| AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz S Bouzid-Driad, H Maher, N Defrance, V Hoel, JC De Jaeger, M Renvoise, ... IEEE Electron Device Letters 34 (1), 36-38, 2012 | 133 | 2012 |
| Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High di/dt Applications A Letellier, MR Dubois, JPF Trovao, H Maher IEEE Transactions on Power Electronics 34 (1), 612-623, 2018 | 63 | 2018 |
| Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors H Maher, DW DiSanto, G Soerensen, CR Bolognesi, H Tang, JB Webb Applied Physics Letters 77 (23), 3833-3835, 2000 | 48 | 2000 |
| Gallium nitride semiconductors in power electronics for electric vehicles: Advantages and challenges A Letellier, MR Dubois, JP Trovao, H Maher 2015 IEEE vehicle power and propulsion conference (VPPC), 1-6, 2015 | 44 | 2015 |
| Optimized pre-treatment process for MOS-GaN devices passivation A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad IEEE Electron Device Letters 35 (3), 318-320, 2014 | 37 | 2014 |
| Normally‐off AlGaN/GaN MOS‐HEMT using ultra‐thin Al0.45Ga0.55N barrier layer A Chakroun, A Jaouad, M Bouchilaoun, O Arenas, A Soltani, H Maher physica status solidi (a) 214 (8), 1600836, 2017 | 31 | 2017 |
| Electrothermal mapping of AlGaN/GaN HEMTs using microresistance thermometer detectors O Arenas, É Al Alam, V Aimez, A Jaouad, H Maher, R Ares, F Boone IEEE Electron Device Letters 36 (2), 111-113, 2014 | 29 | 2014 |
| A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications H Maher, J Décobert, A Falcou, M Le Pallec, G Post, YI Nissim, ... IEEE Transactions on Electron Devices 46 (1), 32-37, 1999 | 27 | 1999 |
| AlGaN/GaN MOS-HEMT device fabricated using a high quality PECVD passivation process A Chakroun, A Jaouad, A Soltani, O Arenas, V Aimez, R Arès, H Maher IEEE Electron Device Letters 38 (6), 779-782, 2017 | 26 | 2017 |
| Characterization of dynamic self-heating in GaN HEMTs using gate resistance measurement A Cutivet, F Cozette, M Bouchilaoun, A Chakroun, O Arenas, M Lesecq, ... IEEE Electron Device Letters 38 (2), 240-243, 2016 | 24 | 2016 |
| Integration of micro resistance thermometer detectors in AlGaN/GaN devices O Arenas, É Al Alam, A Thevenot, Y Cordier, A Jaouad, V Aimez, H Maher, ... IEEE Journal of the Electron Devices Society 2 (6), 145-148, 2014 | 20 | 2014 |
| Design method of PCB inductors for high-frequency GaN converters A Chafi, N Idir, A Videt, H Maher IEEE Transactions on Power Electronics 36 (1), 805-814, 2020 | 19 | 2020 |
| Room-temperature AlGaN/GaN terahertz plasmonic detectors with a zero-bias grating H Spisser, AS Grimault-Jacquin, N Zerounian, A Aassime, L Cao, F Boone, ... Journal of Infrared, Millimeter, and Terahertz Waves 37, 243-257, 2016 | 19 | 2016 |
| Characterization of m-GaN and a-GaN crystallographic planes after being chemically etched in TMAH solution N Al Taradeh, E Frayssinet, C Rodriguez, F Morancho, C Sonneville, ... Energies 14 (14), 4241, 2021 | 18 | 2021 |
| High transconductance AlGaN/GaN HEMT with thin barrier on Si (111) substrate F Lecourt, Y Douvry, N Defrance, V Hoel, JC De Jaeger, S Bouzid, ... 2010 Proceedings of the European Solid State Device Research Conference, 281-284, 2010 | 18 | 2010 |
| Enhancement-depletion semiconductor structure and method for making it H Maher, P Baudet US Patent App. 11/722,208, 2009 | 15 | 2009 |
| A 200-GHz true E-mode low-noise MHEMT H Maher, I El Makoudi, P Frijlink, D Smith, M Rocchi, S Bollaert, S Lepilliet, ... IEEE transactions on electron devices 54 (7), 1626-1632, 2007 | 15 | 2007 |
| Inductively coupled plasma—plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs) M Medjdoub, JL Courant, H Maher, G Post Materials Science and Engineering: B 80 (1-3), 252-256, 2001 | 14 | 2001 |
| Active gate driver and management of the switching speed of GaN transistors during turn-on and turn-off ML Beye, T Wickramasinghe, JF Mogniotte, LV Phung, N Idir, H Maher, ... Electronics 10 (2), 106, 2021 | 13 | 2021 |
| Scalable modeling of transient self-heating of GaN high-electron-mobility transistors based on experimental measurements A Cutivet, G Pavlidis, B Hassan, M Bouchilaoun, C Rodriguez, A Soltani, ... IEEE Transactions on Electron Devices 66 (5), 2139-2145, 2019 | 13 | 2019 |
Soltani AliAssociate professor在 univ-lille.fr 的电子邮件经过验证
