A 68 parallel row access neuromorphic core with 22K multi-level synapses based on logic-compatible embedded flash memory technology M Kim, J Kim, G Park, L Everson, H Kim, S Song, S Lee, CH Kim 2018 IEEE International Electron Devices Meeting (IEDM), 15.4. 1-15.4. 4, 2018 | 26 | 2018 |
Non-volatile memory device for reducing operating time and method of operating the same MS Kim US Patent 8,923,056, 2014 | 25 | 2014 |
A 1-Tb, 4b/cell, 176-stacked-WL 3D-NAND flash memory with improved read latency and a 14.8 Gb/mm2 density W Cho, J Jung, J Kim, J Ham, S Lee, Y Noh, D Kim, W Lee, K Cho, K Kim, ... 2022 IEEE International Solid-State Circuits Conference (ISSCC) 65, 134-135, 2022 | 23 | 2022 |
An embedded NAND flash-based compute-in-memory array demonstrated in a standard logic process M Kim, M Liu, LR Everson, CH Kim IEEE Journal of Solid-State Circuits 57 (2), 625-638, 2021 | 22 | 2021 |
A high performance co-design of 26 nm 64 Gb MLC NAND flash memory using the dedicated NAND flash controller BS You, JS Park, SD Lee, GH Baek, JH Lee, MS Kim, JW Kim, H Chung, ... JSTS: Journal of Semiconductor Technology and Science 11 (2), 121-129, 2011 | 20 | 2011 |
A 3D NAND flash ready 8-bit convolutional neural network core demonstrated in a standard logic process M Kim, M Liu, L Everson, G Park, Y Jeon, S Kim, S Lee, S Song, CH Kim 2019 IEEE International Electron Devices Meeting (IEDM), 38.3. 1-38.3. 4, 2019 | 19 | 2019 |
A 32Gb MLC NAND flash memory with Vth margin-expanding schemes in 26nm CMOS T Kim, SD Lee, J Park, H Cho, B You, K Baek, J Lee, C Yang, M Yun, ... 2011 IEEE International Solid-State Circuits Conference, 202-204, 2011 | 16 | 2011 |
Reliability characterization of logic-compatible NAND flash memory based synapses with 3-bit per cell weights and 1μa current steps M Kim, J Song, CH Kim 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 9 | 2020 |
An all BTI (N-PBTI, N-NBTI, P-PBTI, P-NBTI) odometer based on a dual power rail ring oscillator array G Park, H Yu, M Kim, CH Kim 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 7 | 2021 |
Semiconductor memory apparatus with main memory blocks and redundant memory blocks sharing a common global data line MS Kim US Patent 9,224,445, 2015 | 7 | 2015 |
A 64Gb NAND Flash Memory with 800MB/s Synchronous DDR Interface H Huh, CW Jeon, CW Yang, JS Park, TH Kwon, TK Kang, CW Yang, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 5 | 2012 |
A counter based ADC non-linearity measurement circuit and its application to reliability testing G Park, M Kim, N Pande, PW Chiu, J Song, CH Kim 2019 IEEE Custom Integrated Circuits Conference (CICC), 1-4, 2019 | 4 | 2019 |
Mapim: Mat parallelism for high performance processing in non-volatile memory architecture J Sim, M Kim, Y Kim, S Gupta, B Khaleghi, T Rosing 20th International Symposium on Quality Electronic Design (ISQED), 145-150, 2019 | 4 | 2019 |
All-digital PLL frequency and phase noise degradation measurements using simple on-chip monitoring circuits G Park, M Kim, CH Kim, B Kim, V Reddy 2018 IEEE International Reliability Physics Symposium (IRPS), 5C. 2-1-5C. 2-6, 2018 | 3 | 2018 |
Semiconductor memory device and method of operating the same MS Kim US Patent 8,634,261, 2014 | 3 | 2014 |
Nonvolatile memory apparatus MS Kim US Patent 8,737,147, 2014 | 2 | 2014 |
Non-Volatile Neuromorphic Computing based on Logic-Compatible Embedded Flash Memory Technology M Kim University of Minnesota, 2020 | 1 | 2020 |
Current break circuit, semiconductor device having the same and operating method thereof MS Kim, KY Lee US Patent 9,991,877, 2018 | 1 | 2018 |
Active control circuit, internal voltage generation circuit, memory apparatus and system using the same MS Kim US Patent App. 15/279,838, 2017 | 1 | 2017 |
Voltage generator, semiconductor memory device having the same, and method of operating semiconductor memory device MS Kim US Patent 9,607,709, 2017 | 1 | 2017 |