| InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Saranovac, D Han, ... IEEE Transactions on Electron Devices 69 (4), 2122-2129, 2022 | 33 | 2022 |
| Type-II GaInAsSb/InP uniform absorber high speed uni-traveling carrier photodiodes AM Arabhavi, R Chaudhary, R Flückiger, D Marti, S Hamzeloui, ... Journal of Lightwave Technology 39 (7), 2171-2176, 2021 | 12 | 2021 |
| InP/GaAsSb DHBT power performance with 30% class-A PAE at 94 GHz W Quan, AM Arabhavi, D Marti, S Hamzeloui, O Ostinelli, CR Bolognesi 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2019 | 9 | 2019 |
| High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz S Hamzeloui, AM Arabhavi, F Ciabattini, R Flückiger, D Marti, M Ebrahimi, ... IEEE Journal of Microwaves 2 (4), 660-668, 2022 | 7 | 2022 |
| InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver CR Bolognesi, AM Arabhavi, R Hersent, S Hamzeloui, F Jorge, X Wen, ... 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022 | 6 | 2022 |
| InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with fMAX = 1.2 THz AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Popovic, D Han, ... 2021 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2021 | 3 | 2021 |
| THz InP/GaAsSb DHBTs with Record fAVG=800 GHz: Characterization to 330 GHz AM Arabhavi, M Deng, F Ciabattini, S Hamzeloui, T Saranovac, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3% Class-A PAE at 94 GHz S Hamzeloui, AM Arabhavi, F Ciabattini, M Ebrahimi, M Müller, O Ostinelli, ... 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2023 | 2 | 2023 |
| Highly-linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of common-base and common-emitter structures S Hamzeloui, F Ciabattini, AM Arabhavi, W Quan, D Marti, M Ebrahimi, ... 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022 | 2 | 2022 |
| 140-190 GHz Broadband Amplifier in 300-nm InP/GaAsSb DHBT Technology W Quan, S Hamzeloui, AM Arabhavi, R Flückiger, O Ostinelli, ... 2020 50th European Microwave Conference (EuMC), 191-194, 2021 | 2 | 2021 |
| Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications R Chaudhary, AM Arabhavi, L Kulmer, S Hamzeloui, M Leich, O Ostinelli, ... Journal of Lightwave Technology, 2023 | 1 | 2023 |
| Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers F Ciabattini, AM Arabhavi, S Hamzeloui, M Ebrahimi, O Ostinelli, ... 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2023 | 1 | 2023 |
| High-power performance of Type-II GaInAsSb/InP uniform absorber uni-traveling carrier photodiodes R Chaudhary, AM Arabhavi, L Kulmer, S Hamzeloui, M Eppenberger, ... Optical Fiber Communication Conference, Th2A. 7, 2023 | 1 | 2023 |
| Demonstration of 300-nm InP/GaInAsSb DHBT MMIC Technology in a 60-160GHz Ultra-Broadband Amplifier Test Vehicle S Hamzeloui, AM Arabhavi, F Ciabattini, D Marti, R Flückiger, M Ebrahimi, ... 2022 17th European Microwave Integrated Circuits Conference (EuMIC), 111-114, 2022 | 1 | 2022 |
| Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs S Hamzeloui, AM Arabhavi, F Ciabattini, G Bonomo, M Ebrahimi, ... IEEE Microwave and Wireless Technology Letters, 2024 | | 2024 |
| Dual Gate HEMT: Compact Cascode for Low-Noise Amplification G Bonomo, F Ciabattini, T Saranovac, F Kostelac, S Hamzeloui, D Marti, ... 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM), 234-236, 2024 | | 2024 |
| 94 GHz Two-Way-Combined Power Amplifiers with 14.2 dBm Peak Output Power in 300-nm InP/GaAsSb DHBT Technology S Hamzeloui, AM Arabhavi, F Ciabattini, M Ebrahimi, G Bonomo, ... 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM), 237-239, 2024 | | 2024 |
| G-Band Load-Pull Characterization of High-Efficiency Emitter-Fin InP/GaAsSb DHBTs F Ciabattini, S Hamzeloui, AM Arabhavi, M Ebrahimi, O Ostinelli, ... 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM), 297-299, 2024 | | 2024 |
| Type-II GaInAsSb/InP Modified Uni-Traveling Carrier Photodiodes Under Zero-Bias Operation R Chaudhary, AM Arabhavi, S Hamzeloui, M Leich, O Ostinelli, ... Optical Fiber Communication Conference, Tu3D. 5, 2024 | | 2024 |
| InP/GaInP Composite-Collector for Improved Breakdown Voltage in the InP/GaAsSb DHBTs AM Arabhavi, S Hamzeloui, W Quan, F Ciabattini, O Ostinelli, ... 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
Prof. Dr. Colombo BolognesiETH Zurich, Chair, Millimeter-Wave Electronics在 mwe.ee.ethz.ch 的电子邮件经过验证
