| Junctionless multiple-gate transistors for analog applications RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ... IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011 | 280 | 2011 |
| Threshold voltage in junctionless nanowire transistors RD Trevisoli, RT Doria, M de Souza, MA Pavanello Semiconductor Science and Technology 26 (10), 105009, 2011 | 131 | 2011 |
| Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors RD Trevisoli, RT Doria, M de Souza, S Das, I Ferain, MA Pavanello IEEE Transactions on Electron Devices 59 (12), 3510-3518, 2012 | 126 | 2012 |
| Impact of the series resistance in the IV characteristics of junctionless nanowire transistors and its dependence on the temperature RT Doria, RD Trevisoli, M de Souza, MA Pavanello Journal of Integrated Circuits and Systems 7 (2), 121-129, 2012 | 64 | 2012 |
| Cryogenic operation of junctionless nanowire transistors M de Souza, MA Pavanello, RD Trevisoli, RT Doria, JP Colinge IEEE Electron Device Letters 32 (10), 1322-1324, 2011 | 62 | 2011 |
| A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors RD Trevisoli, RT Doria, M de Souza, MA Pavanello Solid-State Electronics 90, 12-17, 2013 | 58 | 2013 |
| Charge-based continuous model for long-channel symmetric double-gate junctionless transistors A Cerdeira, M Estrada, B Iniguez, RD Trevisoli, RT Doria, M De Souza, ... Solid-State Electronics 85, 59-63, 2013 | 47 | 2013 |
| The zero temperature coefficient in junctionless nanowire transistors R Doria Trevisoli, R Trevisoli Doria, M de Souza, S Das, I Ferain, ... Applied Physics Letters 101 (6), 2012 | 39 | 2012 |
| Substrate bias influence on the operation of junctionless nanowire transistors R Trevisoli, RT Doria, M de Souza, MA Pavanello IEEE Transactions on Electron Devices 61 (5), 1575-1582, 2014 | 38 | 2014 |
| Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve AIA Cunha, MA Pavanello, RD Trevisoli, C Galup-Montoro, MC Schneider Solid-State Electronics 56 (1), 89-94, 2011 | 36 | 2011 |
| Analysis of the leakage current in junctionless nanowire transistors R Trevisoli, R Trevisoli Doria, M de Souza, M Antonio Pavanello Applied Physics Letters 103 (20), 2013 | 28 | 2013 |
| Analytical model for the dynamic behavior of triple-gate junctionless nanowire transistors R Trevisoli, RT Doria, M de Souza, S Barraud, M Vinet, MA Pavanello IEEE Transactions on Electron Devices 63 (2), 856-863, 2015 | 26 | 2015 |
| On the improvement of DC analog characteristics of FD SOI transistors by using asymmetric self-cascode configuration M de Souza, D Flandre, RT Doria, R Trevisoli, MA Pavanello Solid-State Electronics 117, 152-160, 2016 | 25 | 2016 |
| Analog operation temperature dependence of nMOS junctionless transistors focusing on harmonic distortion RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ... Journal of Integrated Circuits and Systems 6 (2), 114-121, 2011 | 24 | 2011 |
| Junctionless nanowire transistors operation at temperatures down to 4.2 K R Trevisoli, M De Souza, RT Doria, V Kilchtyska, D Flandre, MA Pavanello Semiconductor Science and Technology 31 (11), 114001, 2016 | 22 | 2016 |
| A new method for series resistance extraction of nanometer MOSFETs R Trevisoli, RT Doria, M de Souza, S Barraud, M Vinet, M Casse, ... IEEE Transactions on Electron Devices 64 (7), 2797-2803, 2017 | 21 | 2017 |
| Impact of the series resistance in the IV characteristics of nMOS junctionless nanowire transistors RT Doria, RD Trevisoli, MA Pavanello ECS Transactions 39 (1), 231, 2011 | 19 | 2011 |
| Analog operation of junctionless transistors at cryogenic temperatures RT Doria, MA Pavanello, RD Trevisoli, M De Souza, CW Lee, I Ferain, ... 2010 IEEE International SOI Conference (SOI), 1-2, 2010 | 19 | 2010 |
| Effective channel length in junctionless nanowire transistors R Trevisoli, RT Doria, M de Souza, MA Pavanello 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2015 | 18 | 2015 |
| Analysis of gate capacitance of n-type junctionless transistors using three-dimensional device simulations G Mariniello, RT Doria, M de Souza, MA Pavanello, RD Trevisoli 2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012 | 17 | 2012 |
Rodrigo T. DoriaCentro Universitário da FEI在 fei.edu.br 的电子邮件经过验证
