| A 3.1 mW 8b 1.2 GS/s single-channel asynchronous SAR ADC with alternate comparators for enhanced speed in 32 nm digital SOI CMOS L Kull, T Toifl, M Schmatz, PA Francese, C Menolfi, M Braendli, M Kossel, ... IEEE Journal of Solid-State Circuits 48 (12), 3049-3058, 2013 | 406 | 2013 |
| A 28-Gb/s 4-tap FFE/15-tap DFE serial link transceiver in 32-nm SOI CMOS technology JF Bulzacchelli, C Menolfi, TJ Beukema, DW Storaska, J Hertle, ... IEEE Journal of Solid-State Circuits 47 (12), 3232-3248, 2012 | 243 | 2012 |
| 22.1 a 90gs/s 8b 667mw 64× interleaved sar adc in 32nm digital soi cmos L Kull, T Toifl, M Schmatz, PA Francese, C Menolfi, M Braendli, M Kossel, ... 2014 IEEE International Solid-State Circuits Conference Digest of Technical …, 2014 | 221 | 2014 |
| Polymer-waveguide-based board-level optical interconnect technology for datacom applications R Dangel, C Berger, RÉ Beyeler, L Dellmann, M Gmur, RÉ Hamelin, ... IEEE Transactions on Advanced Packaging 31 (4), 759-767, 2008 | 216 | 2008 |
| A low-power 20-GHz 52-dB/spl Omega/transimpedance amplifier in 80-nm CMOS C Kromer, G Sialm, T Morf, ML Schmatz, F Ellinger, D Erni, H Jackel IEEE Journal of Solid-State Circuits 39 (6), 885-894, 2004 | 214 | 2004 |
| A T-Coil-Enhanced 8.5 Gb/s High-Swing SST Transmitter in 65 nm Bulk CMOS With 16 dB Return Loss Over 10 GHz Bandwidth M Kossel, C Menolfi, J Weiss, P Buchmann, G Von Bueren, L Rodoni, ... IEEE Journal of Solid-State Circuits 43 (12), 2905-2920, 2008 | 188 | 2008 |
| A 100-mW 4/spl times/10 Gb/s transceiver in 80-nm CMOS for high-density optical interconnects C Kromer, G Sialm, C Berger, T Morf, ML Schmatz, F Ellinger, D Erni, ... IEEE Journal of Solid-State Circuits 40 (12), 2667-2679, 2005 | 173 | 2005 |
| A 22-Gb/s PAM-4 receiver in 90-nm CMOS SOI technology T Toifl, C Menolfi, M Ruegg, R Reutemann, P Buchmann, M Kossel, ... IEEE Journal of Solid-State Circuits 41 (4), 954-965, 2006 | 137 | 2006 |
| A 24–72-GS/s 8-b time-interleaved SAR ADC with 2.0–3.3-pJ/conversion and> 30 dB SNDR at Nyquist in 14-nm CMOS FinFET L Kull, D Luu, C Menolfi, M Braendli, PA Francese, T Morf, M Kossel, ... IEEE Journal of Solid-State Circuits 53 (12), 3508-3516, 2018 | 136 | 2018 |
| High-density optical interconnects within large-scale systems C Berger, MA Kossel, C Menolfi, T Morf, T Toifl, ML Schmatz VCSELs and Optical Interconnects 4942, 222-235, 2003 | 113 | 2003 |
| InP-InGaAs single HBT technology for photoreceiver OEIC's at 40 Gb/s and beyond D Huber, R Bauknecht, C Bergamaschi, M Bitter, A Huber, T Morf, ... Journal of lightwave technology 18 (7), 992, 2000 | 111 | 2000 |
| A 16Gb/s source-series terminated transmitter in 65nm CMOS SOI C Menolfi, T Toifl, P Buchmann, M Kossel, T Morf, J Weiss, M Schmatz 2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007 | 108 | 2007 |
| 28.5 A 10b 1.5 GS/s pipelined-SAR ADC with background second-stage common-mode regulation and offset calibration in 14nm CMOS FinFET L Kull, D Luu, C Menolfi, M Braendli, PA Francese, T Morf, M Kossel, ... 2017 IEEE International Solid-State Circuits Conference (ISSCC), 474-475, 2017 | 103 | 2017 |
| A 4.6W/mm2power density 86% efficiency on-chip switched capacitor DC-DC converter in 32 nm SOI CMOS TM Andersen, F Krismer, JW Kolar, T Toifl, C Menolfi, L Kull, T Morf, ... 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and …, 2013 | 101 | 2013 |
| 60 GHz VCO with wideband tuning range fabricated on VLSI SOI CMOS technology F Ellinger, T Morf, G Buren, C Kromer, G Sialm, L Rodoni, M Schmatz, ... 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No …, 2004 | 99 | 2004 |
| Implementation of low-power 6–8 b 30–90 GS/s time-interleaved ADCs with optimized input bandwidth in 32 nm CMOS L Kull, J Pliva, T Toifl, M Schmatz, PA Francese, C Menolfi, M Braendli, ... IEEE Journal of Solid-State Circuits 51 (3), 636-648, 2016 | 93 | 2016 |
| A sub-ns response on-chip switched-capacitor DC-DC voltage regulator delivering 3.7 W/mm2 at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS TM Andersen, F Krismer, JW Kolar, T Toifl, C Menolfi, L Kull, T Morf, ... IEEE International Solid-State Circuits Conference, 2014 | 91 | 2014 |
| 30-40-GHz drain-pumped passive-mixer MMIC fabricated on VLSI SOI CMOS technology F Ellinger, LC Rodoni, G Sialm, C Kromer, G von Buren, ML Schmatz, ... IEEE transactions on microwave theory and techniques 52 (5), 1382-1391, 2004 | 90 | 2004 |
| A 0.94-ps-RMS-jitter 0.016-mm/sup 2/2.5-GHz multiphase generator PLL with 360/spl deg/digitally programmable phase shift for 10-Gb/s serial links T Toifl, C Menolfi, P Buchmann, M Kossel, T Morf, R Reutemann, ... IEEE journal of solid-state circuits 40 (12), 2700-2712, 2005 | 86 | 2005 |
| A 2.6 mW/Gbps 12.5 Gbps RX with 8-tap switched-capacitor DFE in 32 nm CMOS T Toifl, C Menolfi, M Ruegg, R Reutemann, D Dreps, T Beukema, A Prati, ... IEEE Journal of Solid-State Circuits 47 (4), 897-910, 2012 | 84 | 2012 |
Marcel KosselIBM Research在 zurich.ibm.com 的电子邮件经过验证
