| Spin torque switching of perpendicular Ta∣ CoFeB∣ MgO-based magnetic tunnel junctions DC Worledge, G Hu, DW Abraham, JZ Sun, PL Trouilloud, J Nowak, ... Applied physics letters 98 (2), 2011 | 830 | 2011 |
| Magnetic multilayers on nanospheres M Albrecht, G Hu, IL Guhr, TC Ulbrich, J Boneberg, P Leiderer, G Schatz Nature Materials 4 (3), 203-206, 2005 | 433 | 2005 |
| Intrinsic distribution of magnetic anisotropy in thin films probed by patterned nanostructures T Thomson, G Hu, BD Terris Physical Review Letters 96 (25), 257204, 2006 | 379 | 2006 |
| Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy M Gajek, JJ Nowak, JZ Sun, PL Trouilloud, EJ O’Sullivan, DW Abraham, ... Applied Physics Letters 100 (13), 2012 | 356 | 2012 |
| Negative Spin Polarization of in Magnetite/Manganite-Based Junctions G Hu, Y Suzuki Physical review letters 89 (27), 276601, 2002 | 326 | 2002 |
| Effect of subvolume excitation and spin-torque efficiency on magnetic switching JZ Sun, RP Robertazzi, J Nowak, PL Trouilloud, G Hu, DW Abraham, ... Physical Review B—Condensed Matter and Materials Physics 84 (6), 064413, 2011 | 197 | 2011 |
| Patterned media for future magnetic data storage BD Terris, T Thomson, G Hu Microsystem technologies 13, 189-196, 2007 | 197 | 2007 |
| Dependence of voltage and size on write error rates in spin-transfer torque magnetic random-access memory JJ Nowak, RP Robertazzi, JZ Sun, G Hu, JH Park, JH Lee, AJ Annunziata, ... IEEE Magnetics Letters 7, 1-4, 2016 | 169 | 2016 |
| Magnetization reversal in a novel gradient nanomaterial TC Ulbrich, D Makarov, G Hu, IL Guhr, D Suess, T Schrefl, M Albrecht Physical review letters 96 (7), 077202, 2006 | 126 | 2006 |
| Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions JZ Sun, SL Brown, W Chen, EA Delenia, MC Gaidis, J Harms, G Hu, ... Physical Review B—Condensed Matter and Materials Physics 88 (10), 104426, 2013 | 120 | 2013 |
| Magnetic dot arrays with multiple storage layers M Albrecht, G Hu, A Moser, O Hellwig, BD Terris Journal of Applied Physics 97 (10), 2005 | 112 | 2005 |
| Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy JJ Nowak, RP Robertazzi, JZ Sun, G Hu, DW Abraham, PL Trouilloud, ... IEEE Magnetics Letters 2, 3000204-3000204, 2011 | 106 | 2011 |
| STT-MRAM with double magnetic tunnel junctions G Hu, JH Lee, JJ Nowak, JZ Sun, J Harms, A Annunziata, S Brown, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2015 | 96 | 2015 |
| Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory G Hu, JJ Nowak, PL Troilloud, DC Worledge US Patent App. 13/093,287, 2012 | 93 | 2012 |
| A three-terminal spin-torque-driven magnetic switch JZ Sun, MC Gaidis, EJ O’Sullivan, EA Joseph, G Hu, DW Abraham, ... Applied physics letters 95 (8), 2009 | 91 | 2009 |
| High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions JZ Sun, MC Gaidis, G Hu, EJ O’Sullivan, SL Brown, JJ Nowak, ... Journal of Applied Physics 105 (7), 2009 | 89 | 2009 |
| Demonstration of nanosecond operation in stochastic magnetic tunnel junctions C Safranski, J Kaiser, P Trouilloud, P Hashemi, G Hu, JZ Sun Nano letters 21 (5), 2040-2045, 2021 | 85 | 2021 |
| Switching distributions and write reliability of perpendicular spin torque MRAM DC Worledge, G Hu, PL Trouilloud, DW Abraham, S Brown, MC Gaidis, ... 2010 International Electron Devices Meeting, 12.5. 1-12.5. 4, 2010 | 85 | 2010 |
| Patterned multilevel perpendicular magnetic recording media M Albrecht, O Hellwig, G Hu, BD Terris US Patent 6,947,235, 2005 | 69 | 2005 |
| Magnetization reversal in Co∕ Pd nanostructures and films G Hu, T Thomson, CT Rettner, S Raoux, BD Terris Journal of applied physics 97 (10), 2005 | 69 | 2005 |
