| Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3–xClx Perovskite for RRAM Application U Das, D Das, B Paul, T Rabha, S Pattanayak, A Kanjilal, S Bhattacharjee, ... ACS Applied Materials & Interfaces 12 (37), 41718-41727, 2020 | 56 | 2020 |
| Role of Oxygen Vacancy on the Hydrophobic Behavior of TiO2 Nanorods on Chemically Etched Si Pyramids CP Saini, A Barman, D Das, B Satpati, SR Bhattacharyya, D Kanjilal, ... The Journal of Physical Chemistry C 121 (1), 278-283, 2017 | 29 | 2017 |
| Influence of nanoscale charge trapping layer on the memory and synaptic characteristics of a novel rubidium lead chloride quantum dot based memristor U Das, PK Sarkar, D Das, B Paul, A Roy Advanced Electronic Materials 8 (5), 2101015, 2022 | 26 | 2022 |
| Synergistic effect of singly charged oxygen vacancies and ligand field for regulating transport properties of resistive switching memories D Das, A Barman, S Kumar, AK Sinha, M Gupta, R Singhal, P Johari, ... The Journal of Physical Chemistry C 123 (44), 26812-26822, 2019 | 17 | 2019 |
| Nanoscale self-recovery of resistive switching in Ar+ irradiated TiO2− x films A Barman, CP Saini, PK Sarkar, D Das, S Dhar, M Singh, AK Sinha, ... Journal of Physics D: Applied Physics 50 (47), 475304, 2017 | 8 | 2017 |
| Resistive switching properties and photoabsorption behavior of Ti ion implanted ZnO thin films AK Manna, P Dash, D Das, SK Srivastava, PK Sahoo, A Kanjilal, ... Ceramics International 48 (3), 3303-3310, 2022 | 6 | 2022 |
| Carbon doping controlled thermoluminescent defect centers in nanoporous alumina for ion beam dosimetry S Bhowmick, S Pal, D Das, VK Singh, SA Khan, R Hübner, SR Barman, ... Journal of Applied Physics 124 (13), 2018 | 5 | 2018 |
| Positive and Negative Pressure Regimes in Anisotropically Strained V2O3 Films E Barazani, D Das, C Huang, A Rakshit, C Saguy, P Salev, J del Valle, ... Advanced Functional Materials 33 (31), 2211801, 2023 | 4 | 2023 |
| Metal-induced progressive alteration of conducting states in memristors for implementing an efficient analog memory: a DFT-supported experimental approach D Das, A Barman, PK Sarkar, P Rajput, SN Jha, R Hübner, D Kanjilal, ... Journal of Materials Chemistry C 9 (9), 3136-3144, 2021 | 3 | 2021 |
| Modulation of the optical and transport properties of epitaxial SrNbO3 thin films by defect engineering S Kumar, J Ahammad, D Das, R Kumar, S Dhar, P Johari Journal of Applied Physics 135 (1), 2024 | 2 | 2024 |
| Experimental and theoretical evidence of ion engineering in nanocrystalline molybdenum disulfide memristors for non-filamentary switching actions and ultra-low-voltage synaptic … D Das, J Asirvatham, MA Luong, A Claverie, P Johari, A Kanjilal Journal of Materials Chemistry C 11 (23), 7782-7792, 2023 | 1 | 2023 |
| Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study A Barman, D Das, S Deshmukh, PK Sarkar, D Banerjee, R Hübner, ... ACS Applied Materials & Interfaces 14 (30), 34822-34834, 2022 | 1 | 2022 |
| Leaky Integrate‐and‐Fire Model and Short‐Term Synaptic Plasticity Emulated in a Novel Bismuth‐Based Diffusive Memristor P Zawal, G Abdi, M Gryl, D Das, A Sławek, EA Gerouville, ... Advanced Electronic Materials, 2300865, 2024 | | 2024 |
| Tuning the Transport Properties of Artificial Synapses: A DFT-Supported Experimental Approach DIP DAS, A Barman, PK Sarkar, R Hubner, D Kanjilal, P Johari, A Kanjilal Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Understanding the role of carbon in active trap centre formation in porous alumina for ion beam dosimetry S Bhowmick, S Pal, D Das, V Singh, S Khan, R Huebner, S Roybarman, ... APS March Meeting Abstracts 2019, S45. 003, 2019 | | 2019 |
| Experimental and computational evidence of defect centres in amorphous titanium dioxide and their confluence in resistive switching D Das, A Barman, A Sinha, M Gupta, DM Phase, R Singhal, S Zvyagin, ... APS March Meeting Abstracts 2019, E11. 010, 2019 | | 2019 |
