| Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs N Chugh, M Bhattacharya, M Kumar, SS Deswal, RS Gupta Journal of Computational Electronics 17, 1229-1240, 2018 | 12 | 2018 |
| Applicability of field plate in double channel GaN HEMT for radio-frequency and power-electronic applications N Chugh, M Kumar, S Haldar, M Bhattacharya, RS Gupta Silicon, 1-10, 2021 | 10 | 2021 |
| Sheet carrier concentration and threshold voltage modeling of asymmetrically doped AlGaN/GaN/AlGaN double heterostructure HEMT N Chugh, M Bhattacharya, M Kumar, RS Gupta 2017 4th IEEE Uttar Pradesh Section International Conference on Electrical …, 2017 | 9 | 2017 |
| Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps N Chugh, M Kumar, M Bhattacharya, RS Gupta Microsystem Technologies, 1-10, 2019 | 8 | 2019 |
| Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications N Chugh, M Kumar, M Bhattacharya, RS Gupta Microsystem Technologies 27, 4065-4072, 2021 | 6 | 2021 |
| Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications N Chugh, M Kumar, M Bhattacharya, RS Gupta Semiconductors 53, 1784-1791, 2019 | 6 | 2019 |
| Impact of temperature and Al composition on the threshold voltage and sheet carrier concentration of Al m Ga 1-m N/GaN/Al m Ga 1-m N double heterostructure HEMT N Chugh, M Bhattacharya, M Kumar, RS Gupta Publication in Springer proceedings in XIXth IWPSD, 2017 | 4 | 2017 |
| Impact of Donor Layer Thickness, Doping Concentration and Gate-Width on Gate-Capacitance of AlGaN/GaN Single and Double Heterostructure HEMT for Microwave Frequency Applications N Chugh, M Bhattacharya, M Kumar, RS Gupta 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 207-212, 2018 | 3 | 2018 |
| Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach N Chugh, S Haldar, M Bhattacharya, RS Gupta Microelectronics Journal 138, 105857, 2023 | 2 | 2023 |
| RF performance comparison of dual material gate (DMG) and conventional AlGaN/GaN high electron mobility transistor N Chugh, M Kumar, M Bhattacharya, RS Gupta 2018 4th International Conference on Devices, Circuits and Systems (ICDCS …, 2018 | 2 | 2018 |
| Microwave performance assessment of AlGaN/GaN/AlGaN DH-HEMT in terms of scattering parameters and various power gains N Chugh, M Kumar, M Bhattacharya, RS Gupta Microsystem Technologies 29 (6), 847-856, 2023 | | 2023 |
| Impact of donor-layer doping & thickness, gate-length and temperature on potential and electron concentration in AlGaN/GaN Double-Heterostructure and Single-Heterostructure HEMT N Chugh, M Kumar, M Bhattacharya, RS Gupta 2018 5th IEEE Uttar Pradesh Section International Conference on Electrical …, 2018 | | 2018 |
| Modeling simulation and characterization of field plated algangan double heterostructure hemt for high power and microwave frequency applications N Chugh Delhi, 0 | | |
| Design of Low Noise Amplifier at 8.72 GHZ D Parashar, N Chugh | | |
Dr. Manoj KumarNational Institute of Technology, Delhi在 nitdelhi.ac.in 的电子邮件经过验证
Dr. Manoj KumarNational Institute of Technology, Delhi在 nitdelhi.ac.in 的电子邮件经过验证
Monika BhattacharyaUniversity of Delhi
