| Sub-20 nm CMOS FinFET technologies YK Choi, N Lindert, P Xuan, S Tang, D Ha, E Anderson, TJ King, J Bokor, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 459 | 2001 |
| Extremely scaled silicon nano-CMOS devices L Chang, Y Choi, D Ha, P Ranade, S Xiong, J Bokor, C Hu, TJ King Proceedings of the IEEE 91 (11), 1860-1873, 2003 | 372 | 2003 |
| Observation of bulk defects by spectroscopic ellipsometry H Takeuchi, D Ha, TJ King Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (4 …, 2004 | 288 | 2004 |
| Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same GH Koh, DW Ha US Patent 7,843,718, 2010 | 242 | 2010 |
| FinFET process refinements for improved mobility and gate work function engineering YK Choi, L Chang, P Ranade, JS Lee, D Ha, S Balasubramanian, ... Digest. International Electron Devices Meeting,, 259-262, 2002 | 192 | 2002 |
| Investigation of gate-induced drain leakage (GIDL) current in thin body devices: single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs YK Choi, D Ha, TJ King, J Bokor Japanese journal of applied physics 42 (4S), 2073, 2003 | 133 | 2003 |
| Two-bit cell operation in diode-switch phase change memory cells with 90nm technology DH Kang, JH Lee, JH Kong, D Ha, J Yu, CY Um, JH Park, F Yeung, ... 2008 Symposium on VLSI Technology, 98-99, 2008 | 129 | 2008 |
| Method for fabricating MOS transistor C Cho, GH Koh, MH Lee, DW Ha US Patent 6,335,233, 2002 | 113 | 2002 |
| Recent advances in high density phase change memory (PRAM) D Ha, K Kim 2007 International Symposium on VLSI Technology, Systems and Applications …, 2007 | 95 | 2007 |
| Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain YK Choi, D Ha, TJ King, C Hu IEEE Electron Device Letters 22 (9), 447-448, 2001 | 89 | 2001 |
| Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs JS Lee, YK Choi, D Ha, S Balasubramanian, TJ King, J Bokor IEEE Electron Device Letters 24 (3), 186-188, 2003 | 88 | 2003 |
| Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications HJ Cho, HS Oh, KJ Nam, YH Kim, KH Yeo, WD Kim, YS Chung, YS Nam, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 86 | 2016 |
| Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications D Ha, C Yang, J Lee, S Lee, SH Lee, KI Seo, HS Oh, EC Hwang, SW Do, ... 2017 Symposium on VLSI Technology, T68-T69, 2017 | 78 | 2017 |
| Tunable work function molybdenum gate technology for FDSOI-CMOS P Ranade, YK Choi, D Ha, A Agarwal, M Ameen, TJ King Digest. International Electron Devices Meeting,, 363-366, 2002 | 74 | 2002 |
| Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs D Ha, H Takeuchi, YK Choi, TJ King IEEE transactions on electron devices 51 (12), 1989-1996, 2004 | 69 | 2004 |
| Reliability study of CMOS FinFETs YK Choi, D Ha, E Snow, J Bokor, TJ King IEEE International Electron Devices Meeting 2003, 7.6. 1-7.6. 4, 2003 | 69 | 2003 |
| Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices D Ha, C Cho, D Shin, GH Koh, TY Chung, K Kim IEEE Transactions on Electron Devices 46 (5), 940-946, 1999 | 67 | 1999 |
| Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2204904, 2023 | 64 | 2023 |
| Molybdenum gate HfO/sub 2/CMOS FinFET technology D Ha, H Takeuchi, YK Choi, TJ King, WP Bai, DL Kwong, A Agarwal, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 54 | 2004 |
| Impact of oxygen vacancies on high-/spl kappa/gate stack engineering H Takeuchi, HY Wong, D Ha, TJ King IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 51 | 2004 |
