| A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction JMT Vasquez, A Ashai, Y Lu, V Khandelwal, M Rajbhar, M Kumar, X Li, ... Journal of Physics D: Applied Physics 56 (6), 065104, 2023 | 15 | 2023 |
| Natural Boron and 10B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal–Semiconductor–Metal Neutron Detectors A Mballo, A Ahaitouf, S Sundaram, A Srivastava, V Ottapilakkal, R Gujrati, ... ACS omega 7 (1), 804-809, 2021 | 9 | 2021 |
| Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation Y Lu, S Krishna, CH Liao, Z Yang, M Kumar, Z Liu, X Tang, N Xiao, ... ACS Applied Materials & Interfaces 14 (42), 47922-47930, 2022 | 5 | 2022 |
| Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors S Yuvaraja, V Khandelwal, S Krishna, Y Lu, Z Liu, M Kumar, X Tang, ... ACS Applied Materials & Interfaces 16 (5), 6088-6097, 2024 | 4 | 2024 |
| Three-dimensional integrated metal-oxide transistors S Yuvaraja, H Faber, M Kumar, N Xiao, GI Maciel García, X Tang, ... Nature Electronics, 1-9, 2024 | 1 | 2024 |
| Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics M Kumar, S Yuvaraja, N Xiao, MK Rajbhar, G Mainali, V Khandelwal, ... Applied Physics Letters 124 (11), 2024 | 1 | 2024 |
| Advancing Neutron Detection: Fabrication, Characterization, and Performance Evaluation of Self‐Powered PIN BGaN/GaN Superlattice‐Based Neutron Detectors A Srivastava, A Mballo, S Sundaram, V Ottapilakkal, P Vuong, ... physica status solidi (a), 2400074, 2024 | | 2024 |
| Demonstration of Ga2O3 trigate transistors on (100) silicon substrates S Yuvaraja, V Khandelwal, S Krishna, Y Lu, Z Liu, M Kumar, D Chettri, ... 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022 | | 2022 |
