| Investigation of longitudinal-optical phonon-plasmon coupled modes in SiC epitaxial film using fourier transform infrared reflection S Sunkari, MS Mazzola, JP Mazzola, H Das, JL Wyatt Journal of electronic materials 34 (4), 320-323, 2005 | 22 | 2005 |
| Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance H Das, S Sunkari, J Justice, H Pham, G Park, YH Seo Materials Science Forum 1004, 458-463, 2020 | 19 | 2020 |
| Effect of Defects in Silicon Carbide Epitaxial layers on Yield and Reliability H Das, S Sunkari, J Justice, H Pham, KS Park Materials Science Forum 963, 284-287, 2019 | 16 | 2019 |
| Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC H Das, G Melnychuk, Y Koshka Journal of Crystal Growth 312 (12-13), 1912-1919, 2010 | 15 | 2010 |
| Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth B Krishnan, SP Kotamraju, G Melnychuk, H Das, JN Merrett, Y Koshka Journal of electronic materials 39 (1), 34-38, 2010 | 12 | 2010 |
| METHODS FOR THE EPITAXIAL GROWTH OF SILICON CARBIDE H DAS, S SUNKARI, T OLDHAM, JB CASADY WO Patent 2,013,036,376, 2013 | 10* | 2013 |
| METHODS FOR THE EPITAXIAL GROWTH OF SILICON CARBIDE H Das, S Sunkari, T Oldham, JB Casady US Patent 20,130,062,628, 2013 | 10* | 2013 |
| Selective epitaxial growth of at reduced temperatures using halo-carbon precursor B Krishnan, H Das, HD Lin, Y Koshka Applied physics letters 89 (26), 262103, 2006 | 10 | 2006 |
| Evolution of lattice distortions in 4H-SiC wafers with varying doping NA Mahadik, H Das, S Stoupin, RE Stahlbush, PL Bonanno, X Xu, ... Scientific Reports 10 (1), 1-9, 2020 | 9 | 2020 |
| Avalanche rugged 1200 V 80 m Ω SiC MOSFETs with state-of-the-art threshold voltage stability M Domeij, J Franchi, B Buono, K Lee, KS Park, CS Choi, S Sunkari, H Das 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 8 | 2018 |
| High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC H Das, SG Sunkari, T Oldham, JRB Casady, JB Casady Materials Science Forum 717, 93-96, 2012 | 8 | 2012 |
| Detection of crystal defects in high doped epitaxial layers and substrates by photoluminescence H Das, S Sunkari, H Naas, M Domeij, A Konstantinov, F Allerstam, ... Materials Science Forum 897, 222-225, 2017 | 7 | 2017 |
| Classification of Killer and Non-Killer Silicon Carbide Epitaxial Defects and Accurate Prediction of Device Yield H Das, S Sunkari, H Naas ECS Meeting Abstracts, 1345, 2017 | 6 | 2017 |
| Classification of Killer and Non-Killer Silicon Carbide Epitaxial Defects and Accurate Prediction of Device Yield H Das, S Sunkari, H Naas ECS Transactions 80 (7), 239-243, 2017 | 6 | 2017 |
| The creation of boron deep levels by high-temperature annealing of 4H-silicon carbide H Das MISSISSIPPI STATE UNIVERSITY, 2005 | 5 | 2005 |
| The Creation of Boron Deep Levels by High Temperature Annealing of 4H-SiC H Das Mississippi State University, 2004 | 5 | 2004 |
| (Invited) Enabling SiC Yield and Reliability through Epitaxy and Characterization H Das, S Sunkari, M Domeij, A Konstantinov, F Allerstam, T Neyer ECS Transactions 69 (11), 29-32, 2015 | 4 | 2015 |
| Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance H Das, S Sunkari, T Oldham, J Rodgers, J Casady Materials Science Forum 740, 221-224, 2013 | 4 | 2013 |
| Dislocations and Triangular Defect in Low-temperature Halo-carbon Epitaxial Growth and Selective Epitaxial Growth H Das, G Melnychuk, Y Koshka Materials Science Forum 615, 121-124, 2009 | 3 | 2009 |
| Local-loading Effect in Low-temperature Selective Epitaxial Growth of 4H-SiC by Halo-carbon Method H Das, B Krishnan, G Melnychuk, Y Koshka Materials Science Forum 600, 163-166, 2009 | 3 | 2009 |
