| All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ... Applied Physics Letters 113 (22), 2018 | 61 | 2018 |
| UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ... Optical Materials Express 9 (8), 3277-3291, 2019 | 41 | 2019 |
| Crystalline GeSn growth by plasma enhanced chemical vapor deposition W Dou, B Alharthi, PC Grant, JM Grant, A Mosleh, H Tran, W Du, ... Optical Materials Express 8 (10), 3220-3229, 2018 | 27 | 2018 |
| Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ... Journal of Electronic Materials 45, 6265-6272, 2016 | 23 | 2016 |
| Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications B Alharthi, W Dou, PC Grant, JM Grant, T Morgan, A Mosleh, W Du, B Li, ... Applied Surface Science 481, 246-254, 2019 | 16 | 2019 |
| Comparison study of the low temperature growth of dilute GeSn and Ge PC Grant, W Dou, B Alharthi, JM Grant, A Mosleh, W Du, B Li, M Mortazavi, ... Journal of Vacuum Science & Technology B 35 (6), 2017 | 16 | 2017 |
| Heteroepitaxial growth of germanium-on-silicon using ultrahigh-vacuum chemical vapor deposition with RF plasma enhancement B Alharthi, JM Grant, W Dou, PC Grant, A Mosleh, W Du, M Mortazavi, B Li, ... Journal of Electronic Materials 47, 4561-4570, 2018 | 14 | 2018 |
| Study of material and optical properties of SixGe1-x-ySny alloys for Si-based optoelectronic device applications B Alharthi, J Margetis, H Tran, S Al-kabi, W Dou, SA Ghetmiri, A Mosleh, ... Optical Materials Express 7 (10), 3517-3528, 2017 | 14 | 2017 |
| Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics G Abernathy, Y Zhou, S Ojo, B Alharthi, PC Grant, W Du, J Margetis, ... Journal of Applied Physics 129 (9), 2021 | 13 | 2021 |
| Development of SiGeSn technique towards mid-infrared devices in silicon photonics W Du, S Al-Kabi, S Ghetmiri, H Tran, T Pham, B Alharthi, A Mosleh, ... ECS Transactions 75 (8), 231, 2016 | 13 | 2016 |
| Enhancement of material quality of (Si) GeSn films grown by SnCl4 precursor A Mosleh, MA Alher, L Cousar, H Abusafe, W Dou, P Grant, S Al-Kabi, ... ECS Transactions 69 (5), 279, 2015 | 13 | 2015 |
| Growth and characterization of SiGe on c-plane sapphire using a chemical vapor deposition system A Sabbar, JM Grant, PC Grant, W Dou, B Alharthi, B Li, F Yurtsever, ... Journal of Electronic Materials 49, 4809-4815, 2020 | 3 | 2020 |
| Investigation of SiGeSn/GeSn/SiGeSn quantum well structures and optically pumped lasers on Si Y Zhou, J Margetis, G Abernathy, W Dou, PC Grant, B Alharthi, W Du, ... CLEO: Science and Innovations, STu3N. 3, 2019 | 3 | 2019 |
| Growth and Characterization of Silicon-Germanium-Tin Semiconductors for Future Nanophotonics Devices BS Alharthi University of Arkansas, 2018 | 2 | 2018 |
| CVD Growth and Characterization of SixGe1−x−ySny Alloys for High Efficiency Multi-Junction Solar Cells B Alharthi, A Mosleh, J Margetis, S Al-Kabi, SA Ghetmiri, H Tran, W Du, ... 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2817-2821, 2016 | 1 | 2016 |
| Effect of Cr-Doping on the Magnetic State of Er0.55Sr0.45Mn1−xCrxO3 KA Ziq, B Al-Harthi Journal of Superconductivity and Novel Magnetism 24, 299–302, 2011 | | 2011 |
| Effect of Cr-Doping on the Magnetic State of ErSrMnCrO. KA Ziq, B Al-Harthi Journal of Superconductivity & Novel Magnetism 24, 2011 | | 2011 |
| MAGNETIC AND TRANSPORT PROPERTIES OF Er0. 55Sr0. 45Mn1-xCrxO3 MANGANITES B Al-Harthi King Fahd University of Petroleum and Minerals, 2009 | | 2009 |
