| A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs S Sarangi, S Bhushan, A Santra, S Dubey, S Jit, PK Tiwari Superlattices and Microstructures 60, 263-279, 2013 | 25 | 2013 |
| An analytical surface potential modeling of fully-depleted symmetrical double-gate (DG) strained-Si MOSFETs including the effect of interface charges S Sarangi, A Santra, S Bhushan, KS Gopi, S Dubey, PK Tiwari 2013 Students Conference on Engineering and Systems (SCES), 1-5, 2013 | 14 | 2013 |
| An analytical model for the threshold voltage of short- channel double-material-gate (DMG) MOSFETs with a strained-silicon (s-Si) channel on silicon-germanium (SiGe) substrates S Bhushan, S Sarangi, S Gopi Krishna, A Santra, S Dubey, PK Tiwari Journal of Semiconductor Technology and Science 13 (4), 367-380, 2013 | 8 | 2013 |
| An analytical surface potential model of strained-si on silicongermanium MOSFET including the effects of interface charge S Bhushan, S Sarangi, A Santra, M Kumar, S Dubey, S Jit, PK Tiwari Journal of Electron Device 15, 1285-1290, 2012 | 7 | 2012 |
| A simulation-based study of gate misalignment effects in triple-material double-gate (tmdg) mosfets S Sarangi, S Bhushan, SG Krishna, A Santra, PK Tiwari 2013 International Mutli-Conference on Automation, Computing, Communication …, 2013 | 3 | 2013 |
Abirmoya SantraIIT Madras在 smail.iitm.ac.in 的电子邮件经过验证
Abirmoya SantraIIT Madras在 smail.iitm.ac.in 的电子邮件经过验证
Satyabrata JitIndian Institute of Technology (Banaras Hindu University) Varanasi, India在 iitbhu.ac.in 的电子邮件经过验证