| Atomically precise placement of single dopants in Si SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ... Physical review letters 91 (13), 136104, 2003 | 491 | 2003 |
| Towards the fabrication of phosphorus qubits for a silicon quantum computer JL O’Brien, SR Schofield, MY Simmons, RG Clark, AS Dzurak, NJ Curson, ... Physical Review B 64 (16), 161401, 2001 | 276 | 2001 |
| Toward atomic-scale device fabrication in silicon using scanning probe microscopy FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ... Nano Letters 4 (10), 1969-1973, 2004 | 215 | 2004 |
| Quantum engineering at the silicon surface using dangling bonds SR Schofield, P Studer, CF Hirjibehedin, NJ Curson, G Aeppli, DR Bowler Nature communications 4 (1), 1649, 2013 | 196 | 2013 |
| Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer L Oberbeck, NJ Curson, MY Simmons, R Brenner, AR Hamilton, ... Applied physics letters 81 (17), 3197-3199, 2002 | 124 | 2002 |
| Progress in silicon-based quantum computing RG Clark, R Brenner, TM Buehler, V Chan, NJ Curson, AS Dzurak, ... Philosophical Transactions of the Royal Society of London. Series A …, 2003 | 90 | 2003 |
| Thermal dissociation and desorption of on Si(001): A reinterpretation of spectroscopic data HF Wilson, O Warschkow, NA Marks, NJ Curson, SR Schofield, ... Physical Review B 74 (19), 195310, 2006 | 81 | 2006 |
| Phosphine dissociation on the Si (001) surface HF Wilson, O Warschkow, NA Marks, SR Schofield, NJ Curson, PV Smith, ... Physical review letters 93 (22), 226102, 2004 | 81 | 2004 |
| Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy L Oberbeck, NJ Curson, T Hallam, MY Simmons, G Bilger, RG Clark Applied Physics Letters 85 (8), 1359-1361, 2004 | 73 | 2004 |
| Nondestructive imaging of atomically thin nanostructures buried in silicon G Gramse, A Kölker, T Lim, TJZ Stock, H Solanki, SR Schofield, ... Science advances 3 (6), e1602586, 2017 | 70 | 2017 |
| Scanning probe microscopy for silicon device fabrication MY Simmons, FJ Ruess, KEJ Goh, T Hallam, SR Schofield, L Oberbeck, ... Molecular Simulation 31 (6-7), 505-515, 2005 | 61 | 2005 |
| Single photon detection with a quantum dot transistor AJ Shields, MP O'Sullivan, I Farrer, DA Ritchie, ML Leadbeater, NK Patel, ... Japanese Journal of Applied Physics 40 (3S), 2058, 2001 | 61 | 2001 |
| Phosphine adsorption and dissociation on the Si(001) surface: An ab initio survey of structures O Warschkow, HF Wilson, NA Marks, SR Schofield, NJ Curson, PV Smith, ... Physical Review B 72 (12), 125328, 2005 | 60 | 2005 |
| STM characterization of the Si-P heterodimer NJ Curson, SR Schofield, MY Simmons, L Oberbeck, JL O’brien, RG Clark Physical Review B 69 (19), 195303, 2004 | 58 | 2004 |
| Atomic-scale patterning of arsenic in silicon by scanning tunneling microscopy TJZ Stock, O Warschkow, PC Constantinou, J Li, S Fearn, E Crane, ... ACS nano 14 (3), 3316-3327, 2020 | 52 | 2020 |
| Reaction paths of phosphine dissociation on silicon (001) O Warschkow, NJ Curson, SR Schofield, NA Marks, HF Wilson, ... The Journal of Chemical Physics 144 (1), 2016 | 48 | 2016 |
| Ballistic transport in a one-dimensional channel fabricated using an atomic force microscope NJ Curson, R Nemutudi, NJ Appleyard, M Pepper, DA Ritchie, GAC Jones Applied Physics Letters 78 (22), 3466-3468, 2001 | 45 | 2001 |
| Valence surface electronic states on Ge (001) MW Radny, GA Shah, SR Schofield, PV Smith, NJ Curson Physical review letters 100 (24), 246807, 2008 | 44 | 2008 |
| Phosphine dissociation and diffusion on Si (001) observed at the atomic scale SR Schofield, NJ Curson, O Warschkow, NA Marks, HF Wilson, ... The Journal of Physical Chemistry B 110 (7), 3173-3179, 2006 | 44 | 2006 |
| Imaging charged defects on clean with scanning tunneling microscopy GW Brown, H Grube, ME Hawley, SR Schofield, NJ Curson, MY Simmons, ... Journal of applied physics 92 (2), 820-824, 2002 | 42 | 2002 |
