关注
F.R.Palomo
F.R.Palomo
其他姓名Francisco Rogelio Palomo Pinto, F.Pinto
profesor de Ingeniería Electrónica, Escuela Técnica Superior de Ingeniería, Universidad de Sevilla
在 us.es 的电子邮件经过验证
标题
引用次数
引用次数
年份
Reconfigurable distributed network control system for industrial plant automation
J García, FR Palomo, A Luque, C Aracil, JM Quero, D Carrión, F Gámiz, ...
IEEE Transactions on Industrial Electronics 51 (6), 1168-1180, 2004
812004
High-accuracy determination of the neutron flux in the new experimental area n_TOF-EAR2 at CERN
M Sabate-Gilarte, M Barbagallo, N Colonna, F Gunsing, P Žugec, ...
The European Physical Journal A 53, 1-13, 2017
722017
Design of control systems for portable PEM fuel cells
AP Vega-Leal, FR Palomo, F Barragan, C García, JJ Brey
Journal of power sources 169 (1), 194-197, 2007
682007
Compiler-directed soft error mitigation for embedded systems
A Martinez-Alvarez, S Cuenca-Asensi, F Restrepo-Calle, FRP Pinto, ...
IEEE Transactions on Dependable and Secure Computing 9 (2), 159-172, 2011
612011
FTUNSHADES2: A novel platform for early evaluation of robustness against SEE
JM Mogollon, H Guzman-Miranda, J Napoles, J Barrientos, MA Aguirre
2011 12th European Conference on Radiation and Its Effects on Components and …, 2011
602011
Nuclear data activities at the n_TOF facility at CERN
n_TOF Collaboration, F Gunsing, O Aberle, J Andrzejewski, L Audouin, ...
The European Physical Journal Plus 131, 1-13, 2016
472016
A novel co-design approach for soft errors mitigation in embedded systems
S Cuenca-Asensi, A Martinez-Alvarez, F Restrepo-Calle, FR Palomo, ...
IEEE Transactions on Nuclear Science 58 (3), 1059-1065, 2011
442011
Test results and prospects for RD53A, a large scale 65 nm CMOS chip for pixel readout at the HL-LHC
L Gaioni, RD53 Collaboration
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2019
342019
Simulation of total ionising dose in MOS capacitors
P Fernández-Martínez, I Cortés, S Hidalgo, D Flores, FR Palomo
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 1-4, 2011
342011
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC
N Demaria, MB Barbero, D Fougeron, F Gensolen, S Godiot, M Menouni, ...
Journal of Instrumentation 11 (12), C12058, 2016
302016
Mixed-mode simulation of bit-flip with pulsed laser
FR Palomo, JM Mogollon, J Napoles, MA Aguirre
IEEE Transactions on Nuclear Science 57 (4), 1884-1891, 2010
282010
Ionizing radiation hardness tests of GaN HEMTs for harsh environments
ACV Bôas, MAA de Melo, RBB Santos, R Giacomini, NH Medina, ...
Microelectronics Reliability 116, 114000, 2021
272021
Automatic single event effects sensitivity analysis of a 13-bit successive approximation ADC
F Márquez, F Munoz, FR Palomo, L Sanz, E Lopez-Morillo, MA Aguirre, ...
IEEE Transactions on Nuclear Science 62 (4), 1609-1616, 2015
262015
Measurement of 73Ge (n, γ) cross sections and implications for stellar nucleosynthesis
C Lederer-Woods, U Battino, P Ferreira, A Gawlik, C Guerrero, F Gunsing, ...
Physics letters B 790, 458-465, 2019
242019
Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses
G Borghello, E Lerario, F Faccio, HD Koch, G Termo, S Michelis, ...
Microelectronics Reliability 116, 114016, 2021
222021
Pulsed laser SEU cross section measurement using coincidence detectors
FR Palomo, JM Mogollon, J Napoles, H Guzman-Miranda, AP Vega-Leal, ...
IEEE Transactions on Nuclear Science 56 (4), 2001-2007, 2009
222009
Development of a tabletop setup for the transient current technique using two-photon absorption in silicon particle detectors
M Wiehe, MF García, M Moll, R Montero, FR Palomo, I Vila, ...
IEEE Transactions on Nuclear Science 68 (2), 220-228, 2020
212020
High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)
MF García, JG Sánchez, RJ Echeverría, M Moll, RM Santos, D Moya, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2017
202017
On the determination of the substrate effective doping concentration of irradiated HV-CMOS sensors using an edge-TCT technique based on the Two-Photon-Absorption process
MF García, JG Sánchez, RJ Echeverría, M Moll, R Montero, D Moya, ...
Journal of Instrumentation 12 (01), C01038, 2017
192017
TCAD simulations on CMOS propagation induced pulse broadening effect: Dependence analysis on the threshold voltage
JM Mogollón, FR Palomo, MA Aguirre, J Nápoles, H Guzmán-Miranda, ...
IEEE Transactions on nuclear science 57 (4), 1908-1914, 2010
192010
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