| Radiation-induced edge effects in deep submicron CMOS transistors F Faccio, G Cervelli IEEE Trans. Nucl. Sci. 52, 2413-2420, 2005 | 517 | 2005 |
| Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects G Anelli, M Campbell, M Delmastro, F Faccio, S Floria, A Giraldo, E Heijne, ... IEEE Transactions on Nuclear Science 46 (6), 1690-1696, 1999 | 479 | 1999 |
| Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip W Snoeys, F Faccio, M Burns, M Campbell, E Cantatore, N Carrer, ... Nuclear Instruments and Methods in Physics Research Section A: accelerators …, 2000 | 244 | 2000 |
| The GBT project P Moreira, K Wyllie, B Yu, A Marchioro, C Paillard, K Kloukinas, T Fedorov, ... CERN, 2009 | 235 | 2009 |
| Radiation-induced short channel (RISCE) and narrow channel (RINCE) effects in 65 and 130 nm MOSFETs F Faccio, S Michelis, D Cornale, A Paccagnella, S Gerardin IEEE Transactions on Nuclear Science 62 (6), 2933-2940, 2015 | 213 | 2015 |
| Computational method to estimate Single Event Upset rates in an accelerator environment M Huhtinen, F Faccio Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2000 | 203 | 2000 |
| Total ionizing dose effects in 130-nm commercial CMOS technologies for HEP experiments L Gonella, F Faccio, M Silvestri, S Gerardin, D Pantano, V Re, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007 | 145 | 2007 |
| Total ionizing dose effects in shallow trench isolation oxides F Faccio, HJ Barnaby, XJ Chen, DM Fleetwood, L Gonella, M McLain, ... Microelectronics Reliability 48 (7), 1000-1007, 2008 | 113 | 2008 |
| Influence of LDD spacers and H+ transport on the total-ionizing-dose response of 65 nm MOSFETs irradiated to ultra-high doses F Faccio, G Borghello, E Lerario, DM Fleetwood, RD Schrimpf, H Gong, ... IEEE Trans. Nucl. Sci. 65 (1), 164-174, 2018 | 110 | 2018 |
| Optical readout and control systems for the CMS tracker J Troska, G Cervelli, F Faccio, K Gill, R Grabit, AM Sandvik, F Vasey, ... Nuclear Science Symposium Conference Record, 2002 IEEE 1, 233-237, 2002 | 96 | 2002 |
| The GBT-SerDes ASIC prototype P Moreira, S Baron, S Bonacini, O Cobanoglu, F Faccio, S Feger, ... Journal of Instrumentation 5 (11), C11022, 2010 | 94 | 2010 |
| Characterization of a commercial 65 nm CMOS technology for SLHC applications S Bonacini, P Valerio, R Avramidou, R Ballabriga, F Faccio, K Kloukinas, ... Journal of Instrumentation 7 (01), P01015, 2012 | 88 | 2012 |
| A radiation tolerant gigabit serializer for LHC data transmission P Moreira, A Marchioro, JP Cachemiche, TH Toifl, F Faccio, G Cervelli, ... Cern, 2001 | 88 | 2001 |
| Optimization of shielded PCB air-core toroids for high-efficiency DC–DC converters S Orlandi, BA Allongue, G Blanchot, S Buso, F Faccio, CA Fuentes, ... IEEE Transactions on Power Electronics 26 (7), 1837-1846, 2011 | 87 | 2011 |
| TID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC-DC converters F Faccio, B Allongue, G Blanchot, C Fuentes, S Michelis, S Orlandi, ... Radiation and Its Effects on Components and Systems (RADECS), 2009 European …, 2009 | 87 | 2009 |
| Noise characterization of a 0.25 μm CMOS technology for the LHC experiments G Anelli, F Faccio, S Florian, P Jarron Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2001 | 79 | 2001 |
| Deep submicron CMOS technologies for the LHC experiments P Jarron, G Anelli, T Calin, J Cosculluela, M Campbell, M Delmastro, ... Nuclear Physics B-Proceedings Supplements 78 (1-3), 625-634, 1999 | 78 | 1999 |
| Single event effects in static and dynamic registers in a 0.25/spl mu/m CMOS technology F Faccio, K Kloukinas, A Marchioro, T Calin, J Cosculluela, M Nicolaidis, ... IEEE Transactions on Nuclear Science 46 (6), 1434-1439, 1999 | 74 | 1999 |
| A pixel readout chip for 10-30 MRad in standard 0.25/spl mu/m CMOS M Campbell, G Anelli, M Burns, E Cantatore, L Casagrande, M Delmastro, ... IEEE Transactions on Nuclear Science 46 (3), 156-160, 1999 | 73 | 1999 |
| Total dose and single event effects (SEE) in a 0.25 m CMOS technology F Faccio, G Anelli, M Campbell, M Delmastro, P Jarron, K Kloukinas, ... Proc. 4th Workshop Electronics for LHC Experiments, 98-36, 1998 | 73 | 1998 |
