Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules K Cho, M Min, TY Kim, H Jeong, J Pak, JK Kim, J Jang, SJ Yun, YH Lee, ... ACS nano 9 (8), 8044-8053, 2015 | 230 | 2015 |
Enhancement of photodetection characteristics of MoS 2 field effect transistors using surface treatment with copper phthalocyanine J Pak, J Jang, K Cho, TY Kim, JK Kim, Y Song, WK Hong, M Min, H Lee, ... Nanoscale 7 (44), 18780-18788, 2015 | 123 | 2015 |
Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms TY Kim, J Ha, K Cho, J Pak, J Seo, J Park, JK Kim, S Chung, Y Hong, ... ACS nano 11 (10), 10273-10280, 2017 | 87 | 2017 |
Recent advances in interface engineering of transition-metal dichalcogenides with organic molecules and polymers K Cho, J Pak, S Chung, T Lee ACS nano 13 (9), 9713-9734, 2019 | 82 | 2019 |
Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules K Cho, J Pak, JK Kim, K Kang, TY Kim, J Shin, BY Choi, S Chung, T Lee Advanced Materials 30 (18), 1705540, 2018 | 69 | 2018 |
Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 pn heterojunction diodes JK Kim, K Cho, TY Kim, J Pak, J Jang, Y Song, Y Kim, BY Choi, S Chung, ... Scientific reports 6 (1), 1-8, 2016 | 67 | 2016 |
Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields J Pak, Y Jang, J Byun, K Cho, TY Kim, JK Kim, BY Choi, J Shin, Y Hong, ... ACS nano 12 (7), 7109-7116, 2018 | 54 | 2018 |
Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure J Pak, I Lee, K Cho, JK Kim, H Jeong, WT Hwang, GH Ahn, K Kang, ... ACS nano 13 (8), 9638-9646, 2019 | 50 | 2019 |
Ultrasensitive Photodetection in MoS2 Avalanche Phototransistors J Seo, JH Lee, J Pak, K Cho, JK Kim, J Kim, J Jang, H Ahn, SC Lim, ... Advanced science 8 (19), 2102437, 2021 | 40 | 2021 |
Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer J Pak, M Min, K Cho, DH Lien, GH Ahn, J Jang, D Yoo, S Chung, A Javey, ... Applied Physics Letters 109 (18), 2016 | 38 | 2016 |
Analysis of the interface characteristics of CVD-grown monolayer MoS2 by noise measurements TY Kim, Y Song, K Cho, M Amani, GH Ahn, JK Kim, J Pak, S Chung, ... Nanotechnology 28 (14), 145702, 2017 | 19 | 2017 |
Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe2 Field-Effect Transistors J Kim, K Cho, J Pak, W Lee, J Seo, JK Kim, J Shin, J Jang, KY Baek, J Lee, ... ACS nano 16 (4), 5376-5383, 2022 | 15 | 2022 |
Trapped charge modulation at the MoS2/SiO2 interface by a lateral electric field in MoS2 field-effect transistors J Pak, K Cho, JK Kim, Y Jang, J Shin, J Kim, J Seo, S Chung, T Lee Nano Futures 3 (1), 011002, 2019 | 14 | 2019 |
Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors J Seo, K Cho, W Lee, J Shin, JK Kim, J Kim, J Pak, T Lee Nanoscale Research Letters 14, 1-10, 2019 | 12 | 2019 |
Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS2 field effect transistors JK Kim, Y Song, TY Kim, K Cho, J Pak, BY Choi, J Shin, S Chung, T Lee Nanotechnology 28 (47), 47LT01, 2017 | 12 | 2017 |
Energy consumption estimation of organic nonvolatile memory devices on a flexible plastic substrate J Jang, Y Song, D Yoo, K Cho, Y Kim, J Pak, M Min, T Lee Advanced Electronic Materials 1 (11), 1500186, 2015 | 12 | 2015 |
Dose-dependent effect of proton irradiation on electrical properties of WSe 2 ambipolar field effect transistors J Shin, K Cho, TY Kim, J Pak, JK Kim, W Lee, J Kim, S Chung, WK Hong, ... Nanoscale 11 (29), 13961-13967, 2019 | 8 | 2019 |
Interface effect in pentacene field-effect transistors from high energy proton beam irradiation TY Kim, J Jang, K Cho, Y Song, W Park, J Park, JK Kim, WK Hong, T Lee Organic Electronics 27, 240-246, 2015 | 8 | 2015 |
Effects of Electron Beam Irradiation and Thiol Molecule Treatment on the Properties of MoS2 Field Effect Transistors BY Choi, K Cho, J Pak, TY Kim, JK Kim, J Shin, J Seo, S Chung, T Lee Journal of the Korean Physical Society 72, 1203-1208, 2018 | 7 | 2018 |
ACS Nano 9, 8044 (2015) K Cho, M Min, TY Kim, H Jeong, J Pak, JK Kim, J Jang, SJ Yun, YH Lee, ... | 6 | |