CapCAM: A multilevel capacitive content addressable memory for high-accuracy and high-scalability search and compute applications X Ma, H Zhong, N Xiu, Y Chen, G Yin, V Narayanan, Y Liu, K Ni, H Yang, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 30 (11 …, 2022 | 11 | 2022 |
Capacitive content-addressable memory: A highly reliable and scalable approach to energy-efficient parallel pattern matching applications N Xiu, Y Chen, G Yin, X Ma, H Yang, S George, X Li Proceedings of the 2021 on Great Lakes Symposium on VLSI, 479-484, 2021 | 8 | 2021 |
Exploiting FeFET switching stochasticity for low-power reconfigurable physical unclonable function X Guo, X Ma, F Müller, R Olivo, J Wu, K Ni, T Kämpfe, Y Liu, H Yang, X Li ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC …, 2021 | 7 | 2021 |
A 2-transistor-2-capacitor ferroelectric edge compute-in-memory scheme with disturb-free inference and high endurance X Ma, S Deng, J Wu, Z Zhao, D Lehninger, T Ali, K Seidel, S De, X He, ... IEEE Electron Device Letters 44 (7), 1088-1091, 2023 | 3 | 2023 |
Eliminating leakage in volatile memory with anti-ferroelectric transistors H Zhong, Z Zheng, L Jiao, Z Zhou, C Sun, X Ma, V Narayanan, H Yang, ... arXiv preprint arXiv:2212.04973, 2022 | 1 | 2022 |
Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security X Guo, X Ma, F Muller, K Ni, T Kampfe, Y Liu, V Narayanan, X Li arXiv preprint arXiv:2208.14678, 2022 | 1 | 2022 |
First demonstration of reconfigurable and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation X Li, X Guo, T Li, F Müller, S Abdulazhanov, X Ma, H Zhong, Y Liu, ... | | 2024 |
Memory device based on ferroelectric capacitor X Li, X He, X Ma, J Wu, Z Xing, Y Liu, H Yang US Patent 11,769,541, 2023 | | 2023 |
Static random-access memory and electronic device X Li, Y Chen, X Ma, M Zhou, Y Fu, Y Liu, H Yang US Patent 11,475,927, 2022 | | 2022 |