A Wakahara Applied Physics Letters 99 (17), 2011 | 37 | 2011 |
Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE A Wakahara, H Sekiguchi, H Okada, Y Takagi Journal of luminescence 132 (12), 3113-3117, 2012 | 34 | 2012 |
Red-light-emitting diodes with site-selective Eu-doped GaN active layer H Sekiguchi, Y Takagi, T Otani, R Matsumura, H Okada, A Wakahara Japanese Journal of Applied Physics 52 (8S), 08JH01, 2013 | 33 | 2013 |
Semiconductor optical element array and method of manufacturing the same K Kishino, A Kikuchi, H Sekiguchi US Patent 9,224,595, 2015 | 29 | 2015 |
Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates K Yamano, K Kishino, H Sekiguchi, T Oto, A Wakahara, Y Kawakami Journal of Crystal Growth 425, 316-321, 2015 | 28 | 2015 |
Emission enhancement mechanism of GaN: Eu by Mg codoping H Sekiguchi, Y Takagi, T Otani, H Okada, A Wakahara Journal of Applied Physics 113 (1), 2013 | 28 | 2013 |
Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer K Tsuchiyama, K Yamane, S Utsunomiya, H Sekiguchi, H Okada, ... Applied Physics Express 9 (10), 104101, 2016 | 27 | 2016 |
Formation of InGaN quantum dots in regularly arranged GaN nanocolumns grown by rf‐plasma‐assisted molecular‐beam epitaxy H Sekiguchi, K Kishino, A Kikuchi physica status solidi c 7 (10), 2374-2377, 2010 | 24 | 2010 |
Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells K Yamane, M Goto, K Takahashi, K Sato, H Sekiguchi, H Okada, ... Applied Physics Express 10 (7), 075504, 2017 | 21 | 2017 |
Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns K Kato, K Kishino, H Sekiguchi, A Kikuchi Journal of crystal growth 311 (10), 2956-2961, 2009 | 21 | 2009 |