| Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface K Yamamura, T Takiguchi, M Ueda, H Deng, AN Hattori, N Zettsu CIRP annals 60 (1), 571-574, 2011 | 211 | 2011 |
| Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry H Deng, K Hosoya, Y Imanishi, K Endo, K Yamamura Electrochemistry Communications 52, 5-8, 2015 | 119 | 2015 |
| Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing H Deng, K Yamamura CIRP Annals 62 (1), 575-578, 2013 | 92 | 2013 |
| Polishing and planarization of single crystal diamonds: state-of-the-art and perspectives H Luo, KM Ajmal, W Liu, K Yamamura, H Deng International Journal of Extreme Manufacturing 3 (2), 022003, 2021 | 62 | 2021 |
| Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface H Deng, K Endo, K Yamamura CIRP Annals 64 (1), 531-534, 2015 | 62 | 2015 |
| Damage-free finishing of CVD-SiC by a combination of dry plasma etching and plasma-assisted polishing H Deng, K Endo, K Yamamura International Journal of Machine Tools and Manufacture 115, 38-46, 2017 | 54 | 2017 |
| Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001) H Deng, K Endo, K Yamamura Scientific reports 5 (1), 8947, 2015 | 54 | 2015 |
| Optimization of the plasma oxidation and abrasive polishing processes in plasma-assisted polishing for highly effective planarization of 4H-SiC H Deng, K Monna, T Tabata, K Endo, K Yamamura CIRP Annals 63 (1), 529-532, 2014 | 49 | 2014 |
| Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process L Zhang, H Deng Applied Surface Science 514, 145957, 2020 | 40 | 2020 |
| High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching Y Zhang, H Chen, D Liu, H Deng Applied Surface Science 525, 146532, 2020 | 37 | 2020 |
| An efficient approach for atomic-scale polishing of single-crystal silicon via plasma-based atom-selective etching Z Fang, Y Zhang, R Li, Y Liang, H Deng International Journal of Machine Tools and Manufacture 159, 103649, 2020 | 36 | 2020 |
| Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing H Deng, N Liu, K Endo, K Yamamura Applied Surface Science 434, 40-48, 2018 | 34 | 2018 |
| A comprehensive study on electrochemical polishing of tungsten F Wang, X Zhang, H Deng Applied Surface Science 475, 587-597, 2019 | 33 | 2019 |
| Atomic-scale and damage-free polishing of single crystal diamond enhanced by atmospheric pressure inductively coupled plasma H Luo, KM Ajmal, W Liu, K Yamamura, H Deng Carbon 182, 175-184, 2021 | 32 | 2021 |
| Oxygen-shielded ultrasonic vibration cutting to suppress the chemical wear of diamond tools XQ Zhang, H Deng, K Liu CIRP Annals 68 (1), 69-72, 2019 | 32 | 2019 |
| Characterization of 4H-SiC (0001) surface processed by plasma-assisted polishing H Deng, M Ueda, K Yamamura The International Journal of Advanced Manufacturing Technology 72, 1-7, 2014 | 32 | 2014 |
| A generic approach of polishing metals via isotropic electrochemical etching R Yi, Y Zhang, X Zhang, F Fang, H Deng International Journal of Machine Tools and Manufacture 150, 103517, 2020 | 31 | 2020 |
| Damage-free dry polishing of 4H-SiC combined with atmospheric-pressure water vapor plasma oxidation H Deng, T Takiguchi, M Ueda, AN Hattori, N Zettsu, K Yamamura Japanese Journal of Applied Physics 50 (8S1), 08JG05, 2011 | 28 | 2011 |
| Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching Y Zhang, R Li, Y Zhang, D Liu, H Deng Journal of the European Ceramic Society 39 (9), 2831-2838, 2019 | 27 | 2019 |
| Suppression of diamond tool wear in machining of tungsten carbide by combining ultrasonic vibration and electrochemical processing X Zhang, R Huang, K Liu, AS Kumar, H Deng Ceramics International 44 (4), 4142-4153, 2018 | 26 | 2018 |
XinQuan ZHANGAssociate Professor, Shanghai Jiao Tong University在 sjtu.edu.cn 的电子邮件经过验证
