| Atomically engineered electron spin lifetimes of 30 s in silicon TF Watson, B Weber, YL Hsueh, LCL Hollenberg, R Rahman, ... Science advances 3 (3), e1602811, 2017 | 90 | 2017 |
| Spin-lattice relaxation times of single donors and donor clusters in silicon YL Hsueh, H Büch, Y Tan, Y Wang, LCL Hollenberg, G Klimeck, ... Physical review letters 113 (24), 246406, 2014 | 46 | 2014 |
| Interface-induced heavy-hole/light-hole splitting of acceptors in silicon JA Mol, J Salfi, R Rahman, Y Hsueh, JA Miwa, G Klimeck, MY Simmons, ... Applied Physics Letters 106 (20), 2015 | 21 | 2015 |
| Spin–orbit coupling in silicon for electrons bound to donors B Weber, YL Hsueh, TF Watson, R Li, AR Hamilton, LCL Hollenberg, ... npj Quantum Information 4 (1), 61, 2018 | 19 | 2018 |
| Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor R Krishnan, S Biswas, YL Hsueh, H Ma, R Rahman, B Weber Nano Letters 23 (13), 6171-6177, 2023 | 10 | 2023 |
| Spin-photon coupling for atomic qubit devices in silicon EN Osika, S Kocsis, YL Hsueh, S Monir, C Chua, H Lam, B Voisin, ... Physical Review Applied 17 (5), 054007, 2022 | 10 | 2022 |
| Hyperfine-mediated spin relaxation in donor-atom qubits in silicon YL Hsueh, L Kranz, D Keith, S Monir, Y Chung, SK Gorman, R Rahman, ... Physical Review Research 5 (2), 023043, 2023 | 7 | 2023 |
| Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots T Ameen, H Ilatikhameneh, J Charles, Y Hsueh, S Chen, J Fonseca, ... 14th IEEE International Conference on Nanotechnology, 921-924, 2014 | 6 | 2014 |
| Multi‐Scale Modeling of Tunneling in Nanoscale Atomically Precise Si: P Tunnel Junctions MB Donnelly, MM Munia, JG Keizer, Y Chung, AMSE Huq, EN Osika, ... Advanced Functional Materials 33 (18), 2214011, 2023 | 5 | 2023 |
| Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach H Ma, YL Hsueh, S Monir, Y Jiang, R Rahman Communications Physics 5 (1), 165, 2022 | 5 | 2022 |
| Shallow dopant pairs in silicon: An atomistic full configuration interaction study A Tankasala, B Voisin, Z Kembrey, J Salfi, YL Hsueh, EN Osika, S Rogge, ... Physical Review B 105 (15), 155158, 2022 | 5 | 2022 |
| Spin-orbit coupling in silicon for electrons bound to donors. npj Quantum Inf. 4 B Weber, YL Hsueh, TF Watson, R Li, AR Hamilton, LCL Hollenberg, ... | 5 | 2018 |
| High-fidelity initialization and control of electron and nuclear spins in a four-qubit register J Reiner, Y Chung, SH Misha, C Lehner, C Moehle, D Poulos, S Monir, ... Nature Nanotechnology, 1-7, 2024 | 4 | 2024 |
| Phonon induced two-electron relaxation in two donor qubits in silicon Y Hsueh, A Tankasala, Y Wang, G Klimeck, M Simmons, R Rahman APS March Meeting Abstracts 2016, Y5. 008, 2016 | 4 | 2016 |
| Shelving and latching spin readout in atom qubits in silicon EN Osika, SK Gorman, S Monir, YL Hsueh, M Borscz, H Geng, ... Physical Review B 106 (7), 075418, 2022 | 3 | 2022 |
| Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot TA Ameen, H Ilatikhameneh, A Tankasala, Y Hsueh, J Charles, J Fonseca, ... Beilstein Journal of Nanotechnology 9 (1), 1075-1084, 2018 | 3 | 2018 |
| Engineering Spin‐Orbit Interactions in Silicon Qubits at the Atomic‐Scale YL Hsueh, D Keith, Y Chung, SK Gorman, L Kranz, S Monir, Z Kembrey, ... Advanced Materials, 2312736, 2024 | 2 | 2024 |
| Limits to quantum gate fidelity from near-field thermal and vacuum fluctuations W Sun, S Bharadwaj, LP Yang, YL Hsueh, Y Wang, D Jiao, R Rahman, ... Physical Review Applied 19 (6), 064038, 2023 | 2 | 2023 |
| Impact of measurement backaction on nuclear spin qubits in silicon S Monir, EN Osika, SK Gorman, I Thorvaldson, YL Hsueh, P Macha, ... Physical Review B 109 (3), 035157, 2024 | 1 | 2024 |
| Limits to two-spin-qubit gate fidelity from thermal and vacuum fluctuations W Sun, S Bharadwaj, LP Yang, YL Hsueh, Y Wang, D Jiao, R Rahman, ... arXiv e-prints, arXiv: 2207.09441, 2022 | 1 | 2022 |
Rajib RahmanAssociate Professor of Physics, University of New South Wales在 unsw.edu.au 的电子邮件经过验证
