β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 267 | 2022 |
Gallium Oxide: Materials Properties, Crystal Growth, and Devices M Higashiwaki, S Fujita Springer Nature, 2020 | 147 | 2020 |
Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors M Randle, A Lipatov, A Kumar, CP Kwan, J Nathawat, B Barut, S Yin, ... ACS nano 13 (1), 803-811, 2018 | 65 | 2018 |
Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1− x) 2O3/Ga2O3 heterostructures A Kumar, K Ghosh, U Singisetti Journal of Applied Physics 128 (10), 2020 | 30 | 2020 |
First principles study of thermoelectric properties of β-gallium oxide A Kumar, U Singisetti Applied Physics Letters 117 (26), 2020 | 18 | 2020 |
Modeling and power loss evaluation of ultra wide band gap Ga2O3 device for high power applications I Lee, A Kumar, K Zeng, U Singisetti, X Yao 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 4377-4382, 2017 | 16 | 2017 |
Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structures I Lee, A Kumar, K Zeng, U Singisetti, X Yao 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 15 | 2017 |
Plasmon–Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V–1 s–1 AK Rajapitamahuni, AK Manjeshwar, A Kumar, A Datta, P Ranga, ... ACS nano 16 (6), 8812-8819, 2022 | 14 | 2022 |
High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors MD Randle, A Lipatov, A Datta, A Kumar, I Mansaray, A Sinitskii, ... Applied Physics Letters 120 (7), 2022 | 10 | 2022 |
Building the quasi one dimensional transistor from 2D materials PV Galiy, M Randle, A Lipatov, L Wang, S Gilbert, N Vorobeva, A Kumar, ... 2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering …, 2019 | 5 | 2019 |
Correlated negative magnetization, exchange bias, and electrical properties in Deepak, A Kumar, AK Bera, SM Yusuf Physical Review Materials 6 (7), 074405, 2022 | 4 | 2022 |
Electrical Properties 2 K Ghosh, A Kumar, U Singisetti Gallium Oxide: Materials Properties, Crystal Growth, and Devices 293, 407, 2020 | 3 | 2020 |
Reply to “Comment on ‘Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors’” M Randle, A Lipatov, A Kumar, PA Dowben, A Sinitskii, U Singisetti, ... ACS nano 13 (8), 8498-8500, 2019 | 3 | 2019 |
Electron Transport in β-Ga2O3 from First-Principles A Kumar, K Ghosh, U Singisetti Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications, 7-1-7-12, 2023 | | 2023 |
7 ELECTRON TRANSPORT IN β-Ga2 O3 FROM FIRST-PRINCIPLES JS Speck, E Farzana Ultrawide Bandgap β-Ga2 O3 Semiconductor, 2023 | | 2023 |
Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1− x) 2O3/Ga2O3 heterostructures A Kumar, U Singisetti Journal of Applied Physics 132 (20), 2022 | | 2022 |
Low and High Field Electron Transport Study in β-(AlxGa1-x) 2O3/Ga2O3 Heterostructures Using Ab-initio Calculated Parameters A Kumar State University of New York at Buffalo, 2022 | | 2022 |
Gallium oxide based power and RF device technologies U Singisetti, S Sharma, K Zeng, A Vaidya, S Saha, A Kumar, A Sharma Radar Sensor Technology XXV 11742, 117420V, 2021 | | 2021 |
Low field transport calculation of 2-dimensional electron gas in beta-(AlxGa1-x)(2) O-3/Ga2O3 heterostructures (vol 128, 105703, 2020) A Kumar, K Ghosh, U Singisetti JOURNAL OF APPLIED PHYSICS 129 (10), 2021 | | 2021 |
(Invited) Electron Transport in Bulk and 2DEGs in beta-Ga2O3 and kV Class Laterals Device in beta-Ga2O3 K Ghosh, K Zhang, A Vaidya, A Sharma, A Kumar, U Singisetti Electrochemical Society Meeting Abstracts 237, 1336-1336, 2020 | | 2020 |