| Patterning of narrow porous SiOCH trenches using a TiN hard mask M Darnon, T Chevolleau, D Eon, R Bouyssou, B Pelissier, L Vallier, ... Microelectronic engineering 85 (11), 2226-2235, 2008 | 41 | 2008 |
| Roughening of porous SiCOH materials in fluorocarbon plasmas F Bailly, T David, T Chevolleau, M Darnon, N Posseme, R Bouyssou, ... Journal of Applied Physics 108 (1), 2010 | 30 | 2010 |
| Contour based metrology: getting more from a SEM image B Le Gratiet, R Bouyssou, J Ducoté, C Dezauzier, A Ostrovsky, C Beylier, ... Metrology, Inspection, and Process Control for Microlithography XXXIII 10959 …, 2019 | 25 | 2019 |
| Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms N Posseme, T Chevolleau, R Bouyssou, T David, V Arnal, JP Barnes, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2010 | 24 | 2010 |
| Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films C Licitra, R Bouyssou, T Chevolleau, F Bertin Thin Solid Films 518 (18), 5140-5145, 2010 | 23 | 2010 |
| Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy M Darnon, T Chevolleau, T David, J Ducote, N Posseme, R Bouyssou, ... Journal of Vacuum Science & Technology B 28 (1), 149-156, 2010 | 19 | 2010 |
| Contour based metrology:“make measurable what is not so B Le-Gratiet, R Bouyssou, J Ducoté, A Ostrovsky, C Beylier, C Gardin, ... Metrology, Inspection, and Process Control for Microlithography XXXIV 11325 …, 2020 | 15 | 2020 |
| Scatterometric porosimetry: A new characterization technique for porous material patterned structures R Bouyssou, M El Kodadi, C Licitra, T Chevolleau, M Besacier, ... Journal of Vacuum Science & Technology B 28 (4), L31-L34, 2010 | 15 | 2010 |
| Integration and automation of DoseMapper in a logic Fab APC system: application for 45/40/28nm node B Le Gratiet, C Salagnon, J de Caunes, M Mikolajczak, V Morin, ... Metrology, Inspection, and Process Control for Microlithography XXVI 8324 …, 2012 | 14 | 2012 |
| Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions N Posseme, R Bouyssou, T Chevolleau, T David, V Arnal, M Darnon, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 14 | 2011 |
| Image based overlay measurement improvements of 28nm FD-SOI CMOS front-end critical steps F Dettoni, T Shapoval, R Bouyssou, T Itzkovich, R Haupt, C Dezauzier Metrology, Inspection, and Process Control for Microlithography XXXI 10145 …, 2017 | 10 | 2017 |
| Data fusion for CD metrology: heterogeneous hybridization of scatterometry, CDSEM, and AFM data J Hazart, N Chesneau, G Evin, A Largent, A Derville, R Thérèse, S Bos, ... Metrology, Inspection, and Process Control for Microlithography XXVIII 9050 …, 2014 | 10 | 2014 |
| Study of µDBO overlay target size reduction for application broadening V Calado, J Dépré, C Massacrier, S Tarabrin, R van Haren, F Dettoni, ... Metrology, Inspection, and Process Control for Microlithography XXXII 10585 …, 2018 | 9 | 2018 |
| Porous SiOCH integration: etch challenges with a trench first metal hard mask approach N Possémé, T David, T Chevolleau, M Darnon, P Brun, M Guillermet, ... ECS Transactions 34 (1), 389, 2011 | 8 | 2011 |
| A proof of concept of remote contour-based SEM metrology integration in HVM environment B Le Gratiet, R Bouyssou, J Ducoté, F Dettoni, T Bourguignon, V Morin, ... Metrology, Inspection, and Process Control XXXVI, PC120530S, 2022 | 7 | 2022 |
| Enabling on-device and target-free overlay measurement from CD-SEM contours T Bourguignon, R Bouyssou, J Pradelles, S Bérard-Bergery, B Le-Gratiet, ... Metrology, Inspection, and Process Control XXXVI 12053, 100-112, 2022 | 7 | 2022 |
| Enhanced 28nm FD-SOI diffraction based overlay metrology based on holistic metrology qualification F Dettoni, R Bouyssou, C Dezauzier, J Depre, S Meyer, C Prentice Metrology, Inspection, and Process Control for Microlithography XXXI 10145 …, 2017 | 7 | 2017 |
| Scatterometry-based metrology for the 14nm node double patterning lithography D Carau, R Bouyssou, J Ducoté, F Dettoni, A Ostrovsky, B Le Gratiet, ... Metrology, Inspection, and Process Control for Microlithography XXIX 9424 …, 2015 | 7 | 2015 |
| Alternative to H3PO4 for Si3N4 removal by using chemical downstream etching C de Buttet, O Gourhant, R Bouyssou, S Zoll ECS transactions 64 (39), 1, 2015 | 7 | 2015 |
| Method for optical characterisation C Licitra, M Besacier, R Bouyssou, T Chevolleau, M El Kodadi US Patent 8,248,621, 2012 | 7 | 2012 |
