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Lim Byeong Min
Lim Byeong Min
在 khu.ac.kr 的电子邮件经过验证
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High-Reliability and Self-Rectifying Alkali Ion Memristor through Bottom Electrode Design and Dopant Incorporation
BM Lim, YM Lee, CS Yoo, M Kim, SJ Kim, S Kim, JJ Yang, HS Lee
ACS nano 18 (8), 6373-6386, 2024
32024
Study on the Sodium-Doped Titania Interface-Type Memristor
M Kim, S Lee, SJ Kim, BM Lim, BS Kang, HS Lee
ACS Applied Materials & Interfaces 16 (13), 16453-16461, 2024
22024
Selector-less crossbar array resistive RAM based on TiO2 fabricated by photochemical metal-organic deposition
YM Lee, BM Lim, HS Lee
Journal of Alloys and Compounds 977, 173312, 2024
22024
Improvement in the Stability of Cation (Si)/Anion (F or N) Codoped ZnO Thin‐Film Transistors Formed via Atomic Layer Deposition
C Hong, M Kim, BM Lim, S Moon, K Kang, I Kymissis, HS Lee, HH Park
International Journal of Energy Research 2023 (1), 3608634, 2023
12023
Photogating-based organic synapse electronics modulated by dielectric
S Kang, M Kim, C Yoo, BM Lim, BC Jang, W Shin, HS Lee, H Yoo
Organic Electronics 129, 107056, 2024
2024
A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within a TiO 2 single layer
MH Park, JH Jeong, W Kim, S Park, BM Lim, HS Lee, SJ Kang
Journal of Materials Chemistry C 12 (19), 6881-6892, 2024
2024
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