| The controlled growth of GaN nanowires SD Hersee, X Sun, X Wang Nano letters 6 (8), 1808-1811, 2006 | 710 | 2006 |
| Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material SD Hersee, X Wang, X Sun US Patent 7,521,274, 2009 | 329 | 2009 |
| Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials D Zubia, SD Hersee Journal of applied physics 85 (9), 6492-6496, 1999 | 325 | 1999 |
| Nanostructured devices for separation and analysis GP Lopez, SRJ Brueck, LK Ista, M O'brien, SD Hersee US Patent 6,685,841, 2004 | 223 | 2004 |
| Unusually strong space-charge-limited current in thin wires AA Talin, F Léonard, BS Swartzentruber, X Wang, SD Hersee Physical review letters 101 (7), 076802, 2008 | 183 | 2008 |
| Threading defect elimination in GaN nanowires SD Hersee, AK Rishinaramangalam, MN Fairchild, L Zhang, P Varangis Journal of Materials Research 26 (17), 2293-2298, 2011 | 166 | 2011 |
| A study of the orientation dependence of Ga (Al) As growth by MOVPE SD Hersee, E Barbier, R Blondeau Journal of Crystal Growth 77 (1-3), 310-320, 1986 | 149 | 1986 |
| Nonalloyed Ti/Al ohmic contacts to n‐type GaN using high‐temperature premetallization anneal LF Lester, JM Brown, JC Ramer, L Zhang, SD Hersee, JC Zolper Applied physics letters 69 (18), 2737-2739, 1996 | 139 | 1996 |
| Threshold current of single quantum well lasers: The role of the confining layers J Nagle, S Hersee, M Krakowski, T Weil, C Weisbuch Applied physics letters 49 (20), 1325-1327, 1986 | 126 | 1986 |
| Effect of threading defects on InGaN∕ GaN multiple quantum well light emitting diodes MS Ferdous, X Wang, MN Fairchild, SD Hersee Applied Physics Letters 91 (23), 2007 | 119 | 2007 |
| Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy D Zubia, SH Zaidi, SRJ Brueck, SD Hersee Applied Physics Letters 76 (7), 858-860, 2000 | 117 | 2000 |
| GaN nanowire light emitting diodes based on templated and scalable nanowire growth process SD Hersee, M Fairchild, AK Rishinaramangalam, MS Ferdous, L Zhang, ... Electronics Letters 45 (1), 75-76, 2009 | 113 | 2009 |
| The operation of metalorganic bubblers at reduced pressure SD Hersee, JM Ballingall Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (2 …, 1990 | 113 | 1990 |
| Selective growth of Ge on Si(100) through vias of nanotemplate using solid source molecular beam epitaxy Q Li, SM Han, SRJ Brueck, S Hersee, YB Jiang, H Xu Applied Physics Letters 83 (24), 5032-5034, 2003 | 112 | 2003 |
| Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN JC Zolper, M Hagerott Crawford, AJ Howard, J Ramer, SD Hersee Applied physics letters 68 (2), 200-202, 1996 | 110 | 1996 |
| Low-pressure chemical vapor deposition SD Hersee, JP Duchemin Annual Review of Materials Science 12 (1), 65-80, 1982 | 108 | 1982 |
| Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure SD Hersee, B De Cremoux, JP Duchemin Applied physics letters 44 (5), 476-478, 1984 | 105 | 1984 |
| GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications JP Duchemin, JP Hirtz, M Razeghi, M Bonnet, SD Hersee Journal of Crystal Growth 55 (1), 64-73, 1981 | 100 | 1981 |
| Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells HS Gingrich, DR Chumney, SZ Sun, SD Hersee, LF Lester, SRJ Brueck IEEE Photonics Technology Letters 9 (2), 155-157, 1997 | 99 | 1997 |
| Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar L Zhang, J Ramer, J Brown, K Zheng, LF Lester, SD Hersee Applied physics letters 68 (3), 367-369, 1996 | 91 | 1996 |
