Ultra-wide-bandgap AlGaN power electronic devices RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ... ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016 | 159 | 2016 |
An AlN/Al0. 85Ga0. 15N high electron mobility transistor AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ... Applied Physics Letters 109 (3), 2016 | 144 | 2016 |
High mobility InGaZnO4 thin-film transistors on paper W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ... Applied Physics Letters 94 (7), 2009 | 116 | 2009 |
Low-voltage indium gallium zinc oxide thin film transistors on paper substrates W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ... Applied Physics Letters 96 (5), 2010 | 95 | 2010 |
Reliability studies of AlGaN/GaN high electron mobility transistors DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ... Semiconductor Science and Technology 28 (7), 074019, 2013 | 67 | 2013 |
Degradation mechanisms for GaN and GaAs high speed transistors DJ Cheney, EA Douglas, L Liu, CF Lo, BP Gila, F Ren, SJ Pearton Materials 5 (12), 2498-2520, 2012 | 66 | 2012 |
Ohmic contacts to Al‐rich AlGaN heterostructures EA Douglas, S Reza, C Sanchez, D Koleske, A Allerman, B Klein, ... physica status solidi (a) 214 (8), 1600842, 2017 | 64 | 2017 |
Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors CY Chang, EA Douglas, J Kim, L Lu, CF Lo, BH Chu, DJ Cheney, BP Gila, ... IEEE Transactions on Device and Materials reliability 11 (1), 187-193, 2011 | 62 | 2011 |
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates AG Baca, BA Klein, JR Wendt, SM Lepkowski, CD Nordquist, ... IEEE Electron Device Letters 40 (1), 17-20, 2018 | 60 | 2018 |
Al-rich AlGaN based transistors AG Baca, AM Armstrong, BA Klein, AA Allerman, EA Douglas, RJ Kaplar Journal of Vacuum Science & Technology A 38 (2), 2020 | 55 | 2020 |
Al0. 85Ga0. 15N/Al0. 70Ga0. 30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature AG Baca, BA Klein, AA Allerman, AM Armstrong, EA Douglas, ... ECS Journal of Solid State Science and Technology 6 (12), Q161, 2017 | 49 | 2017 |
Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape W Lim, EA Douglas, SH Kim, DP Norton, SJ Pearton, F Ren, H Shen, ... Applied Physics Letters 93 (25), 2008 | 49 | 2008 |
AlGaN/GaN high electron mobility transistor degradation under on-and off-state stress EA Douglas, CY Chang, DJ Cheney, BP Gila, CF Lo, L Lu, R Holzworth, ... Microelectronics Reliability 51 (2), 207-211, 2011 | 46 | 2011 |
Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors PH Carey, F Ren, AG Baca, BA Klein, AA Allerman, AM Armstrong, ... IEEE Journal of the Electron Devices Society 7, 444-452, 2019 | 44 | 2019 |
Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers W Lim, EA Douglas, DP Norton, SJ Pearton, F Ren, YW Heo, SY Son, ... Journal of Vacuum Science & Technology B 28 (1), 116-119, 2010 | 44 | 2010 |
Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy EA Douglas, A Scheurmann, RP Davies, BP Gila, H Cho, V Craciun, ... Applied Physics Letters 98 (24), 2011 | 43 | 2011 |
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN high electron mobility transistors EA Douglas, CY Chang, BP Gila, MR Holzworth, KS Jones, L Liu, J Kim, ... Microelectronics Reliability 52 (1), 23-28, 2012 | 42 | 2012 |
Planar ohmic contacts to Al0. 45Ga0. 55N/Al0. 3Ga0. 7N high electron mobility transistors BA Klein, AG Baca, AM Armstrong, AA Allerman, CA Sanchez, ... ECS Journal of Solid State Science and Technology 6 (11), S3067, 2017 | 41 | 2017 |
Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors L Liu, TS Kang, DA Cullen, L Zhou, J Kim, CY Chang, EA Douglas, S Jang, ... Journal of Vacuum Science & Technology B 29 (3), 2011 | 41 | 2011 |
High temperature operation of Al0. 45Ga0. 55N/Al0. 30Ga0. 70N high electron mobility transistors AG Baca, AM Armstrong, AA Allerman, BA Klein, EA Douglas, ... ECS Journal of Solid State Science and Technology 6 (11), S3010, 2017 | 38 | 2017 |