| FeFET-based low-power bitwise logic-in-memory with direct write-back and data-adaptive dynamic sensing interface M Lee, W Tang, B Xue, J Wu, M Ma, Y Wang, Y Liu, D Fan, V Narayanan, ... Proceedings of the ACM/IEEE International Symposium on Low Power Electronics …, 2020 | 21 | 2020 |
| Low-power and scalable retention-enhanced IGZO TFT eDRAM-based charge-domain computing J Liu, C Sun, W Tang, Z Zheng, Y Liu, H Yang, C Jiang, K Ni, X Gong, X Li 2021 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2021 | 20 | 2021 |
| Almost-nonvolatile IGZO-TFT-based near-sensor in-memory computing J Liu, W Tang, Y Liu, H Yang, X Li 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2021 | 13 | 2021 |
| Computing-in-memory with thin-film transistors: challenges and opportunities W Tang, J Liu, H Li, D Chen, C Jiang, X Li, H Yang Flexible and Printed Electronics 7 (2), 024001, 2022 | 8 | 2022 |
| SAMBA: Single-ADC multi-bit accumulation compute-in-memory using nonlinearity-compensated fully parallel analog adder tree Y Chen, G Yin, M Zhou, W Tang, Z Yang, M Lee, X Du, J Yue, J Liu, ... IEEE Transactions on Circuits and Systems I: Regular Papers 70 (7), 2762-2773, 2023 | 6 | 2023 |
| A 66.67kHz 4.953 nJ/Conv-Step 5b Fully Integrated Asynchronous SAR ADC Using LTPS TFTs H Li, J Liu, W Tang, H Yang, C Jiang, S Zhang, X Li 2023 IEEE International Flexible Electronics Technology Conference (IFETC), 1-3, 2023 | 3 | 2023 |
| FeFET-based logic-in-memory supporting SA-free write-back and fully dynamic access with reduced bitline charging activity and recycled bitline charge W Tang, M Lee, J Wu, Y Xu, Y Yu, Y Liu, K Ni, Y Wang, H Yang, ... IEEE Transactions on Circuits and Systems I: Regular Papers 70 (6), 2398-2411, 2023 | 3 | 2023 |
| Low-power and scalable BEOL-compatible IGZO TFT eDRAM-based charge-domain computing W Tang, J Liu, C Sun, Z Zheng, Y Liu, H Yang, C Jiang, K Ni, X Gong, X Li IEEE Transactions on Circuits and Systems I: Regular Papers, 2023 | 2 | 2023 |
| Hidden-ROM: A compute-in-ROM architecture to deploy large-scale neural networks on chip with flexible and scalable post-fabrication task transfer capability Y Chen, G Yin, M Lee, W Tang, Z Yang, Y Liu, H Yang, X Li Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided …, 2022 | 2 | 2022 |
| TFT-Based Near-Sensor In-Memory Computing: Circuits and Architecture Perspectives of Large-Area eDRAM and ROM CiM Chips J Liu, W Tang, H Li, D Chen, W Long, Y Liu, C Jiang, H Yang, X Li IEEE Transactions on Circuits and Systems I: Regular Papers, 2023 | 1 | 2023 |
| Victor: A variation-resilient approach using cell-clustered charge-domain computing for high-density high-throughput MLC CiM M Lee, W Tang, Y Chen, J Wu, H Zhong, Y Xu, Y Liu, H Yang, ... 2023 60th ACM/IEEE Design Automation Conference (DAC), 1-6, 2023 | 1 | 2023 |
| A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface G Yin, M Zhou, Y Chen, W Tang, Z Yang, M Lee, X Du, J Yue, J Liu, ... arXiv preprint arXiv:2212.04320, 2022 | 1 | 2022 |
| High-density energy-efficient charge-domain computing based on CAA-IGZO TFT with BEOL-compatible 3D integration W Tang, J Liu, H Yang, C Jiang, X Li 2022 IEEE International Flexible Electronics Technology Conference (IFETC), 1-2, 2022 | 1 | 2022 |
| Devices, chips, and electronic equipment for sensing-memory-computing synergy W Tang, X Li, W Long, J Liu, Y Zhong, C Jiang, H Yang US Patent App. 18/521,746, 2024 | | 2024 |
| A 28nm 8928Kb/mm2-Weight-Density Hybrid SRAM/ROM Compute-in-Memory Architecture Reducing >95% Weight Loading from DRAM G Yin, Y Chen, M Lee, X Du, Y Ke, W Tang, Z Chen, M Zhou, J Yue, ... 2024 IEEE Custom Integrated Circuits Conference (CICC), 1-2, 2024 | | 2024 |
| Compute-in-memory devices, neural network accelerators, and electronic devices X Li, G Yin, Y Chen, L Cheong, L Tianyu, W Tang, LEE Mingyen, DU Xirui, ... US Patent App. 18/342,917, 2024 | | 2024 |
| 30 Mb/mm2/layer 3D eDRAM Computing-in-Memory with Embedded BEOL Peripherals and Local Layer-wise Calibration based on First-Demonstrated Vertically-stacked CAA … W Tang, C Chen, J Liu, C Zhang, C Gu, X Duan, H Yang, L Li, X Li, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| Cramming More Weight Data Onto Compute-in-Memory Macros for High Task-Level Energy Efficiency Using Custom ROM With 3984-kb/mm Density in 65-nm … G Yin, Y Chen, M Zhou, W Tang, M Lee, Z Yang, T Liao, X Du, ... IEEE Journal of Solid-State Circuits, 2023 | | 2023 |
Xueqing LiAssociate Professor, Tsinghua University在 tsinghua.edu.cn 的电子邮件经过验证
