| Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride Y Lee, SM George ACS nano 9 (2), 2061-2070, 2015 | 196 | 2015 |
| Prospects for thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions SM George, Y Lee ACS nano 10 (5), 4889-4894, 2016 | 155 | 2016 |
| Surface-coating regulated lithiation kinetics and degradation in silicon nanowires for lithium ion battery L Luo, H Yang, P Yan, JJ Travis, Y Lee, N Liu, D Molina Piper, SH Lee, ... ACS nano 9 (5), 5559-5566, 2015 | 140 | 2015 |
| Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions Y Lee, JW DuMont, SM George Chemistry of Materials 28 (9), 2994-3003, 2016 | 121 | 2016 |
| Selectivity in thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions Y Lee, C Huffman, SM George Chemistry of Materials 28 (21), 7657-7665, 2016 | 117 | 2016 |
| Thermal Atomic Layer Etching of Titanium Nitride Using Sequential, Self-Limiting Reactions: Oxidation to TiO2 and Fluorination to Volatile TiF4 Y Lee, SM George Chemistry of Materials 29 (19), 8202-8210, 2017 | 90 | 2017 |
| Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride Y Lee, JW DuMont, AS Cavanagh, SM George The Journal of Physical Chemistry C 119 (25), 14185-14194, 2015 | 88 | 2015 |
| Atomic layer etching of HfO2 using sequential, self-limiting thermal reactions with Sn (acac) 2 and HF Y Lee, JW DuMont, SM George ECS Journal of Solid State Science and Technology 4 (6), N5013, 2015 | 85 | 2015 |
| Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination SM George, Y Lee, N Johnson US Patent 10,208,383, 2019 | 80 | 2019 |
| Coating Solution for High-Voltage Cathode: AlF3 Atomic Layer Deposition for Freestanding LiCoO2 Electrodes with High Energy Density and Excellent Flexibility Y Zhou, Y Lee, H Sun, JM Wallas, SM George, M Xie ACS applied materials & interfaces 9 (11), 9614-9619, 2017 | 76 | 2017 |
| Atomic layer deposition of metal fluorides using HF–pyridine as the fluorine precursor Y Lee, H Sun, MJ Young, SM George Chemistry of Materials 28 (7), 2022-2032, 2016 | 76 | 2016 |
| Mechanism of Thermal Al2O3 Atomic Layer Etching Using Sequential Reactions with Sn(acac)2 and HF Y Lee, JW DuMont, SM George Chemistry of Materials 27 (10), 3648-3657, 2015 | 75 | 2015 |
| Atomic layer deposition of LiOH and Li2CO3 using lithium t-butoxide as the lithium source AS Cavanagh, Y Lee, B Yoon, S George ECS transactions 33 (2), 223, 2010 | 73 | 2010 |
| Thermal atomic layer etching of HfO2 using HF for fluorination and TiCl4 for ligand-exchange Y Lee, SM George Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (6 …, 2018 | 52 | 2018 |
| Molecular layer deposition of aluminum alkoxide polymer films using trimethylaluminum and glycidol Y Lee, B Yoon, AS Cavanagh, SM George Langmuir 27 (24), 15155-15164, 2011 | 52 | 2011 |
| Thermal Atomic Layer Etching of Al2O3, HfO2, and ZrO2 Using Sequential Hydrogen Fluoride and Dimethylaluminum Chloride Exposures Y Lee, SM George The Journal of Physical Chemistry C 123 (30), 18455-18466, 2019 | 48 | 2019 |
| Molecular layer deposition of conductive hybrid organic-inorganic thin films using diethylzinc and hydroquinone B Yoon, Y Lee, A Derk, C Musgrave, S George ECS Transactions 33 (27), 191, 2011 | 48 | 2011 |
| Atomic Layer Etching of AlF3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride Y Lee, JW DuMont, SM George The Journal of Physical Chemistry C 119 (45), 25385-25393, 2015 | 46 | 2015 |
| Cross-linked aluminum dioxybenzene coating for stabilization of silicon electrodes DM Piper, Y Lee, SB Son, T Evans, F Lin, D Nordlund, X Xiao, SM George, ... Nano Energy 22, 202-210, 2016 | 40 | 2016 |
| First transistor demonstration of thermal atomic layer etching: InGaAs FinFETs with sub-5 nm fin-width featuring in situ ALE-ALD W Lu, Y Lee, J Murdzek, J Gertsch, A Vardi, L Kong, SM George, ... 2018 IEEE International Electron Devices Meeting (IEDM), 39.1. 1-39.1. 4, 2018 | 39 | 2018 |
