Gate Workfunction Engineering for Deep Sub-Micron MOSFET's: Motivation, Features and Challenges F Ana, NU Din IJECT 2, 30-35, 2011 | 52 | 2011 |
Suppression of gate induced drain leakage current (GIDL) by gate work function engineering: analysis and model F Ana Journal of Electron Devices 13, 984-996, 2012 | 21 | 2012 |
An analytical modeling approach to the electrical behavior of the bottom-contact organic thin-film transistors in presence of the trap states F Ana Journal of Computational Electronics 18 (2), 543-552, 2019 | 9 | 2019 |
Design and performance investigation of short channel bottom-contact organic thin-film transistors F Ana, N Din Journal of Computational Electronics 17 (3), 1315-1323, 2018 | 9 | 2018 |
Optimisation of metal gate work function engineering for the deep sub-micron MOSFET's F Ana, D Najeeb-Ud-Din IJECT 3 (4), 2230e7109, 2012 | 5 | 2012 |
Effect of mobility degradation on the device performance of organic thin-film transistor's F Ana 2016 IEEE Region 10 Conference (TENCON), 3261-3264, 2016 | 4 | 2016 |
5G NOMA Defense Application Environment and Stacked LSTM Network Architectures R Shankar, MK Beuria, SS Singh, F Ana, H Mehraj, VG Krishnan Journal of Mobile Multimedia, 73-102, 2023 | 3 | 2023 |
Device performance optimization of organic thin-film transistors at short-channel lengths using vertical channel engineering techniques F Ana, N Din Semiconductors 55, 116-121, 2021 | 3 | 2021 |
Simulation study of the electrical behavior of bottom contact organic thin film transistors F Ana 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 2 | 2014 |
Dynamics of Trap States in Organic Thin-Film Transistors (OTFTs) F Ana, H Mehraj Advanced Field-Effect Transistors, 74-93, 2023 | | 2023 |
Multimodal biometric recognition using fused handcrafted features H Mehraj, AH Mir, F Ana Pollack Periodica 18 (3), 132-139, 2023 | | 2023 |
Modeling of Gate Resistance and Its Importance in Switching Circuits: A Review F Ana, H Mehraj IJRAR 6 (1), 539-547, 2019 | | 2019 |
Optimisation of metal gate workfunction engineering for deep sub-micron MOSFET’s ND Farkhanda Ana International Journal of Electronics & Communication Technology (IJECT) 2 (4 …, 2012 | | 2012 |
Leakage Current Mechanisms in Organic Thin-Film Transistors (Otft’S) for Low Power Design F Ana Available at SSRN 4543166, 0 | | |