| Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment Y Wang, S Liu, Q Li, R Quhe, C Yang, Y Guo, X Zhang, Y Pan, J Li, ... Reports on Progress in Physics 84 (5), 056501, 2021 | 121 | 2021 |
| Sub-10 nm two-dimensional transistors: Theory and experiment R Quhe, L Xu, S Liu, C Yang, Y Wang, H Li, J Yang, Q Li, B Shi, Y Li, ... Physics Reports 938, 1-72, 2021 | 120 | 2021 |
| Many-body effect and device performance limit of monolayer InSe Y Wang, R Fei, R Quhe, J Li, H Zhang, X Zhang, B Shi, L Xiao, Z Song, ... ACS applied materials & interfaces 10 (27), 23344-23352, 2018 | 111 | 2018 |
| Monolayer tellurene–metal contacts J Yan, X Zhang, Y Pan, J Li, B Shi, S Liu, J Yang, Z Song, H Zhang, M Ye, ... Journal of Materials Chemistry C 6 (23), 6153-6163, 2018 | 94 | 2018 |
| Sub 10 nm Bilayer Bi2O2Se Transistors J Yang, R Quhe, Q Li, S Liu, L Xu, Y Pan, H Zhang, X Zhang, J Li, J Yan, ... Advanced Electronic Materials 5 (3), 1800720, 2019 | 82 | 2019 |
| Excellent device performance of sub‐5‐nm monolayer tellurene transistors J Yan, H Pang, L Xu, J Yang, R Quhe, X Zhang, Y Pan, B Shi, S Liu, L Xu, ... Advanced Electronic Materials 5 (7), 1900226, 2019 | 76 | 2019 |
| Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices H Zhang, B Shi, L Xu, J Yan, W Zhao, Z Zhang, Z Zhang, J Lu ACS Applied Electronic Materials 3 (4), 1560-1571, 2021 | 66 | 2021 |
| Gate-tunable interfacial properties of in-plane ML MX 2 1T′–2H heterojunctions S Liu, J Li, B Shi, X Zhang, Y Pan, M Ye, R Quhe, Y Wang, H Zhang, J Yan, ... Journal of Materials Chemistry C 6 (21), 5651-5661, 2018 | 63 | 2018 |
| Monolayer honeycomb borophene: A promising anode material with a record capacity for lithium-ion and sodium-ion batteries J Li, GA Tritsaris, X Zhang, B Shi, C Yang, S Liu, J Yang, L Xu, J Yang, ... Journal of The Electrochemical Society 167 (9), 090527, 2020 | 54 | 2020 |
| Schottky Contact in Monolayer WS2 Field‐Effect Transistors H Tang, B Shi, Y Pan, J Li, X Zhang, J Yan, S Liu, J Yang, L Xu, J Yang, ... Advanced Theory and Simulations 2 (5), 1900001, 2019 | 53 | 2019 |
| Can carbon nanotube transistors be scaled down to the sub-5 nm gate length? L Xu, J Yang, C Qiu, S Liu, W Zhou, Q Li, B Shi, J Ma, C Yang, J Lu, ... ACS Applied Materials & Interfaces 13 (27), 31957-31967, 2021 | 51 | 2021 |
| Sub-5-nm monolayer silicane transistor: A first-principles quantum transport simulation Y Pan, J Dai, L Xu, J Yang, X Zhang, J Yan, J Li, B Shi, S Liu, H Hu, M Wu, ... Physical Review Applied 14 (2), 024016, 2020 | 50 | 2020 |
| Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors Y Pan, J Gu, H Tang, X Zhang, J Li, B Shi, J Yang, H Zhang, J Yan, S Liu, ... ACS Applied Nano Materials 2 (8), 4717-4726, 2019 | 39 | 2019 |
| Layer-Dependent Giant Magnetoresistance in Two-Dimensional Magnetic Tunnel Junctions J Yang, S Fang, Y Peng, S Liu, B Wu, R Quhe, S Ding, C Yang, J Ma, ... Physical Review Applied 16 (2), 024011, 2021 | 35 | 2021 |
| Monolayer GaS with high ion mobility and capacity as a promising anode battery material X Zhang, C Yang, Y Pan, M Weng, L Xu, S Liu, J Yang, J Yan, J Li, B Shi, ... Journal of Materials Chemistry A 7 (23), 14042-14050, 2019 | 34 | 2019 |
| n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors B Shi, Y Wang, J Li, X Zhang, J Yan, S Liu, J Yang, Y Pan, H Zhang, ... Physical Chemistry Chemical Physics 20 (38), 24641-24651, 2018 | 34 | 2018 |
| Interfacial properties of monolayer antimonene devices H Zhang, J Xiong, M Ye, J Li, X Zhang, R Quhe, Z Song, J Yang, Q Zhang, ... Physical Review Applied 11 (6), 064001, 2019 | 31 | 2019 |
| Performance limit of ultrathin GaAs transistors Q Li, S Fang, S Liu, L Xu, L Xu, C Yang, J Yang, B Shi, J Ma, J Yang, ... ACS Applied Materials & Interfaces 14 (20), 23597-23609, 2022 | 29 | 2022 |
| Sub-5 nm monolayer black phosphorene tunneling transistors H Li, B Shi, Y Pan, J Li, L Xu, L Xu, Z Zhang, F Pan, J Lu Nanotechnology 29 (48), 485202, 2018 | 26 | 2018 |
| Ultrahigh capacity of monolayer dumbbell C4N as a promising anode material for lithium-ion battery C Yang, X Zhang, J Ma, B Shi, H Zhang, L Xu, J Yang, S Liu, R Quhe, ... Journal of The Electrochemical Society 167 (2), 020538, 2020 | 24 | 2020 |
