Analysis and design of millimeter-wave power amplifier using stacked-FET structure Y Kim, Y Kwon IEEE Transactions on Microwave Theory and Techniques 63 (2), 691-702, 2015 | 78 | 2015 |
A non-contact-type RF MEMS switch for 24-GHz radar applications J Park, ES Shim, W Choi, Y Kim, Y Kwon, D Cho Journal of Microelectromechanical systems 18 (1), 163-173, 2009 | 71 | 2009 |
A -Band Switched Beam-Forming Antenna Module Using Absorptive Switch Integrated With 44 Butler Matrix in 0.13- CMOS W Choi, K Park, Y Kim, K Kim, Y Kwon IEEE transactions on microwave theory and techniques 58 (12), 4052-4059, 2010 | 51 | 2010 |
A V-band beam-steering antenna on a thin-film substrate with a flip-chip interconnection S Lee, S Song, Y Kim, J Lee, CY Cheon, KS Seo, Y Kwon IEEE Microwave and wireless components letters 18 (4), 287-289, 2008 | 50 | 2008 |
A millimeter-wave system-on-package technology using a thin-film substrate with a flip-chip interconnection S Song, Y Kim, J Maeng, H Lee, Y Kwon, KS Seo IEEE transactions on advanced packaging 32 (1), 101-108, 2009 | 35 | 2009 |
A 60 GHz Cascode Variable-Gain Low-Noise Amplifier With Phase Compensation in a 0.13 CMOS Technology Y Kim, Y Kwon IEEE microwave and wireless components letters 22 (7), 372-374, 2012 | 33 | 2012 |
A 60 GHz broadband stacked FET power amplifier using 130 nm metamorphic HEMTs Y Kim, Y Koh, J Kim, S Lee, J Jeong, K Seo, Y Kwon IEEE microwave and wireless components letters 21 (6), 323-325, 2011 | 33 | 2011 |
X-to-K band broadband watt-level power amplifier using stacked-FET unit cells Y Park, Y Kim, W Choi, J Woo, Y Kwon 2011 IEEE Radio Frequency Integrated Circuits Symposium, 1-4, 2011 | 31 | 2011 |
A 18 GHz broadband stacked FET power amplifier using 130 nm metamorphic HEMTs C Lee, Y Kim, Y Koh, J Kim, K Seo, J Jeong, Y Kwon IEEE microwave and wireless components letters 19 (12), 828-830, 2009 | 22 | 2009 |
Semiconductor device and method for fabricating the same T Ohnishi, A Asai US Patent App. 10/009,201, 2002 | 21 | 2002 |
Power-efficient CMOS cellular RF receivers for carrier aggregation according to RF front-end configuration Y Kim, J Han, JS Lee, T Jin, P Jang, H Shin, J Lee, TB Cho IEEE Transactions on Microwave Theory and Techniques 69 (1), 452-468, 2020 | 16 | 2020 |
A current-efficient wideband cellular RF receiver for multi-band inter-and intra-band carrier aggregation using 14nm FinFET CMOS Y Kim, P Jang, T Jin, J Lee, H Shin, S Ahn, J Bae, J Han, S Heo, TB Cho 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 204-207, 2017 | 15 | 2017 |
A V-band switched beam-forming network using absorptive SP4T switch integrated with 4× 4 Butler matrix in 0.13-µm CMOS K Park, W Choi, Y Kim, K Kim, Y Kwon 2010 IEEE MTT-S International Microwave Symposium, 73-76, 2010 | 15 | 2010 |
V-band beam-steering ASK transmitter and receiver using BCB-based system-on-package technology on silicon mother board I Ju, Y Kim, S Lee, S Song, J Lee, C Cheon, KS Seo, Y Kwon IEEE microwave and wireless components letters 21 (11), 619-621, 2011 | 13 | 2011 |
An RF receiver for multi-band inter-and intra-band carrier aggregation Y Kim, P Jang, J Han, H Shin, S Ahn, D Kwon, J Choi, S Kang, S Heo, ... 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 79-82, 2016 | 10 | 2016 |
A V-band parallel-feedback oscillator with a micromachined cavity integrated on a thin-film substrate S Song, Y Kim, W Choi, Y Kwon, KS Seo IEEE microwave and wireless components letters 19 (2), 107-109, 2009 | 9 | 2009 |
A Ka-band phase shifting low noise amplifier with gain error compensation for 5G RF beam forming array using 14nm FinFET CMOS Y Kim, P Jang, J Lim, W Ko, S Heo, J Lee, TB Cho 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2018 | 8 | 2018 |
A broadband power-reconfigurable distributed amplifier J Kim, Y Kim, S Lee, J Jeong, Y Kwon 2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012 | 8 | 2012 |
Receiver and wireless terminal for signal processing YM Kim, J Pil-Sung, TB Cho, SC Heo US Patent 10,009,201, 2018 | 7 | 2018 |
High-efficiency 28-/39-GHz hybrid transceiver utilizing Si CMOS and GaAs HEMT for 5G NR millimeter-wave mobile applications Y Kim, H Park, S Yoo IEEE Solid-State Circuits Letters 6, 1-4, 2023 | 6 | 2023 |