| Tunneling Transistors based on MoS2/MoTe2 Van der Waals Heterostructures Y Balaji, Q Smets, CJL de la Rosa, AKA Lu, D Chiappe, T Agarwal, D Lin, ... IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018 | 46 | 2018 |
| Topological to trivial insulating phase transition in stanene M Houssa, B van den Broek, K Iordanidou, AKA Lu, G Pourtois, ... Nano Research 9, 774-778, 2016 | 41 | 2016 |
| Towards an understanding of the electric field-induced electrostatic doping in Van der Waals heterostructures: a first-principles study. AKA Lu, M Houssa, IP Radu, G Pourtois ACS applied materials & interfaces, 2017 | 27 | 2017 |
| Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ... ACS Applied Nano Materials 2 (2), 760-766, 2019 | 26 | 2019 |
| On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study AKA Lu, G Pourtois, M Luisier, IP Radu, M Houssa Journal of Applied Physics 121 (4), 2017 | 26 | 2017 |
| A systematic study of various 2D materials in the light of defect formation and oxidation A Dabral, AKA Lu, D Chiappe, M Houssa, G Pourtois Physical Chemistry Chemical Physics 21 (3), 1089-1099, 2019 | 22 | 2019 |
| The Role of Nonidealities in the Scaling of MoS2 FETs D Verreck, G Arutchelvan, CJL De La Rosa, A Leonhardt, D Chiappe, ... IEEE Transactions on Electron Devices 65 (10), 4635-4640, 2018 | 21 | 2018 |
| Impact of Layer Alignment on the Behavior of Tunnel Field-Effect Transistors: An Ab Initio Study AKA Lu, M Houssa, M Luisier, G Pourtois Physical Review Applied 8 (3), 034017, 2017 | 19 | 2017 |
| Two-dimensional material semiconductor device G Pourtois, AK Lu, C Huyghebaert US Patent 9,899,501, 2018 | 17 | 2018 |
| Contact resistance at graphene/MoS2 lateral heterostructures M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ... Applied Physics Letters 114 (16), 2019 | 16 | 2019 |
| Large-scale 1T′-phase tungsten disulfide atomic layers grown by gas-source chemical vapor deposition M Okada, J Pu, YC Lin, T Endo, N Okada, WH Chang, AKA Lu, ... ACS nano 16 (8), 13069-13081, 2022 | 15 | 2022 |
| Study of the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ... ECS Journal of Solid State Science and Technology 7 (6), N73-N80, 2018 | 15 | 2018 |
| Shear-induced chemical segregation in a Fe-based bulk metallic glass at room temperature DV Louzguine-Luzgin, AS Trifonov, YP Ivanov, AKA Lu, AV Lubenchenko, ... Scientific Reports 11 (1), 13650, 2021 | 13 | 2021 |
| Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport B van den Broek, M Houssa, A Lu, G Pourtois, V Afanas’ev, A Stesmans Nano Research, 1-13, 2016 | 12 | 2016 |
| Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping M Okada, N Nagamura, T Matsumura, Y Ando, AKA Lu, N Okada, ... APL Materials 9 (12), 2021 | 11 | 2021 |
| Interaction of silicene and germanene with non-metallic substrates M Houssa, E Scalise, B Van den Broek, A Lu, G Pourtois, VV Afanas' Ev, ... ECS Transactions 64 (8), 111, 2014 | 11 | 2014 |
| Entropy-driven docosahedral short-range order in simple liquids and glasses K Nishio, AKA Lu, T Miyazaki Phys. Rev. E 99, 022121, 2019 | 10 | 2019 |
| Uncovering New Buckled Structures of Bilayer GaN: A First-Principles Study AKA Lu, T Yayama, T Morishita, MJS Spencer, T Nakanishi J. Phys. Chem. C, 2018 | 10 | 2018 |
| Crystal nucleation and growth processes in Cu-rich glass-forming Cu–Zr alloys AKA Lu, DV Louzguine-Luzgin The Journal of Chemical Physics 157 (1), 2022 | 8 | 2022 |
| Universal short-range order and material dependent glass-forming ability of metallic liquids and glasses K Nishio, AKA Lu, T Miyazaki Physical Review Research 1 (1), 012013, 2019 | 7 | 2019 |
geoffrey pourtoisimec在 imec.be 的电子邮件经过验证
