| Silicon single-electron devices Y Takahashi, Y Ono, A Fujiwara, H Inokawa Journal of physics: Condensed matter 14 (39), R995, 2002 | 235 | 2002 |
| Epitaxial growth of Al on Si (111) and Si (100) by ionized‐cluster beam I Yamada, H Inokawa, T Takagi Journal of applied physics 56 (10), 2746-2750, 1984 | 219 | 1984 |
| Optimization of active surface area of flower like MoS2 using V-doping towards enhanced hydrogen evolution reaction in acidic and basic medium S Bolar, S Shit, JS Kumar, NC Murmu, RS Ganesh, H Inokawa, T Kuila Applied Catalysis B: Environmental 254, 432-442, 2019 | 194 | 2019 |
| Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities T Tanabe, K Nishiguchi, A Shinya, E Kuramochi, H Inokawa, M Notomi, ... Applied Physics Letters 90 (3), 2007 | 191 | 2007 |
| Pauli-spin-blockade transport through a silicon double quantum dot HW Liu, T Fujisawa, Y Ono, H Inokawa, A Fujiwara, K Takashina, ... Physical Review B—Condensed Matter and Materials Physics 77 (7), 073310, 2008 | 172 | 2008 |
| A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors H Inokawa, A Fujiwara, Y Takahashi IEEE Transactions on Electron Devices 50 (2), 462-470, 2003 | 169 | 2003 |
| Manipulation and detection of single electrons for future information processing Y Ono, A Fujiwara, K Nishiguchi, H Inokawa, Y Takahashi Journal of Applied Physics 97 (3), 2005 | 168 | 2005 |
| Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, H Inokawa, K Yamazaki, H Namatsu, Y Takahashi, ... Applied Physics Letters 88 (5), 2006 | 167 | 2006 |
| Conductance modulation by individual acceptors in Si nanoscale field-effect transistors Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi Applied Physics Letters 90 (10), 2007 | 145 | 2007 |
| A compact analytical model for asymmetric single-electron tunneling transistors H Inokawa, Y Takahashi IEEE Transactions on Electron Devices 50 (2), 455-461, 2003 | 139 | 2003 |
| Metal− semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation A Vijayaraghavan, K Kanzaki, S Suzuki, Y Kobayashi, H Inokawa, Y Ono, ... Nano letters 5 (8), 1575-1579, 2005 | 106 | 2005 |
| Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires D Moraru, Y Ono, H Inokawa, M Tabe Physical Review B—Condensed Matter and Materials Physics 76 (7), 075332, 2007 | 87 | 2007 |
| Development of carbon coated NiS2 as positive electrode material for high performance asymmetric supercapacitor S Ghosh, JS Kumar, NC Murmu, RS Ganesh, H Inokawa, T Kuila Composites Part B: Engineering 177, 107373, 2019 | 85 | 2019 |
| Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology K Nishiguchi, A Fujiwara, Y Ono, H Inokawa, Y Takahashi Applied physics letters 88 (18), 2006 | 84 | 2006 |
| A multiple-valued logic with merged single-electron and MOS transistors H Inokawa, A Fujiwara, Y Takahashi International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 84 | 2001 |
| A 0.5 V SIMOX-MTCMOS circuit with 200 ps logic gate T Douseki, S Shigematsu, Y Tanabe, M Harada, H Inokawa, T Tsuchiya 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical …, 1996 | 81 | 1996 |
| Evaluation of a copper metallization process and the electrical characteristics of copper-interconnected quarter-micron CMOS N Awaya, H Inokawa, E Yamamoto, Y Okazaki, M Miyake, Y Arita, ... IEEE Transactions on Electron Devices 43 (8), 1206-1212, 1996 | 80 | 1996 |
| Binary adders of multigate single-electron transistors: Specific design using pass-transistor logic Y Ono, H Inokawa, Y Takahashi IEEE Transactions on nanotechnology 1 (2), 93-99, 2002 | 76 | 2002 |
| Modeling, Simulation, Fabrication, and Characterization of a 10-W/cm2Class Si-Nanowire Thermoelectric Generator for IoT Applications M Tomita, S Oba, Y Himeda, R Yamato, K Shima, T Kumada, M Xu, ... IEEE Transactions on Electron Devices 65 (11), 5180-5188, 2018 | 75 | 2018 |
| Multipeak negative-differential-resistance device by combining single-electron and metal–oxide–semiconductor transistors H Inokawa, A Fujiwara, Y Takahashi Applied Physics Letters 79 (22), 3618-3620, 2001 | 62 | 2001 |
Akira FujiwaraNTT在 lab.ntt.co.jp 的电子邮件经过验证
